| High RF performance AlGaN/GaN HEMT fabricated by recess-arrayed ohmic contact technology Y Lu, X Ma, L Yang, B Hou, M Mi, M Zhang, J Zheng, H Zhang, Y Hao IEEE Electron Device Letters 39 (6), 811-814, 2018 | 59 | 2018 |
| AlN/GaN/InGaN Coupling-Channel HEMTs for Improved gm and Gain Linearity H Lu, B Hou, L Yang, X Niu, Z Si, M Zhang, M Wu, M Mi, Q Zhu, K Cheng, ... IEEE Transactions on Electron Devices 68 (7), 3308-3313, 2021 | 45 | 2021 |
| Millimeter-wave power AlGaN/GaN HEMT using surface plasma treatment of access region M Mi, XH Ma, L Yang, Y Lu, B Hou, J Zhu, M Zhang, HS Zhang, Q Zhu, ... IEEE Transactions on Electron Devices 64 (12), 4875-4881, 2017 | 42 | 2017 |
| Analysis of the breakdown characterization method in GaN-based HEMTs SL Zhao, B Hou, WW Chen, MH Mi, JX Zheng, JC Zhang, XH Ma, Y Hao IEEE Transactions on power electronics 31 (2), 1517-1527, 2015 | 42 | 2015 |
| Influence of fin configuration on the characteristics of AlGaN/GaN fin-HEMTs M Zhang, XH Ma, L Yang, M Mi, B Hou, Y He, S Wu, Y Lu, HS Zhang, ... IEEE Transactions on Electron Devices 65 (5), 1745-1752, 2018 | 39 | 2018 |
| Enhanced gm and fT With High Johnson’s Figure-of-Merit in Thin Barrier AlGaN/GaN HEMTs by TiN-Based Source Contact Ledge L Yang, M Mi, B Hou, H Zhang, J Zhu, Q Zhu, Y Lu, M Zhang, Y He, ... IEEE Electron Device Letters 38 (11), 1563-1566, 2017 | 36 | 2017 |
| Influence of fin-like configuration parameters on the linearity of AlGaN/GaN HEMTs P Wang, X Ma, M Mi, M Zhang, J Zhu, Y Zhou, S Wu, J Liu, L Yang, B Hou, ... IEEE Transactions on Electron Devices 68 (4), 1563-1569, 2021 | 35 | 2021 |
| A millimeter-wave AlGaN/GaN HEMT fabricated with transitional-recessed-gate technology for high-gain and high-linearity applications S Wu, X Ma, L Yang, M Mi, M Zhang, M Wu, Y Lu, H Zhang, C Yi, Y Hao IEEE Electron Device Letters 40 (6), 846-849, 2019 | 34 | 2019 |
| High Channel Conductivity, Breakdown Field Strength, and Low Current Collapse in AlGaN/GaN/Si -Doped AlGaN/GaN:C HEMTs L Yang, M Zhang, B Hou, M Mi, M Wu, Q Zhu, J Zhu, Y Lu, L Chen, X Zhou, ... IEEE Transactions on Electron Devices 66 (3), 1202-1207, 2019 | 33 | 2019 |
| 90 nm gate length enhancement-mode AlGaN/GaN HEMTs with plasma oxidation technology for high-frequency application MH Mi, XH Ma, L Yang, BH Bin-Hou, JJ Zhu, YL He, M Zhang, S Wu, ... Applied Physics Letters 111 (17), 2017 | 31 | 2017 |
| Analysis of low voltage RF power capability on AlGaN/GaN and InAlN/GaN HEMTs for terminal applications Y Zhou, J Zhu, M Mi, M Zhang, P Wang, Y Han, S Wu, J Liu, Q Zhu, ... IEEE Journal of the Electron Devices Society 9, 756-762, 2021 | 30 | 2021 |
| Enhancement-mode AlGaN/GaN nanowire channel high electron mobility transistor with fluorine plasma treatment by ICP Y He, M Mi, C Wang, X Zheng, M Zhang, H Zhang, J Wu, L Yang, P Zhang, ... IEEE Electron Device Letters 38 (10), 1421-1424, 2017 | 30 | 2017 |
| High performance millimeter-wave InAlN/GaN HEMT for low voltage RF applications via regrown Ohmic contact with contact ledge structure Y Zhou, M Mi, M Yang, Y Han, P Wang, Y Chen, J Liu, C Gong, Y Lu, ... Applied Physics Letters 120 (6), 2022 | 29 | 2022 |
| High linearity and high power performance with barrier layer of sandwich structure and Al0. 05GaN back barrier for X-band application B Hou, L Yang, M Mi, M Zhang, C Yi, M Wu, Q Zhu, Y Lu, J Zhu, X Zhou, ... Journal of Physics D: Applied Physics 53 (14), 145102, 2020 | 28 | 2020 |
| Mechanism of improving forward and reverse blocking voltages in AlGaN/GaN HEMTs by using Schottky drain SL Zhao, MH Mi, B Hou, J Luo, Y Wang, Y Dai, JC Zhang, XH Ma, Y Hao Chinese Physics B 23 (10), 107303, 2014 | 28 | 2014 |
| The DC performance and RF characteristics of GaN-based HEMTs improvement using graded AlGaN back barrier and Fe/C Co-doped buffer L Yang, B Hou, F Jia, M Zhang, M Wu, X Niu, H Lu, C Shi, M Mi, Q Zhu, ... IEEE Transactions on Electron Devices 69 (8), 4170-4174, 2022 | 27 | 2022 |
| The influence of Fe doping tail in unintentionally doped GaN layer on DC and RF performance of AlGaN/GaN HEMTs F Jia, X Ma, L Yang, B Hou, M Zhang, Q Zhu, M Wu, M Mi, J Zhu, S Liu, ... IEEE Transactions on Electron Devices 68 (12), 6069-6075, 2021 | 24 | 2021 |
| Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor J Luo, SL Zhao, MH Mi, WW Chen, B Hou, JC Zhang, XH Ma, Y Hao Chinese Physics B 25 (2), 027303, 2015 | 24 | 2015 |
| High-performance enhancement-mode AlGaN/GaN high electron mobility transistors combined with TiN-based source contact ledge and two-step fluorine treatment L Yang, B Hou, M Mi, Q Zhu, M Wu, J Zhu, Y Lu, M Zhang, L Chen, X Zhou, ... IEEE Electron Device Letters 39 (10), 1544-1547, 2018 | 23 | 2018 |
| 0.9-A/mm, 2.6-V Flash-Like Normally-Off Al2O3/AlGaN/GaN MIS-HEMTs Using Charge Trapping Technique B Hou, X Ma, J Zhu, L Yang, W Chen, M Mi, Q Zhu, L Chen, R Zhang, ... IEEE Electron Device Letters 39 (3), 397-400, 2018 | 21 | 2018 |
