| Double-gate negative-capacitance MOSFET with PZT gate-stack on ultra thin body SOI: An experimentally calibrated simulation study of device performance A Saeidi, F Jazaeri, I Stolichnov, AM Ionescu IEEE Transactions on Electron Devices 63 (12), 4678-4684, 2016 | 104 | 2016 |
| Negative capacitance as performance booster for tunnel FETs and MOSFETs: an experimental study A Saeidi, F Jazaeri, F Bellando, I Stolichnov, GV Luong, QT Zhao, S Mantl, ... IEEE electron device letters 38 (10), 1485-1488, 2017 | 87 | 2017 |
| Nanowire tunnel FET with simultaneously reduced subthermionic subthreshold swing and off-current due to negative capacitance and voltage pinning effects A Saeidi, T Rosca, E Memisevic, I Stolichnov, M Cavalieri, LE Wernersson, ... Nano letters 20 (5), 3255-3262, 2020 | 73 | 2020 |
| Modeling and simulation of low power ferroelectric non-volatile memory tunnel field effect transistors using silicon-doped hafnium oxide as gate dielectric A Saeidi, A Biswas, AM Ionescu Solid-State Electronics 124, 16-23, 2016 | 65 | 2016 |
| Ferroelectric gating of two-dimensional semiconductors for the integration of steep-slope logic and neuromorphic devices S Kamaei, X Liu, A Saeidi, Y Wei, C Gastaldi, J Brugger, AM Ionescu Nature Electronics 6 (9), 658-668, 2023 | 58 | 2023 |
| Fabrication and modeling of high sensitivity humidity sensors based on doped silicon nanowires H Taghinejad, M Taghinejad, M Abdolahad, A Saeidi, S Mohajerzadeh Sensors and Actuators B: Chemical 176, 413-419, 2013 | 55 | 2013 |
| Effect of hysteretic and non-hysteretic negative capacitance on tunnel FETs DC performance A Saeidi, F Jazaeri, I Stolichnov, GV Luong, QT Zhao, S Mantl, ... Nanotechnology 29 (9), 095202, 2018 | 40 | 2018 |
| Condition for the negative capacitance effect in metal–ferroelectric–insulator–semiconductor devices A Rusu, A Saeidi, AM Ionescu Nanotechnology 27 (11), 115201, 2016 | 39 | 2016 |
| Negative capacitance field effect transistors; capacitance matching and non-hysteretic operation A Saeidi, F Jazaeri, F Bellando, I Stolichnov, CC Enz, AM Ionescu 2017 47th European Solid-State Device Research Conference (ESSDERC), 78-81, 2017 | 38 | 2017 |
| Negative capacitance as universal digital and analog performance booster for complementary MOS transistors A Saeidi, F Jazaeri, I Stolichnov, CC Enz, AM Ionescu Scientific reports 9 (1), 9105, 2019 | 31 | 2019 |
| Subthermionic negative capacitance ion sensitive field-effect transistor F Bellando, CK Dabhi, A Saeidi, C Gastaldi, YS Chauhan, AM Ionescu Applied Physics Letters 116 (17), 2020 | 30 | 2020 |
| Cell membrane electrical charge investigations by silicon nanowires incorporated field effect transistor (SiNWFET) suitable in cancer research M Abdolahad, H Taghinejad, A Saeidi, M Taghinejad, M Janmaleki, ... RSC Advances 4 (15), 7425-7431, 2014 | 26 | 2014 |
| Experimental details of a steep-slope ferroelectric InGaAs tunnel-FET with high-quality PZT and modeling insights in the transient polarization AS Verhulst, A Saeidi, I Stolichnov, A Alian, H Iwai, N Collaert, ... IEEE Transactions on Electron Devices 67 (1), 377-382, 2019 | 25 | 2019 |
| Near Hysteresis-Free Negative Capacitance InGaAs Tunnel FETs with Enhanced Digital and Analog Figures of Merit below A Saeidi, AS Verhulst, I Stolichnov, A Alian, H Iwai, N Collaert, ... 2018 IEEE International Electron Devices Meeting (IEDM), 13.4. 1-13.4. 4, 2018 | 25 | 2018 |
| Gate energy efficiency and negative capacitance in ferroelectric 2D/2D TFET from cryogenic to high temperatures S Kamaei, A Saeidi, C Gastaldi, T Rosca, L Capua, M Cavalieri, ... npj 2D Materials and Applications 5 (1), 76, 2021 | 24 | 2021 |
| Charge-based model for junction FETs F Jazaeri, N Makris, A Saeidi, M Bucher, JM Sallese IEEE Transactions on Electron Devices 65 (7), 2694-2698, 2018 | 20 | 2018 |
| Intrinsic switching in Si-doped HfO2: A study of Curie–Weiss law and its implications for negative capacitance field-effect transistor C Gastaldi, M Cavalieri, A Saeidi, E O'Connor, S Kamaei, T Rosca, ... Applied Physics Letters 118 (19), 2021 | 17 | 2021 |
| An Experimental Study on Mixed-Dimensional 1D-2D van der Waals Single-Walled Carbon Nanotube-WSe2 Hetero-Junction S Kamaei, A Saeidi, F Jazaeri, A Rassekh, N Oliva, M Cavalieri, ... IEEE Electron Device Letters 41 (4), 645-648, 2020 | 16 | 2020 |
| A single-cell correlative nanoelectromechanosensing approach to detect cancerous transformation: monitoring the function of F-actin microfilaments in the modulation of the ion … M Abdolahad, A Saeidi, M Janmaleki, O Mashinchian, M Taghinejad, ... Nanoscale 7 (5), 1879-1887, 2015 | 14 | 2015 |
| Transient Negative Capacitance of Silicon-doped HfO2 in MFMIS and MFIS structures: experimental insights for hysteresis-free steep slope NC FETs C Gastaldi, A Saeidi, M Cavalieri, I Stolichnov, P Muralt, AM Ionescu 2019 IEEE International Electron Devices Meeting (IEDM), 23.5. 1-23.5. 4, 2019 | 12 | 2019 |
A.M. IonescuProfessor of Nanoelectronics在 epfl.ch 的电子邮件经过验证