| Part I: Physical Insight Into Carbon-Doping-Induced Delayed Avalanche Action in GaN Buffer in AlGaN/GaN HEMTs V Joshi, SP Tiwari, M Shrivastava IEEE Transactions on Electron Devices 66 (1), 561-569, 2019 | 70 | 2019 |
| A Comprehensive Computational Modeling Approach for AlGaN/GaN HEMTs V Joshi, A Soni, SP Tiwari, M Shrivastava IEEE Transactions on Nanotechnology 15 (6), 947-955, 2016 | 65 | 2016 |
| Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By AlₓTi₁₋ ₓO Based Gate Stack Engineering SD Gupta, A Soni, V Joshi, J Kumar, R Sengupta, H Khand, B Shankar, ... IEEE Transactions on Electron Devices, 2019 | 40* | 2019 |
| Part II: Proposals to Independently Engineer Donor and Acceptor Trap Concentrations in GaN Buffer for Ultrahigh Breakdown AlGaN/GaN HEMTs V Joshi, SP Tiwari, M Shrivastava IEEE Transactions on Electron Devices 66 (1), 570-577, 2019 | 40 | 2019 |
| On the Channel Hot-Electron’s Interaction With C-Doped GaN Buffer and Resultant Gate Degradation in AlGaN/GaN HEMTs RR Chaudhuri, V Joshi, SD Gupta, M Shrivastava IEEE Transactions on Electron Devices 68 (10), 4869-4876, 2021 | 28 | 2021 |
| Part I: Physical Insights Into Dynamic RON Behavior and a Unique Time-Dependent Critical Stress Voltage in AlGaN/GaN HEMTs SD Gupta, V Joshi, RR Chaudhuri, M Shrivastava IEEE Transactions on Electron Devices 68 (11), 5720-5727, 2021 | 27 | 2021 |
| Interplay Between Surface and Buffer Traps in Governing Breakdown Characteristics of AlGaN/GaN HEMTs—Part II V Joshi, SD Gupta, RR Chaudhuri, M Shrivastava IEEE Transactions on Electron Devices 68 (1), 80-87, 2020 | 21 | 2020 |
| Physical Insights Into the Impact of Surface Traps on Breakdown Characteristics of AlGaN/GaN HEMTs—Part I V Joshi, SD Gupta, RR Chaudhuri, M Shrivastava IEEE Transactions on Electron Devices 68 (1), 72-79, 2020 | 17 | 2020 |
| Novel Surface Passivation Scheme by Using p-Type AlTiO to Mitigate Dynamic ON Resistance Behavior in AlGaN/GaN HEMTs—Part II SD Gupta, V Joshi, RR Chaudhuri, M Shrivastava IEEE Transactions on Electron Devices 68 (11), 5728-5735, 2021 | 10 | 2021 |
| Physical Insights Into Electron Trapping Mechanism in the Carbon-Doped GaN Buffer in AlGaN/GaN HEMTs and Its Impact on Dynamic On-Resistance V Joshi, RR Chaudhuri, SD Gupta, M Shrivastava IEEE Transactions on Electron Devices, 2023 | 9 | 2023 |
| Unique Role of Hot-Electron Induced Self-Heating in Determining Gate-Stack Dependent Dynamic RON of AlGaN/GaN HEMTs Under Semi-on State SD Gupta, V Joshi, RR Chaudhuri, M Shrivastava IEEE Transactions on Electron Devices 69 (12), 6934-6939, 2022 | 8 | 2022 |
| Dynamic Interplay of Surface and Buffer Traps in Determining Drain Current Injection induced Device Instability in OFF-state of AlGaN/GaN HEMTs MA Mir, V Joshi, RR Chaudhuri, MA Munshi, RR Malik, M Shrivastava 2023 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2023 | 6 | 2023 |
| Interplay of device design and carbon-doped GaN buffer parameters in determining dynamic in AlGaN/GaN HEMTs V Joshi, SD Gupta, RR Chaudhuri, M Shrivastava IEEE Transactions on Electron Devices 69 (11), 6035-6042, 2022 | 6 | 2022 |
| Unique Gate Bias Dependence of Dynamic ON-Resistance in MIS-Gated AlGaN/GaN HEMTs and Its Dependence on Gate Control Over the 2-DEG SD Gupta, V Joshi, RR Chaudhuri, M Shrivastava IEEE Transactions on Electron Devices 69 (3), 1608-1611, 2022 | 6 | 2022 |
| Dependence of avalanche breakdown on surface & buffer traps in AlGaN/GaN HEMTs V Joshi, B Shankar, SP Tiwari, M Shrivastava 2017 International Conference on Simulation of Semiconductor Processes and …, 2017 | 5 | 2017 |
| Observations and Physical Insights Into Time-Dependent Hot Electron Current Confinement in AlGaN/GaN HEMTs on C-Doped GaN Buffer RR Chaudhuri, V Joshi, SD Gupta, M Shrivastava IEEE Transactions on Electron Devices 69 (12), 6602-6609, 2022 | 4 | 2022 |
| On the Root Cause of Dynamic ON Resistance Behavior in AlGaN/GaN HEMTs SD Gupta, V Joshi, RR Chaudhuri, A kr Singh, S Guha, M Shrivastava 2020 IEEE International Reliability Physics Symposium (IRPS), 1-4, 2020 | 4 | 2020 |
| Physical Insights Into the Lattice Temperature Dependent Evolution of Hot Electron Distribution in GaN HEMTs on C-Doped GaN-on-Si RR Chaudhuri, V Joshi, RR Malik, M Shrivastava IEEE Transactions on Electron Devices, 2023 | 3 | 2023 |
| Reverse Bias Stress-Induced Turn-On Voltage Shift in Recessed AlGaN/GaN Schottky Barrier Diodes RR Malik, V Joshi, RR Chaudhuri, SD Gupta, M Shrivastava IEEE Transactions on Electron Devices, 2023 | 3 | 2023 |
| Observations regarding deep-level states causing p-type doping in AlTiO gate and positive threshold voltage shift in AlGaN/GaN high electron mobility transistors S Dutta Gupta, V Joshi, R Roy Chaudhuri, M Shrivastava Journal of Applied Physics 130 (1), 2021 | 3 | 2021 |
