| Quantum Hall effect of Weyl fermions in n-type semiconducting tellurene G Qiu, C Niu, Y Wang, M Si, Z Zhang, W Wu, PD Ye Nature Nanotechnology 15 (7), 585-591, 2020 | 109 | 2020 |
| Asymmetric Metal/α-In2Se3/Si Crossbar Ferroelectric Semiconductor Junction M Si, Z Zhang, SC Chang, N Haratipour, D Zheng, J Li, UE Avci, PD Ye ACS nano 15 (3), 5689-5695, 2021 | 70 | 2021 |
| Gate-tunable strong spin-orbit interaction in two-dimensional tellurium probed by weak antilocalization C Niu, G Qiu, Y Wang, Z Zhang, M Si, W Wu, PD Ye Physical Review B 101 (20), 205414, 2020 | 43 | 2020 |
| Ultrathin InGaO thin film transistors by atomic layer deposition J Zhang, D Zheng, Z Zhang, A Charnas, Z Lin, DY Peide IEEE Electron Device Letters 44 (2), 273-276, 2022 | 35 | 2022 |
| extremely thin amorphous indium oxide transistors A Charnas, Z Zhang, Z Lin, D Zheng, J Zhang, M Si, PD Ye Advanced Materials 36 (9), 2304044, 2024 | 29 | 2024 |
| Atomically thin indium-tin-oxide transistors enabled by atomic layer deposition Z Zhang, Y Hu, Z Lin, M Si, A Charnas, K Cho, DY Peide IEEE Transactions on Electron Devices 69 (1), 231-236, 2021 | 29 | 2021 |
| A gate-all-around InO Nanoribbon FET with near 20 mA/m drain current Z Zhang, Z Lin, PY Liao, V Askarpour, H Dou, Z Shang, A Charnas, M Si, ... IEEE Electron Device Letters 43 (11), 1905-1908, 2022 | 24 | 2022 |
| Atomically thin In2O3 field-effect transistors with 1017 current on/off ratio A Charnas, Z Lin, Z Zhang, PD Ye Applied Physics Letters 119 (26), 2021 | 24 | 2021 |
| Nanometer-thick oxide semiconductor transistor with ultra-high drain current Z Lin, M Si, V Askarpour, C Niu, A Charnas, Z Shang, Y Zhang, Y Hu, ... ACS nano 16 (12), 21536-21545, 2022 | 23 | 2022 |
| First demonstration of BEOL-compatible ultrathin atomiclayer-deposited InZnO transistors with GHz operation and record high bias-stress stability D Zheng, A Charnas, J Anderson, H Dou, Z Hu, Z Lin, Z Zhang, J Zhang, ... 2022 International Electron Devices Meeting (IEDM), 4.3. 1-4.3. 4, 2022 | 20 | 2022 |
| Realization of maximum 2 A/mm drain current on top-gate atomic-layer-thin indium oxide transistors by thermal engineering PY Liao, M Si, Z Zhang, Z Lin, DY Peide IEEE Transactions on Electron Devices 69 (1), 147-151, 2021 | 20 | 2021 |
| Back-end-of-line-compatible scaled InGaZnO transistors by atomic layer deposition J Zhang, Z Lin, Z Zhang, K Xu, H Dou, B Yang, A Charnas, D Zheng, ... IEEE Transactions on Electron Devices, 2023 | 19 | 2023 |
| Fluorine-passivated In2O3 thin film transistors with improved electrical performance via low-temperature CF4/N2O plasma J Zhang, A Charnas, Z Lin, D Zheng, Z Zhang, PY Liao, D Zemlyanov, ... Applied Physics Letters 121 (17), 2022 | 19 | 2022 |
| Ultrahigh Bias Stability of ALD In2O3 FETs Enabled by High Temperature O2 Annealing Z Zhang, Z Lin, C Niu, M Si, MA Alam, DY Peide 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023 | 15 | 2023 |
| First Demonstration of BEOL-Compatible Atomic-Layer-Deposited InGaZnO TFTs with 1.5 nm Channel Thickness and 60 nm Channel Length Achieving ON/OFF Ratio Exceeding 10 11, SS of … J Zhang, Z Zhang, Z Lin, K Xu, H Dou, B Yang, X Zhang, H Wang, ... 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023 | 12 | 2023 |
| Transient Thermal and Electrical Co-Optimization of BEOL Top-Gated ALD In2O3 FETs Toward Monolithic 3-D Integration PY Liao, D Zheng, S Alajlouni, Z Zhang, M Si, J Zhang, JY Lin, ... IEEE Transactions on Electron Devices 70 (4), 2052-2058, 2023 | 11 | 2023 |
| Reliability of Atomic-Layer-Deposited Gate-All-Around In2O3 Nano-Ribbon Transistors with Ultra-High Drain Currents Z Zhang, Z Lin, A Charnas, H Dou, Z Shang, J Zhang, M Si, H Wang, ... 2022 International Electron Devices Meeting (IEDM), 30.3. 1-30.3. 4, 2022 | 11 | 2022 |
| Alleviation of Self-Heating Effect in Top-Gated Ultrathin In2O3 FETs Using a Thermal Adhesion Layer PY Liao, K Khot, S Alajlouni, M Snure, J Noh, M Si, Z Zhang, A Shakouri, ... IEEE Transactions on Electron Devices 70 (1), 113-120, 2022 | 8 | 2022 |
| Vertically stacked multilayer atomic-layer-deposited sub-1-nm In2O3 field-effect transistors with back-end-of-line compatibility Z Zhang, Z Lin, M Si, D Zhang, H Dou, Z Chen, A Charnas, H Wang, ... Applied Physics Letters 120 (20), 2022 | 8 | 2022 |
| Transient Thermal and Electrical Co-Optimization of BEOL Top-Gated ALD In₂O₃ FETs on Various Thermally Conductive Substrates Including Diamond PY Liao, S Alajlouni, Z Zhang, Z Lin, M Si, J Noh, TI Feygelson, MJ Tadjer, ... 2022 International Electron Devices Meeting (IEDM), 12.4. 1-12.4. 4, 2022 | 7 | 2022 |
