| Write error rate of spin-transfer-torque random access memory including micromagnetic effects using rare event enhancement U Roy, T Pramanik, LF Register, SK Banerjee IEEE Transactions on Magnetics 52 (10), 1-6, 2016 | 38 | 2016 |
| Variable interface dipoles of metallated porphyrin self-assembled monolayers for metal-gate work function tuning in advanced CMOS technologies MA Khaderbad, U Roy, M Yedukondalu, M Rajesh, M Ravikanth, VR Rao IEEE Transactions on Nanotechnology 9 (3), 335-337, 2010 | 25 | 2010 |
| Micromagnetic study of spin-transfer-torque switching of a ferromagnetic cross towards multi-state spin-transfer-torque based random access memory U Roy, T Pramanik, M Tsoi, LF Register, SK Banerjee Journal of Applied Physics 113 (22), 2013 | 21 | 2013 |
| Spin-transfer-torque switching in spin valve structures with perpendicular, canted, and in-plane magnetic anisotropies U Roy, H Seinige, F Ferdousi, J Mantey, M Tsoi, SK Banerjee Journal of Applied Physics 111 (7), 2012 | 17 | 2012 |
| Magnetization switching of a metallic nanomagnet via current-induced surface spin-polarization of an underlying topological insulator U Roy, R Dey, T Pramanik, B Ghosh, LF Register, SK Banerjee Journal of Applied Physics 117 (16), 2015 | 15 | 2015 |
| Write error rates of in-plane spin-transfer-torque random access memory calculated from rare-event enhanced micromagnetic simulations T Pramanik, U Roy, P Jadaun, LF Register, SK Banerjee Journal of Magnetism and Magnetic Materials 467, 96-107, 2018 | 12 | 2018 |
| Micromagnetic simulations of spin-wave normal modes and the spin-transfer-torque driven magnetization dynamics of a ferromagnetic cross T Pramanik, U Roy, M Tsoi, LF Register, SK Banerjee Journal of Applied Physics 115 (17), 2014 | 10 | 2014 |
| Proposal of a multistate memory using voltage controlled magnetic anisotropy of a cross-shaped ferromagnet T Pramanik, U Roy, LF Register, SK Banerjee IEEE Transactions on Nanotechnology 14 (5), 883-888, 2015 | 9 | 2015 |
| Write error rate in spin-transfer-torque random access memory including micromagnetic effects U Roy, DL Kencke, T Pramanik, LF Register, SK Banerjee 2015 73rd Annual Device Research Conference (DRC), 147-148, 2015 | 7 | 2015 |
| Self-heating effects in analog bulk and SOI CMOS circuits U Roy, E Sangiorgi, C Fiegna 2010 10th IEEE International Conference on Solid-State and Integrated …, 2010 | 6 | 2010 |
| Hydroxy-phenyl Zn (II) porphyrin self-assembled monolayer as a diffusion barrier for copper-low k interconnect technology U Roy, MA Khaderbad, M Yedukondalu, MG Walawalkar, M Ravikanth, ... 2009 2nd International Workshop on Electron Devices and Semiconductor …, 2009 | 5 | 2009 |
| Machine learning for statistical modeling: The case of perpendicular spin-transfer-torque random access memory U Roy, T Pramanik, S Roy, A Chatterjee, LF Register, SK Banerjee ACM Transactions on Design Automation of Electronic Systems (TODAES) 26 (3 …, 2021 | 4 | 2021 |
| Circuit prospects of DGFET: Variable gain differential amplifier an a schmitt trigger with adjustable hysteresis S Sen, U Roy, C Kshirsagar, N Bhat, CK Sarkar 2007 IFIP International Conference on Very Large Scale Integration, 280-283, 2007 | 2 | 2007 |
| Tapered junction shield for self-compensation of asymmetry with increasing aspect ratio for tunneling magneto-resistance (TMR) type read head U Roy, Y Wu US Patent 10,319,398, 2019 | 1 | 2019 |
| Towards high-density low-power spin-transfer-torque random access memory U Roy | 1 | 2015 |
| Tapered junction shield for self-compensation of asymmetry with increasing aspect ratio for tunneling magneto-resistance (TMR) type read head U Roy, Y Wu US Patent 10,991,386, 2021 | | 2021 |
| Method of forming tapered junction shield for self-compensation of asymmetry with increasing aspect ratio for tunneling magneto-resistance (TMR) type read head U Roy, Y Wu US Patent 10,984,824, 2021 | | 2021 |
| Tapered junction shield for self-compensation of asymmetry with increasing aspect ratio for tunneling magneto-resistance (TMR) type read head U Roy, Y Wu US Patent 10,706,878, 2020 | | 2020 |
| Machine learning for variability aware statistical device design: The case of perpendicular spin-transfer-torque random access memory U Roy, T Pramanik, S Roy, LF Register, SK Banerjee 2017 75th Annual Device Research Conference (DRC), 1-2, 2017 | | 2017 |
| Magnetization switching of a nanomagnet by spin polarized surface states of a topological insulator U Roy, R Dey, T Pramanik, B Ghosh, LF Register, SK Banerjee Bulletin of the American Physical Society 60, 2015 | | 2015 |
Tanmoy PramanikIIT Roorkee, Intel Corporation, The University of Texas at Austin在 ece.iitr.ac.in 的电子邮件经过验证
