2DEG modulation in double quantum well enhancement mode nitride HEMT A Bag, P Das, R Kumar, P Mukhopadhyay, S Majumdar, S Kabi, D Biswas Physica E: Low-dimensional Systems and Nanostructures 74, 59-64, 2015 | 22 | 2015 |
Graded barrier AlGaN/AlN/GaN heterostructure for improved 2-dimensional electron gas carrier concentration and mobility P Das, NN Halder, R Kumar, SK Jana, S Kabi, B Borisov, A Dabiran, ... Electronic Materials Letters 10 (6), 1087-1092, 2014 | 14 | 2014 |
An empirical approach towards photovoltaic parameter extraction and optimization SP Mallick, DP Dash, S Mallik, R Roshan, S Mahata, P Das, SS Mahato Solar Energy 153, 360-365, 2017 | 12 | 2017 |
Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT P Das, D Biswas AIP Conference Proceedings 1591 (1), 1449-1451, 2014 | 8 | 2014 |
Reverse bias leakage current mechanism of AlGaN/InGaN/GaN heterostructure A Chakraborty, S Ghosh, P Mukhopadhyay, SK Jana, SM Dinara, A Bag, ... Electronic Materials Letters 12, 232-236, 2016 | 7 | 2016 |
Gate Leakage Current Reduction With Advancement of Graded Barrier AlGaN/GaN HEMT P Das, D Biswas Journal of nano- and electronic physics 3 (1), 972, 2011 | 4 | 2011 |
A strategic review of recent progress in metamorphic quantum well based heterostructure electronic devices P Mukhopadhyay, P Das, S Pathak, S Kundu, EY Chang, D Biswas 2008 8th IEEE Conference on Nanotechnology, 503-506, 2008 | 3 | 2008 |
An Alternative X-ray Diffraction Analysis for Comprehensive Determination of Structural Properties in Compositionally Graded Strained AlGaN Epilayers P Das, SK Jana, NN Halder, S Mallik, SS Mahato, AK Panda, PP Chow, ... Electronic Materials Letters 14 (6), 784-792, 2018 | 2 | 2018 |
Solar augmenter P Das, D Biswas US Patent 10,847,976, 2020 | 1 | 2020 |
Source/drain, gate and channel engineering in HEMTs P Das, TR Lenka, SS Mahato, AK Panda Handbook for III-V High Electron Mobility Transistor Technologies, 81-95, 2019 | 1 | 2019 |
Fowler–Nordheim Tunnelling Contribution in AlGaN/GaN on Si (111) Schottky Current A Bag, P Das, S Ghosh, P Mukhopadhyay, SM Dinara, R Kumar, ... IETE Technical Review 33 (1), 7-10, 2016 | 1 | 2016 |
Confined Energy State Based Hypothetical Observations about Device Parameters of AlGaN / GaN HEMT P Das, D Biswas Journal of Nano- and Electronic Physics 7 (1), 01006-1-01006-3, 2015 | 1 | 2015 |
New evolving directions for device performance optimization based integration of compound semiconductor devices on silicon P Mukhopadhyay, P Das, EY Chang, D Biswas Видавництво СумДУ, 2011 | 1 | 2011 |
Reduction of negative differential conductivity effect of AlGaN/GaN HEMTs using gate scaling S Kundu, P Das, S Pathak, P Mukhopadhyay, J Reddy, EY Chang, ... 10th IEEE International Conference on Nanotechnology, 794-797, 2010 | 1 | 2010 |
Reduction of infestation of Meloidogyne incognita by Polygonum hydropiper and Tragia involucrata. NC Sukul, GC De, P Das | 1 | 1974 |
Programmable Optically Variable Resistors: Automating the Design and Measurement of Transistor Biasing Circuits S Ray, A Acharyya, A Sarkar, P Das, R Das, T Halder, A Maji, ... Journal of Circuits, Systems and Computers, 2025 | | 2025 |
Polarization Effects in AlGaN/GaN HEMTs P Das, TR Lenka, SS Mahato, AK Panda Handbook for III-V High Electron Mobility Transistor Technologies, 211-226, 2019 | | 2019 |
Impact of post metal annealing on gate work function engineering for advanced MOS applications SS Kumar, A Prasad, A Sinha, P Raut, P Das, SS Mahato, S Mallik AIP Conference Proceedings 1728 (1), 2016 | | 2016 |
Quantitative investigation into the source of current slump in AlGaN/GaN HEMT on both Si (111) and sapphire: Self-heating and trapping A Bag, P Mukhopadhyay, S Ghosh, P Das, A Chakraborty, SM Dinara, ... AIP Conference Proceedings 1661 (1), 2015 | | 2015 |
Role of Actomyosin dynamics in Virus-Cell Fusion P Das, S Chandra, DP Sarkar, SS Jana MOLECULAR BIOLOGY OF THE CELL 26, 2015 | | 2015 |