| Structural and Electrical Properties of MoTe2 and MoSe2 Grown by Molecular Beam Epitaxy A Roy, HCP Movva, B Satpati, K Kim, R Dey, A Rai, T Pramanik, ... ACS applied materials & interfaces 8 (11), 7396-7402, 2016 | 247 | 2016 |
| Two-dimensional weak anti-localization in Bi2Te3 thin film grown on Si (111)-(7× 7) surface by molecular beam epitaxy A Roy, S Guchhait, S Sonde, R Dey, T Pramanik, A Rai, HCP Movva, ... Applied Physics Letters 102 (16), 2013 | 111 | 2013 |
| 2 MB array-level demonstration of STT-MRAM process and performance towards L4 cache applications JG Alzate, U Arslan, P Bai, J Brockman, YJ Chen, N Das, K Fischer, ... 2019 IEEE International Electron Devices Meeting (IEDM), 2.4. 1-2.4. 4, 2019 | 110 | 2019 |
| Perpendicular magnetic anisotropy and spin glass-like behavior in molecular beam epitaxy grown chromium telluride thin films A Roy, S Guchhait, R Dey, T Pramanik, CC Hsieh, A Rai, SK Banerjee ACS nano 9 (4), 3772-3779, 2015 | 98 | 2015 |
| Strong spin-orbit coupling and Zeeman spin splitting in angle dependent magnetoresistance of Bi2Te3 R Dey, T Pramanik, A Roy, A Rai, S Guchhait, S Sonde, HCP Movva, ... Applied Physics Letters 104 (22), 2014 | 43 | 2014 |
| Write error rate of spin-transfer-torque random access memory including micromagnetic effects using rare event enhancement U Roy, T Pramanik, LF Register, SK Banerjee IEEE Transactions on Magnetics 52 (10), 1-6, 2016 | 38 | 2016 |
| Angular dependence of magnetization reversal in epitaxial chromium telluride thin films with perpendicular magnetic anisotropy T Pramanik, A Roy, R Dey, A Rai, S Guchhait, HCP Movva, CC Hsieh, ... Journal of Magnetism and Magnetic Materials 437, 72-77, 2017 | 31 | 2017 |
| Micromagnetic study of spin-transfer-torque switching of a ferromagnetic cross towards multi-state spin-transfer-torque based random access memory U Roy, T Pramanik, M Tsoi, LF Register, SK Banerjee Journal of Applied Physics 113 (22), 2013 | 21 | 2013 |
| Atomic layer deposition of cobalt oxide on oxide substrates and low temperature reduction to form ultrathin cobalt metal films Z Zhang, HC Nallan, BM Coffey, TQ Ngo, T Pramanik, SK Banerjee, ... Journal of Vacuum Science & Technology A 37 (1), 2019 | 19 | 2019 |
| Intra-domain periodic defects in monolayer MoS2 A Roy, R Ghosh, A Rai, A Sanne, K Kim, HCP Movva, R Dey, T Pramanik, ... Applied Physics Letters 110 (20), 2017 | 18 | 2017 |
| Structural and magnetic properties of molecular beam epitaxy grown chromium selenide thin films A Roy, R Dey, T Pramanik, A Rai, R Schalip, S Majumder, S Guchhait, ... Physical Review Materials 4 (2), 025001, 2020 | 15 | 2020 |
| Magnetization switching of a metallic nanomagnet via current-induced surface spin-polarization of an underlying topological insulator U Roy, R Dey, T Pramanik, B Ghosh, LF Register, SK Banerjee Journal of Applied Physics 117 (16), 2015 | 15 | 2015 |
| A reliability overview of Intel’s 10+ logic technology R Grover, T Acosta, C AnDyke, E Armagan, C Auth, S Chugh, K Downes, ... 2020 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2020 | 14 | 2020 |
| Localization and interaction effects of epitaxial Bi2Se3 bulk states in two-dimensional limit R Dey, A Roy, T Pramanik, S Guchhait, S Sonde, A Rai, LF Register, ... Journal of Applied Physics 120 (16), 2016 | 14 | 2016 |
| Write error rates of in-plane spin-transfer-torque random access memory calculated from rare-event enhanced micromagnetic simulations T Pramanik, U Roy, P Jadaun, LF Register, SK Banerjee Journal of Magnetism and Magnetic Materials 467, 96-107, 2018 | 12 | 2018 |
| Micromagnetic simulations of spin-wave normal modes and the spin-transfer-torque driven magnetization dynamics of a ferromagnetic cross T Pramanik, U Roy, M Tsoi, LF Register, SK Banerjee Journal of Applied Physics 115 (17), 2014 | 10 | 2014 |
| Proposal of a multistate memory using voltage controlled magnetic anisotropy of a cross-shaped ferromagnet T Pramanik, U Roy, LF Register, SK Banerjee IEEE Transactions on Nanotechnology 14 (5), 883-888, 2015 | 9 | 2015 |
| Embedded emerging memory technologies for neuromorphic computing: Temperature instability and reliability YF Chang, I Karpov, R Hopkins, D Janosky, J Medeiros, B Sherrill, ... 2021 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2021 | 7 | 2021 |
| eNVM MRAM Retention Reliability Modeling in 22FFL FinFET Technology JA O'Donnell, C Connor, T Pramanik, J Hicks, JG Alzate, F Hamzaoglu, ... 2019 IEEE International Reliability Physics Symposium (IRPS), 2019 | 7 | 2019 |
| Write error rate in spin-transfer-torque random access memory including micromagnetic effects U Roy, DL Kencke, T Pramanik, LF Register, SK Banerjee 2015 73rd Annual Device Research Conference (DRC), 147-148, 2015 | 7 | 2015 |
Anupam RoyThe University of Texas at Austin在 austin.utexas.edu 的电子邮件经过验证
