| High-power AlGaInN flip-chip light-emitting diodes JJ Wierer, DA Steigerwald, MR Krames, JJ O’shea, MJ Ludowise, ... Applied Physics Letters 78 (22), 3379-3381, 2001 | 875 | 2001 |
| III-nitride photonic-crystal light-emitting diodes with high extraction efficiency JJ Wierer Jr, A David, MM Megens Nature Photonics 3 (3), 163-169, 2009 | 845 | 2009 |
| Comparison between blue lasers and light-emitting diodes for future solid-state lighting JJ Wierer Jr., JY Tsao, DS Sizov Lasers and Photonics Reviews 7 (6), 963–993, 2013 | 614 | 2013 |
| InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures JJ Wierer, MR Krames, JE Epler, NF Gardner, MG Craford, JR Wendt, ... Applied Physics Letters 84 (19), 3885-3887, 2004 | 504 | 2004 |
| Toward smart and ultra‐efficient solid‐state lighting JY Tsao, MH Crawford, ME Coltrin, AJ Fischer, DD Koleske, ... Advanced Optical Materials 2 (9), 809-836, 2014 | 413 | 2014 |
| High power LEDs–Technology status and market applications FM Steranka, J Bhat, D Collins, L Cook, MG Craford, R Fletcher, ... physica status solidi (a) 194 (2), 380-388, 2002 | 326 | 2002 |
| Highly reflective ohmic contacts to III-nitride flip-chip LEDs DA Steigerwald, SD Lester, JJ Wierer Jr US Patent 6,573,537, 2003 | 291 | 2003 |
| Four-color laser white illuminant demonstrating high color-rendering quality A Neumann, JJ Wierer, W Davis, Y Ohno, SRJ Brueck, JY Tsao Optics express 19 (104), A982-A990, 2011 | 285 | 2011 |
| Polarization anisotropy in the electroluminescence of m-plane InGaN–GaN multiple-quantum-well light-emitting diodes NF Gardner, JC Kim, JJ Wierer, YC Shen, MR Krames Applied Physics Letters 86 (11), 2005 | 283 | 2005 |
| Photonic crystal light emitting device JJ Wierer, MR Krames, JE Epler US Patent 7,675,084, 2010 | 262* | 2010 |
| High‐efficiency, microscale GaN light‐emitting diodes and their thermal properties on unusual substrates T Kim, YH Jung, J Song, D Kim, Y Li, H Kim, IS Song, JJ Wierer, HA Pao, ... small 8 (11), 1643-1649, 2012 | 247 | 2012 |
| III-nitride light-emitting device with increased light generating capability MR Krames, DA Steigerwald, FA Kish Jr, P Rajkomar, JJ Wierer Jr, ... US Patent 6,486,499, 2002 | 215 | 2002 |
| Photonic crystal light emitting device JJ Wierer Jr, MR Krames, MM Sigalas US Patent 7,012,279, 2006 | 210 | 2006 |
| Semiconductor light emitting devices NF Gardner, JJ Wierer Jr, GO Mueller, MR Krames US Patent 6,847,057, 2005 | 200 | 2005 |
| Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes YC Shen, JJ Wierer, MR Krames, MJ Ludowise, MS Misra, F Ahmed, ... Applied Physics Letters 82 (14), 2221-2223, 2003 | 192 | 2003 |
| LED efficiency using photonic crystal structure JJW M. R. Krames, M. M. Sigalas US Patent App. 2003 0/141,507, 2003 | 188* | 2003 |
| LED including photonic crystal structure US Patent 7,279,718, 0 | 188* | |
| Performance of high‐power AlInGaN light emitting diodes AY Kim, W Götz, DA Steigerwald, JJ Wierer, NF Gardner, J Sun, ... physica status solidi (a) 188 (1), 15-21, 2001 | 169 | 2001 |
| III-Nitride Light-emitting device with increased light generating capability (US 6,521,914) MR Krames, DA Steigerwald, FA Kish Jr, P Rajkomar, JJ Wierer Jr, ... US Patent 6,521,914, 2003 | 159 | 2003 |
| Method of making a III-nitride light-emitting device with increased light generating capability JJ Wierer Jr, MR Krames, DA Steigerwald, FA Kish Jr, P Rajkomar US Patent 6,514,782, 2003 | 150 | 2003 |
Mike KramesArkesso, LLC; ORCID 0000-0001-8545-851X在 arkesso.com 的电子邮件经过验证
