| The 2020 UV emitter roadmap H Amano, R Collazo, C De Santi, S Einfeldt, M Funato, J Glaab, ... Journal of Physics D: Applied Physics 53 (50), 503001, 2020 | 472 | 2020 |
| Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes CK Li, M Piccardo, LS Lu, S Mayboroda, L Martinelli, J Peretti, JS Speck, ... Physical Review B 95 (14), 144206, 2017 | 189 | 2017 |
| The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior TJ Yang, R Shivaraman, JS Speck, YR Wu Journal of Applied Physics 116 (11), 2014 | 173 | 2014 |
| Impact of gate metal on the performance of p-GaN/AlGaN/GaN high electron mobility transistors F Lee, LY Su, CH Wang, YR Wu, J Huang IEEE Electron Device Letters 36 (3), 232-234, 2015 | 148 | 2015 |
| Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure YR Wu, R Shivaraman, KC Wang, JS Speck Applied Physics Letters 101 (8), 2012 | 148 | 2012 |
| High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy ECH Kyle, SW Kaun, PG Burke, F Wu, YR Wu, JS Speck Journal of applied physics 115 (19), 2014 | 144 | 2014 |
| Electronic and optical properties of InGaN quantum dot based light emitters for solid state lighting YR Wu, YY Lin, HH Huang, J Singh Journal of applied physics 105 (1), 2009 | 143 | 2009 |
| Study on the current spreading effect and light extraction enhancement of vertical GaN/InGaN LEDs CK Li, YR Wu IEEE transactions on electron devices 59 (2), 400-407, 2011 | 140 | 2011 |
| Localization landscape theory of disorder in semiconductors. I. Theory and modeling M Filoche, M Piccardo, YR Wu, CK Li, C Weisbuch, S Mayboroda Physical Review B 95 (14), 144204, 2017 | 122 | 2017 |
| Strain-enhanced photoluminescence from Ge direct transition TH Cheng, KL Peng, CY Ko, CY Chen, HS Lan, YR Wu, CW Liu, ... Applied Physics Letters 96 (21), 2010 | 116 | 2010 |
| Localization landscape theory of disorder in semiconductors. II. Urbach tails of disordered quantum well layers M Piccardo, CK Li, YR Wu, JS Speck, B Bonef, RM Farrell, M Filoche, ... Physical Review B 95 (14), 144205, 2017 | 109 | 2017 |
| Size-dependent strain relaxation and optical characteristics of InGaN/GaN nanorod LEDs YR Wu, C Chiu, CY Chang, P Yu, HC Kuo IEEE Journal of Selected Topics in Quantum Electronics 15 (4), 1226-1233, 2009 | 108 | 2009 |
| Carrier escape mechanism dependence on barrier thickness and temperature in InGaN quantum well solar cells JR Lang, NG Young, RM Farrell, YR Wu, JS Speck Applied Physics Letters 101 (18), 2012 | 104 | 2012 |
| Two dimensional electron gases in polycrystalline MgZnO/ZnO heterostructures grown by rf-sputtering process HA Chin, I Cheng, CI Huang, YR Wu, WS Lu, WL Lee, JZ Chen, KC Chiu, ... Journal of Applied Physics 108 (5), 2010 | 96 | 2010 |
| Real-time observation of ripple structure formation on a diamond surface under focused ion-beam bombardment A Datta, YR Wu, YL Wang Physical Review B 63 (12), 125407, 2001 | 96 | 2001 |
| Giant gauge factor of Van der Waals material based strain sensors W Yan, HR Fuh, Y Lv, KQ Chen, TY Tsai, YR Wu, TH Shieh, KM Hung, J Li, ... Nature communications 12 (1), 2018, 2021 | 93 | 2021 |
| Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH3 molecular beam epitaxy DA Browne, B Mazumder, YR Wu, JS Speck Journal of Applied Physics 117 (18), 2015 | 82 | 2015 |
| Characteristics of large‐scale nanohole arrays for thin‐silicon photovoltaics TG Chen, P Yu, SW Chen, FY Chang, BY Huang, YC Cheng, JC Hsiao, ... Progress in Photovoltaics: Research and Applications 22 (4), 452-461, 2014 | 78 | 2014 |
| Device scaling physics and channel velocities in AIGaN/GaN HFETs: Velocities and effective gate length YR Wu, M Singh, J Singh IEEE transactions on electron devices 53 (4), 588-593, 2006 | 78 | 2006 |
| Study on the effect of size on InGaN red micro-LEDs RH Horng, CX Ye, PW Chen, D Iida, K Ohkawa, YR Wu, DS Wuu Scientific reports 12 (1), 1324, 2022 | 74 | 2022 |
Jim SpeckProfessor of Materials, UCSB在 ucsb.edu 的电子邮件经过验证
