| A new method for the extraction of MOSFET parameters G Ghibaudo Electronics letters 24, 543-544, 1988 | 975 | 1988 |
| Improved analysis of low frequency noise in field‐effect MOS transistors G Ghibaudo, O Roux, C Nguyen‐Duc, F Balestra, J Brini physica status solidi (a) 124 (2), 571-581, 1991 | 867 | 1991 |
| Review on high-k dielectrics reliability issues G Ribes, J Mitard, M Denais, S Bruyere, F Monsieur, C Parthasarathy, ... IEEE Transactions on Device and materials Reliability 5 (1), 5-19, 2005 | 679 | 2005 |
| Electrical noise and RTS fluctuations in advanced CMOS devices G Ghibaudo, T Boutchacha Microelectronics Reliability 42 (4-5), 573-582, 2002 | 426 | 2002 |
| A stacked SONOS technology, up to 4 levels and 6nm crystalline nanowires, with gate-all-around or independent gates (Φ-Flash), suitable for full 3D integration A Hubert, E Nowak, K Tachi, V Maffini-Alvaro, C Vizioz, C Arvet, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 343 | 2009 |
| Ultimately thin double-gate SOI MOSFETs T Ernst, S Cristoloveanu, G Ghibaudo, T Ouisse, S Horiguchi, Y Ono, ... IEEE transactions on electron devices 50 (3), 830-838, 2003 | 302 | 2003 |
| Direct evaluation of low-field mobility and access resistance in pentacene field-effect transistors Y Xu, T Minari, K Tsukagoshi, JA Chroboczek, G Ghibaudo Journal of Applied Physics 107 (11), 2010 | 234 | 2010 |
| HfO2-Based OxRAM Devices as Synapses for Convolutional Neural Networks D Garbin, E Vianello, O Bichler, Q Rafhay, C Gamrat, G Ghibaudo, ... IEEE Transactions on Electron Devices 62 (8), 2494-2501, 2015 | 233 | 2015 |
| 15nm-diameter 3D stacked nanowires with independent gates operation: ΦFET C Dupré, A Hubert, S Becu, M Jublot, V Maffini-Alvaro, C Vizioz, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 192 | 2008 |
| Improved split CV method for effective mobility extraction in sub-0.1-μm Si MOSFETs K Romanjek, F Andrieu, T Ernst, G Ghibaudo IEEE Electron Device Letters 25 (8), 583-585, 2004 | 188 | 2004 |
| Ionizing radiation induced leakage current on ultra-thin gate oxides A Scarpa, A Paccagnella, F Montera, G Ghibaudo, G Pananakakis, ... IEEE Transactions on Nuclear Science 44 (6), 1818-1825, 1997 | 187 | 1997 |
| Experimental and theoretical investigation of nano-crystal and nitride-trap memory devices B De Salvo, G Ghibaudo, G Pananakakis, P Masson, T Baron, N Buffet, ... IEEE Transactions on Electron Devices 48 (8), 1789-1799, 2001 | 178 | 2001 |
| Device and circuit cryogenic operation for low temperature electronics F Balestra, G Ghibaudo Kluwer Academic Publishers, 2001 | 168 | 2001 |
| Ultra-thin fully-depleted SOI MOSFETs: Special charge properties and coupling effects S Eminente, S Cristoloveanu, R Clerc, A Ohata, G Ghibaudo Solid-State Electronics 51 (2), 239-244, 2007 | 160 | 2007 |
| 3DVLSI with CoolCube process: An alternative path to scaling P Batude, C Fenouillet-Beranger, L Pasini, V Lu, F Deprat, L Brunet, ... 2015 Symposium on VLSI Technology (VLSI Technology), T48-T49, 2015 | 157 | 2015 |
| A thorough investigation of progressive breakdown in ultra-thin oxides. Physical understanding and application for industrial reliability assessment F Monsieur, E Vincent, D Roy, S Bruyere, JC Vildeuil, G Pananakakis, ... 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th …, 2002 | 155 | 2002 |
| Temperature dependence of the Fowler–Nordheim current in metal‐oxide‐degenerate semiconductor structures G Pananakakis, G Ghibaudo, R Kies, C Papadas Journal of Applied Physics 78 (4), 2635-2641, 1995 | 149 | 1995 |
| Unexpected mobility degradation for very short devices: A new challenge for CMOS scaling A Cros, K Romanjek, D Fleury, S Harrison, R Cerutti, P Coronel, ... 2006 International Electron Devices Meeting, 1-4, 2006 | 148 | 2006 |
| 75 nm damascene metal gate and high-k integration for advanced CMOS devices B Guillaumot, X Garros, F Lime, K Oshima, B Tavel, JA Chroboczek, ... Digest. International Electron Devices Meeting,, 355-358, 2002 | 146 | 2002 |
| Dry oxidation of silicon: A new model of growth including relaxation of stress by viscous flow A Fargeix, G Ghibaudo Journal of applied physics 54 (12), 7153-7158, 1983 | 146 | 1983 |
Cristoloveanu, SorinGrenoble INP在 grenoble-inp.fr 的电子邮件经过验证