| Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction R Yeluri, J Lu, CA Hurni, DA Browne, S Chowdhury, S Keller, JS Speck, ... Applied Physics Letters 106 (18), 2015 | 114 | 2015 |
| Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy DA Browne, EC Young, JR Lang, CA Hurni, JS Speck Journal of Vacuum Science & Technology A 30 (4), 2012 | 112 | 2012 |
| Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH3 molecular beam epitaxy DA Browne, B Mazumder, YR Wu, JS Speck Journal of Applied Physics 117 (18), 2015 | 82 | 2015 |
| Quantum error correction below the surface code threshold R Acharya, L Aghababaie-Beni, I Aleiner, TI Andersen, M Ansmann, ... arXiv preprint arXiv:2408.13687, 2024 | 72 | 2024 |
| pn junctions on Ga-face GaN grown by NH3 molecular beam epitaxy with low ideality factors and low reverse currents CA Hurni, O Bierwagen, JR Lang, BM McSkimming, CS Gallinat, ... Applied Physics Letters 97 (22), 2010 | 57 | 2010 |
| Effect of doping on the intersubband absorption in Si-and Ge-doped GaN/AlN heterostructures A Ajay, CB Lim, DA Browne, J Polaczyński, E Bellet-Amalric, J Bleuse, ... Nanotechnology 28 (40), 405204, 2017 | 31 | 2017 |
| Intersubband absorption in Si‐and Ge‐doped GaN/AlN heterostructures in self‐assembled nanowire and 2D layers A Ajay, CB Lim, DA Browne, J Polaczynski, E Bellet‐Amalric, ... physica status solidi (b) 254 (8), 1600734, 2017 | 28 | 2017 |
| Effect of doping on the far-infrared intersubband transitions in nonpolar m-plane GaN/AlGaN heterostructures CB Lim, A Ajay, C Bougerol, J Lähnemann, F Donatini, J Schörmann, ... Nanotechnology 27 (14), 145201, 2016 | 27 | 2016 |
| Vertical transport through AlGaN barriers in heterostructures grown by ammonia molecular beam epitaxy and metalorganic chemical vapor deposition DA Browne, MN Fireman, B Mazumder, LY Kuritzky, YR Wu, JS Speck Semiconductor Science and Technology 32 (2), 025010, 2017 | 18 | 2017 |
| Quantum error correction below the surface code threshold (2024) R Acharya, L Aghababaie-Beni, I Aleiner, TI Andersen, M Ansmann, ... arXiv preprint arXiv:2408.13687, 0 | 16 | |
| Demonstration of isotype GaN/AlN/GaN heterobarrier diodes by NH3-molecular beam epitaxy MN Fireman, DA Browne, B Mazumder, JS Speck, UK Mishra Applied Physics Letters 106 (20), 2015 | 14 | 2015 |
| Templated epitaxial coatings on magnesium aluminate spinel using the sol-gel method D Browne, H Li, E Giorgi, S Dutta, J Biser, RP Vinci, HM Chan Journal of materials science 44 (5), 1180-1186, 2009 | 14 | 2009 |
| Thermalization and criticality on an analog-digital quantum simulator TI Andersen, N Astrakhantsev, AH Karamlou, J Berndtsson, J Motruk, ... arXiv preprint arXiv:2405.17385, 2024 | 12 | 2024 |
| Near-and mid-infrared intersubband absorption in top-down GaN/AlN nano-and micro-pillars J Lähnemann, DA Browne, A Ajay, M Jeannin, A Vasanelli, JL Thomassin, ... Nanotechnology 30 (5), 054002, 2018 | 7 | 2018 |
| Visualizing dynamics of charges and strings in (2+ 1) d lattice gauge theories (2024) TA Cochran, B Jobst, E Rosenberg, YD Lensky, G Gyawali, N Eassa, ... arXiv preprint arXiv:2409.17142, 0 | 7 | |
| Visualizing dynamics of charges and strings in (2+ 1) D lattice gauge theories TA Cochran, B Jobst, E Rosenberg, YD Lensky, G Gyawali, N Eassa, ... arXiv preprint arXiv:2409.17142, 2024 | 6 | 2024 |
| Isotype InGaN/GaN heterobarrier diodes by ammonia molecular beam epitaxy MN Fireman, DA Browne, UK Mishra, JS Speck Journal of Applied Physics 119 (5), 2016 | 6 | 2016 |
| Thermalization and criticality on an analog-digital quantum simulator (2024) TI Andersen, N Astrakhantsev, A Karamlou, J Berndtsson, J Motruk, ... arXiv preprint arXiv:2405.17385 8, 0 | 5 | |
| Study of percolation transport in the InGaN/AlGaN LEDs with random alloy fluctuation YR Wu, CK Wu, CK Li, DA Browne, JS Speck Conference on Lasers and Electro-Optics/Pacific Rim, 25H2_2, 2015 | 3 | 2015 |
| Low ON-resistance and high current GaN vertical electron transistors with buried p-GaN layers R Yeluri, J Lu, D Browne, CA Hurni, S Chowdhury, S Keller, JS Speck, ... 72nd Device Research Conference, 253-254, 2014 | 3 | 2014 |
Jim SpeckProfessor of Materials, UCSB在 ucsb.edu 的电子邮件经过验证
