| Gallium nitride-based complementary logic integrated circuits Z Zheng, L Zhang, W Song, S Feng, H Xu, J Sun, S Yang, T Chen, J Wei, ... Nature electronics 4 (8), 595-603, 2021 | 215 | 2021 |
| GaN power integration technology and its future prospects J Wei, Z Zheng, G Tang, H Xu, G Lyu, L Zhang, J Chen, M Hua, S Feng, ... IEEE Transactions on Electron Devices, 2023 | 41 | 2023 |
| RF linearity enhancement of GaN-on-Si HEMTs with a closely coupled double-channel structure W Song, Z Zheng, T Chen, J Wei, L Yuan, KJ Chen IEEE Electron Device Letters 42 (8), 1116-1119, 2021 | 37 | 2021 |
| SiN/in-situ-GaON staggered gate stack on p-GaN for enhanced stability in buried-channel GaN p-FETs L Zhang, Z Zheng, Y Cheng, YH Ng, S Feng, W Song, T Chen, KJ Chen 2021 IEEE International Electron Devices Meeting (IEDM), 5.3. 1-5.3. 4, 2021 | 28 | 2021 |
| Threshold Voltage Instability of Enhancement-Mode GaN Buried p-Channel MOSFETs Z Zheng, L Zhang, W Song, T Chen, S Feng, YH Ng, J Sun, H Xu, S Yang, ... IEEE Electron Device Letters 42 (11), 1584-1587, 2021 | 25 | 2021 |
| Normally-OFF p-GaN gate double-channel HEMT with suppressed hot-electron-induced dynamic on-resistance degradation H Liao, Z Zheng, T Chen, L Zhang, Y Cheng, S Feng, YH Ng, L Chen, ... IEEE Electron Device Letters 43 (9), 1424-1427, 2022 | 21 | 2022 |
| Strain Release in GaN Epitaxy on 4° Off‐Axis 4H‐SiC S Feng, Z Zheng, Y Cheng, YH Ng, W Song, T Chen, L Zhang, K Liu, ... Advanced Materials 34 (23), 2201169, 2022 | 21 | 2022 |
| Physics-based 2-D analytical model for field-plate engineering of AlGaN/GaN power HFET T Chen, Q Zhou, D Wei, C Dong, W Chen, B Zhang IEEE Transactions on Electron Devices 66 (1), 116-125, 2018 | 19 | 2018 |
| Distribution and transport of holes in the p-GaN/AlGaN/GaN heterostructure YH Ng, Z Zheng, L Zhang, R Liu, T Chen, S Feng, Q Shao, KJ Chen Applied Physics Letters 123 (14), 2023 | 13 | 2023 |
| A GaN power integration platform based on engineered bulk Si substrate with eliminated crosstalk between high-side and low-side HEMTs G Lyu, J Wei, W Song, Z Zheng, L Zhang, J Zhang, Y Cheng, S Feng, ... 2021 IEEE International Electron Devices Meeting (IEDM), 5.2. 1-5.2. 4, 2021 | 13 | 2021 |
| Unveiling the parasitic electron channel under the gate of enhancement-mode p-channel GaN field-effect transistors on the p-GaN/AlGaN/GaN platform Z Zheng, T Chen, L Zhang, W Song, KJ Chen Applied Physics Letters 120 (15), 2022 | 10 | 2022 |
| p-GaN gate power HEMT heterostructure as a versatile platform for extremely wide-temperature-range (X-WTR) applications YH Ng, Z Zheng, L Zhang, R Liu, T Chen, S Feng, Q Shao, KJ Chen Applied Physics Letters 124 (4), 2024 | 8 | 2024 |
| HyFET—A GaN/SiC Hybrid Field-Effect Transistor S Feng, Z Zheng, Y Wang, G Lyu, K Liu, Y Cheng, J Chen, T Chen, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | 8 | 2023 |
| Gate Leakage and Reliability of GaN-Channel FET With SiNₓ/GaON Staggered Gate Stack L Zhang, Z Zheng, W Song, T Chen, S Feng, J Chen, M Hua, KJ Chen IEEE Electron Device Letters 43 (11), 1822-1825, 2022 | 8 | 2022 |
| GaN non-volatile memory based on junction barrier-controlled bipolar charge trapping T Chen, Z Zheng, S Feng, L Zhang, W Song, KJ Chen IEEE Electron Device Letters 43 (5), 697-700, 2022 | 8 | 2022 |
| Avalanche capability of 650-V normally-off GaN/SiC cascode power device K Zhong, J Sun, Y Wang, G Lyu, S Feng, T Chen, KJ Chen 2021 33rd International Symposium on Power Semiconductor Devices and ICs …, 2021 | 8 | 2021 |
| Endurance improvement of GaN bipolar charge trapping memory with back gate injection T Chen, Z Zheng, S Feng, L Zhang, KJ Chen IEEE Electron Device Letters, 2023 | 7 | 2023 |
| Electroluminescence and Gate Carrier Dynamics in a Schottky-type p-GaN Gate Double-Channel GaN HEMT S Feng, H Liao, T Chen, J Chen, Y Cheng, M Hua, Z Zheng, KJ Chen IEEE Electron Device Letters, 2023 | 6 | 2023 |
| Impact of Inadequate Mg Activation on Dynamic Threshold Voltage of Schottky-type -GaN Gate HEMTs J Sun, Z Zheng, L Zhang, YH Ng, J Shu, T Chen, KJ Chen 2023 35th International Symposium on Power Semiconductor Devices and ICs …, 2023 | 6 | 2023 |
| GaN on engineered bulk silicon power integration platform with avalanche capability enabled by built-in Si PN junctions G Lyu, S Feng, L Zhang, T Chen, J Wei, KJ Chen IEEE Electron Device Letters 43 (11), 1826-1829, 2022 | 6 | 2022 |
