| nBn structure based on InAs∕ GaSb type-II strained layer superlattices JB Rodriguez, E Plis, G Bishop, YD Sharma, H Kim, LR Dawson, ... Applied Physics Letters 91 (4), 2007 | 340 | 2007 |
| MBE growth and characterization of type-II InAs/GaSb superlattices for mid-infrared detection JB Rodriguez, P Christol, L Cerutti, F Chevrier, A Joullié Journal of Crystal Growth 274 (1-2), 6-13, 2005 | 155 | 2005 |
| Mid-IR focal plane array based on type-II InAs∕ GaSb strain layer superlattice detector with nBn design HS Kim, E Plis, JB Rodriguez, GD Bishop, YD Sharma, LR Dawson, ... Applied Physics Letters 92 (18), 2008 | 151 | 2008 |
| Silicon-based photonic integration beyond the telecommunication wavelength range G Roelkens, U Dave, A Gassenq, N Hattasan, C Hu, B Kuyken, F Leo, ... IEEE Journal of Selected Topics in Quantum Electronics 20 (4), 394-404, 2014 | 149 | 2014 |
| Bias dependent dual band response from InAs∕ Ga (In) Sb type II strain layer superlattice detectors A Khoshakhlagh, JB Rodriguez, E Plis, GD Bishop, YD Sharma, HS Kim, ... Applied Physics Letters 91 (26), 2007 | 123 | 2007 |
| Silicon-on-insulator spectrometers with integrated GaInAsSb photodiodes for wide-band spectroscopy from 1510 to 2300 nm E Ryckeboer, A Gassenq, M Muneeb, N Hattasan, S Pathak, L Cerutti, ... Optics express 21 (5), 6101-6108, 2013 | 115 | 2013 |
| Continuous-wave operation above room temperature of GaSb-based laser diodes grown on Si JR Reboul, L Cerutti, JB Rodriguez, P Grech, E Tournié Applied Physics Letters 99 (12), 121113-121113-3, 2011 | 108 | 2011 |
| Quantum cascade lasers grown on silicon H Nguyen-Van, AN Baranov, Z Loghmari, L Cerutti, JB Rodriguez, ... Scientific reports 8 (1), 7206, 2018 | 103 | 2018 |
| Wet etching and chemical polishing of InAs/GaSb superlattice photodiodes R Chaghi, C Cervera, H Aït-Kaci, P Grech, JB Rodriguez, P Christol Semiconductor Science and Technology 24 (6), 065010, 2009 | 101 | 2009 |
| GaSb-Based Laser, Monolithically Grown on Silicon Substrate, Emitting at 1.55 µm at Room Temperature L Cerutti, JB Rodriguez, E Tournie IEEE photonics technology letters 22 (8), 553-555, 2010 | 98 | 2010 |
| Silicon-based heterogeneous photonic integrated circuits for the mid-infrared G Roelkens, U Dave, A Gassenq, N Hattasan, C Hu, B Kuyken, F Leo, ... Optical Materials Express 3 (9), 1523-1536, 2013 | 88 | 2013 |
| Mid-infrared InAs/GaSb strained layer superlattice detectors with nBn design grown on a GaAs substrate E Plis, JB Rodriguez, G Balakrishnan, YD Sharma, HS Kim, T Rotter, ... Semiconductor Science and Technology 25 (8), 085010, 2010 | 88 | 2010 |
| Localized surface plasmon resonances in highly doped semiconductors nanostructures V N'Tsame Guilengui, L Cerutti, JB Rodriguez, E Tournié, T Taliercio Applied Physics Letters 101 (16), 2012 | 81 | 2012 |
| Type II InAs∕ GaSb strain layer superlattice detectors with p-on-n polarity E Plis, JB Rodriguez, HS Kim, G Bishop, YD Sharma, LR Dawson, ... Applied Physics Letters 91 (13), 2007 | 80 | 2007 |
| Unambiguous determination of carrier concentration and mobility for InAs/GaSb superlattice photodiode optimization C Cervera, JB Rodriguez, JP Perez, H Aït-Kaci, R Chaghi, L Konczewicz, ... Journal of Applied Physics 106 (3), 2009 | 79 | 2009 |
| Modeling of electrical characteristics of midwave type II InAs∕ GaSb strain layer superlattice diodes V Gopal, E Plis, JB Rodriguez, CE Jones, L Faraone, S Krishna Journal of Applied Physics 104 (12), 2008 | 79 | 2008 |
| Universal description of III-V/Si epitaxial growth processes I Lucci, S Charbonnier, L Pedesseau, M Vallet, L Cerutti, JB Rodriguez, ... Physical review materials 2 (6), 060401, 2018 | 74 | 2018 |
| Study of evanescently-coupled and grating-assisted GaInAsSb photodiodes integrated on a silicon photonic chip A Gassenq, N Hattasan, L Cerutti, JB Rodriguez, E Tournié, G Roelkens Optics Express 20 (11), 11665-11672, 2012 | 74 | 2012 |
| GaSb-based, 2.2 μm type-I laser fabricated on GaAs substrate operating continuous wave at room temperature JB Rodriguez, L Cerutti, E Tournié Applied Physics Letters 94 (2), 2009 | 73 | 2009 |
| Interface analysis of InAs/GaSb superlattice grown by MBE B Satpati, JB Rodriguez, A Trampert, E Tournié, A Joullié, P Christol Journal of Crystal Growth 301, 889-892, 2007 | 72 | 2007 |
Eric TourniéUniversity of Montpellier在 umontpellier.fr 的电子邮件经过验证
