| Reference current source for current sense amplifier and programmable resistor configured with magnetic tunnel junction cells D Braun, U Klostermann US Patent App. 10/982,026, 2006 | 119 | 2006 |
| Condensed memory cell structure using a FinFET H Park, U Klostermann, R Leuschner US Patent 8,665,629, 2014 | 92 | 2014 |
| Integrated circuit D Andres, R Bruchhaus, U Gruening-Von Schwerin, U Klostermann, ... US Patent 8,063,394, 2011 | 82 | 2011 |
| Magnetic tunnel junctions for MRAM devices SL Brown, A Gupta, U Klostermann, SSP Parkin, W Raberg, M Samant US Patent 7,149,105, 2006 | 66 | 2006 |
| Electric device protection circuit and method for protecting an electric device A Duch, U Klostermann, M Kund US Patent 7,751,163, 2010 | 58 | 2010 |
| Integrated circuits; methods for manufacturing an integrated circuit and memory module U Klostermann US Patent 7,838,861, 2010 | 57 | 2010 |
| MRAM with magnetic via for storage of information and field sensor D Braun, R Leuschner, U Klostermann US Patent 7,092,284, 2006 | 57 | 2006 |
| Field programmable spin-logic based on magnetic tunnelling elements R Richter, H Boeve, L Bär, J Bangert, UK Klostermann, J Wecker, G Reiss Journal of magnetism and magnetic materials 240 (1-3), 127-129, 2002 | 44 | 2002 |
| A perpendicular spin torque switching based MRAM for the 28 nm technology node UK Klostermann, M Angerbauer, U Gruning, F Kreupl, M Ruhrig, ... 2007 IEEE International Electron Devices Meeting, 187-190, 2007 | 37 | 2007 |
| Integrated circuit, method of manufacturing an integrated circuit, and memory module U Klostermann, R Leuschner US Patent 7,855,435, 2010 | 35 | 2010 |
| Magnetic tunnel junction cap structure and method for forming the same SK Kanakasabapathy, DW Abraham, U Klostermann US Patent 7,112,861, 2006 | 35 | 2006 |
| Calibration and verification of a stochastic model for EUV resist W Gao, A Philippou, U Klostermann, J Siebert, V Philipsen, E Hendrickx, ... Extreme Ultraviolet (EUV) Lithography III 8322, 421-430, 2012 | 33 | 2012 |
| Calibration of physical resist models: methods, usability, and predictive power U Klostermann, T Mülders, D Ponomarenco, T Schmöller, ... Journal of Micro/Nanolithography, MEMS and MOEMS 8 (3), 033005-033005-10, 2009 | 32 | 2009 |
| MRAM device structure employing thermally-assisted write operations and thermally-unassisted self-referencing operations R Leuschner, U Klostermann, R Ferrant US Patent 8,310,866, 2012 | 31 | 2012 |
| Integrated circuits; method for manufacturing an integrated circuit; method for decreasing the influence of magnetic fields; memory module R Leuschner, U Klostermann US Patent 7,697,322, 2010 | 29 | 2010 |
| A 0.18/spl mu/m logic-based MRAM technology for high performance nonvolatile memory applications AR Sitaram, DW Abraham, C Alof, D Braun, S Brown, G Costrini, F Findeis, ... 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No …, 2003 | 27 | 2003 |
| Magnetoresistive sensor with tunnel barrier and method F Kreupl, U Klostermann US Patent 7,863,700, 2011 | 22 | 2011 |
| Integrated circuit having a magnetic tunnel junction device and method U Klostermann, F Kreupl US Patent 7,902,616, 2011 | 21 | 2011 |
| Magnetoresistive sensor element for sensing a magnetic field J Zimmer, U Klostermann, C Alof US Patent 7,495,434, 2009 | 21 | 2009 |
| Vortex penetration depth of κ-(ET) 2Cu [N (CN) 2] Br NH Tea, FAB Chaves, U Klostermann, R Giannetta, MB Salamon, ... Physica C: Superconductivity 280 (4), 281-288, 1997 | 21 | 1997 |
