Multiferroic batio3-cofe2o4 nanostructures H Zheng, J Wang, SE Lofland, Z Ma, L Mohaddes-Ardabili, T Zhao, ... Science 303 (5658), 661-663, 2004 | 2636 | 2004 |
Heteroepitaxy of ZnO on GaN and its implications for fabrication of hybrid optoelectronic devices RD Vispute, V Talyansky, S Choopun, RP Sharma, T Venkatesan, M He, ... Applied Physics Letters 73 (3), 348-350, 1998 | 638 | 1998 |
On the origin of high-temperature ferromagnetism in the low-temperature-processed Mn–Zn–O system DC Kundaliya, SB Ogale, SE Lofland, S Dhar, CJ Metting, SR Shinde, ... Nature materials 3 (10), 709-714, 2004 | 571 | 2004 |
Combinatorial discovery of a lead-free morphotropic phase boundary in a thin-film piezoelectric perovskite S Fujino, M Murakami, V Anbusathaiah, SH Lim, V Nagarajan, CJ Fennie, ... Applied Physics Letters 92 (20), 2008 | 333 | 2008 |
Dielectric properties in heteroepitaxial thin films: Effect of internal stresses and dislocation-type defects CL Canedy, H Li, SP Alpay, L Salamanca-Riba, AL Roytburd, R Ramesh Applied Physics Letters 77 (11), 1695-1697, 2000 | 295 | 2000 |
Inversion of wurtzite GaN (0001) by exposure to magnesium V Ramachandran, RM Feenstra, WL Sarney, L Salamanca-Riba, ... Applied Physics Letters 75 (6), 808-810, 1999 | 281 | 1999 |
Growth of large-scale GaN nanowires and tubes by direct reaction of Ga with M He, I Minus, P Zhou, SN Mohammed, JB Halpern, R Jacobs, WL Sarney, ... Applied Physics Letters 77 (23), 3731-3733, 2000 | 272 | 2000 |
Niobium doped TiO2: Intrinsic transparent metallic anatase versus highly resistive rutile phase SX Zhang, DC Kundaliya, W Yu, S Dhar, SY Young, LG Salamanca-Riba, ... Journal of Applied Physics 102 (1), 2007 | 235 | 2007 |
Thickness dependence of structural and electrical properties in epitaxial lead zirconate titanate films V Nagarajan, IG Jenkins, SP Alpay, H Li, S Aggarwal, L Salamanca-Riba, ... Journal of Applied Physics 86 (1), 595-602, 1999 | 209 | 1999 |
Tuning of Vertical and Lateral Correlations in Self-Organized Quantum Dot Superlattices G Springholz, M Pinczolits, P Mayer, V Holy, G Bauer, HH Kang, ... Physical review letters 84 (20), 4669, 2000 | 201 | 2000 |
Self-assembled single-crystal ferromagnetic iron nanowires formed by decomposition L Mohaddes-Ardabili, H Zheng, SB Ogale, B Hannoyer, W Tian, J Wang, ... Nature materials 3 (8), 533-538, 2004 | 196 | 2004 |
Three-dimensional heteroepitaxy in self-assembled BaTiO3–CoFe2O4 nanostructures H Zheng, J Wang, L Mohaddes-Ardabili, M Wuttig, L Salamanca-Riba, ... Applied Physics Letters 85 (11), 2035-2037, 2004 | 195 | 2004 |
In situ observation of reversible nanomagnetic switching induced by electric fields T Brintlinger, SH Lim, KH Baloch, P Alexander, Y Qi, J Barry, J Melngailis, ... Nano letters 10 (4), 1219-1223, 2010 | 194 | 2010 |
FeS2 Nanoparticles Embedded in Reduced Graphene Oxide toward Robust, High‐Performance Electrocatalysts Y Chen, S Xu, Y Li, RJ Jacob, Y Kuang, B Liu, Y Wang, G Pastel, ... Advanced Energy Materials 7 (19), 1700482, 2017 | 170 | 2017 |
Dependence of dielectric properties on internal stresses in epitaxial barium strontium titanate thin films H Li, AL Roytburd, SP Alpay, TD Tran, L Salamanca-Riba, R Ramesh Applied Physics Letters 78 (16), 2354-2356, 2001 | 165 | 2001 |
Low-resistance Ti/Al/Ti/Au multilayer ohmic contact to n-GaN DF Wang, F Shiwei, C Lu, A Motayed, M Jah, SN Mohammad, KA Jones, ... Journal of Applied Physics 89 (11), 6214-6217, 2001 | 160 | 2001 |
Growth of GaAsN/GaAs, GaInAsN/GaAs and GaInAsN/GaAs quantum wells by low-pressure organometallic chemical vapor deposition R Bhat, C Caneau, L Salamanca-Riba, W Bi, C Tu Journal of crystal growth 195 (1-4), 427-437, 1998 | 152 | 1998 |
Growth of GaN nanowires by direct reaction of Ga with NH3 M He, P Zhou, SN Mohammad, GL Harris, JB Halpern, R Jacobs, ... Journal of Crystal Growth 231 (3), 357-365, 2001 | 149 | 2001 |
Evidence for power-law frequency dependence of intrinsic dielectric response in the A Tselev, CM Brooks, SM Anlage, H Zheng, L Salamanca-Riba, ... Physical Review B—Condensed Matter and Materials Physics 70 (14), 144101, 2004 | 132 | 2004 |
Generation of degradation defects, stacking faults, and misfit dislocations in ZnSe‐based films grown on GaAs LH Kuo, L Salamanca‐Riba, BJ Wu, GM Haugen, JM DePuydt, G Hofler, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1995 | 114 | 1995 |