受强制性开放获取政策约束的文章 - Hendrik Faber了解详情
无法在其他位置公开访问的文章：6 篇
High‐Efficiency Organic Photovoltaic Cells Based on the Solution‐Processable Hole Transporting Interlayer Copper Thiocyanate (CuSCN) as a Replacement for PEDOT: PSS
N Yaacobi‐Gross, ND Treat, P Pattanasattayavong, H Faber, AK Perumal, ...
Advanced Energy Materials 5 (3), 1401529, 2015
强制性开放获取政策： UK Engineering and Physical Sciences Research Council, European Commission
Indium oxide thin-film transistors processed at low temperature via ultrasonic spray pyrolysis
H Faber, YH Lin, SR Thomas, K Zhao, N Pliatsikas, MA McLachlan, ...
ACS applied materials & interfaces 7 (1), 782-790, 2015
强制性开放获取政策： European Commission
Fully Patterned Low‐Voltage Transparent Metal Oxide Transistors Deposited Solely by Chemical Spray Pyrolysis
H Faber, B Butz, C Dieker, E Spiecker, M Halik
Advanced Functional Materials 23 (22), 2828-2834, 2013
强制性开放获取政策： German Research Foundation
Preparation and soft lithographic printing of nano-sized ITO-dispersions for the manufacture of electrodes for TFTs
N Straue, M Rauscher, S Walther, H Faber, A Roosen
Journal of materials science 44 (22), 6011-6019, 2009
强制性开放获取政策： German Research Foundation
A Multilayered Electron Extracting System for Efficient Perovskite Solar Cells
A Seitkhan, M Neophytou, RK Hallani, J Troughton, N Gasparini, H Faber, ...
Advanced Functional Materials 30 (43), 2004273, 2020
强制性开放获取政策： UK Engineering and Physical Sciences Research Council
Tuning Hole-Injection in Organic-Light Emitting Diodes with Self-Assembled Monolayers
D Gkeka, I Hamilton, T Stavridis, Z Liu, H Faber, D Naphade, ...
ACS Applied Materials & Interfaces 16 (30), 39728-39736, 2024
强制性开放获取政策： Research Council of Lithuania
可在其他位置公开访问的文章：34 篇
Metal oxide semiconductor thin-film transistors for flexible electronics
L Petti, N Münzenrieder, C Vogt, H Faber, L Büthe, G Cantarella, ...
Applied Physics Reviews 3 (2), 2016
强制性开放获取政策： Swiss National Science Foundation, German Research Foundation
Copper (I) Thiocyanate (CuSCN) Hole‐Transport Layers Processed from Aqueous Precursor Solutions and Their Application in Thin‐Film Transistors and Highly Efficient Organic and …
N Wijeyasinghe, A Regoutz, F Eisner, T Du, L Tsetseris, YH Lin, H Faber, ...
Advanced Functional Materials 27 (35), 1701818, 2017
强制性开放获取政策： UK Engineering and Physical Sciences Research Council, European Commission
High‐Efficiency, Solution‐Processed, Multilayer Phosphorescent Organic Light‐Emitting Diodes with a Copper Thiocyanate Hole‐Injection/Hole‐Transport Layer
A Perumal, H Faber, N Yaacobi‐Gross, P Pattanasattayavong, C Burgess, ...
Advanced Materials 27 (1), 93-100, 2015
强制性开放获取政策： UK Engineering and Physical Sciences Research Council, European Commission
Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution
H Faber, S Das, YH Lin, N Pliatsikas, K Zhao, T Kehagias, ...
Science advances 3 (3), e1602640, 2017
强制性开放获取政策： UK Engineering and Physical Sciences Research Council, European Commission
High Electron Mobility Thin‐Film Transistors Based on Solution‐Processed Semiconducting Metal Oxide Heterojunctions and Quasi‐Superlattices
YH Lin, H Faber, JG Labram, E Stratakis, L Sygellou, E Kymakis, ...
Advanced Science 2 (7), 1500058, 2015
强制性开放获取政策： European Commission
18.4% Organic Solar Cells Using a High Ionization Energy Self‐Assembled Monolayer as Hole‐Extraction Interlayer
Y Lin, A Magomedov, Y Firdaus, D Kaltsas, A El‐Labban, H Faber, ...
ChemSusChem 14 (17), 3569-3578, 2021
强制性开放获取政策： Research Council of Lithuania
Low‐temperature solution‐processed memory transistors based on zinc oxide nanoparticles
H Faber, M Burkhardt, A Jedaa, D Kälblein, H Klauk, M Halik
Advanced Materials 21 (30), 3099-3104, 2009
强制性开放获取政策： German Research Foundation
Lithium‐Ion Desolvation Induced by Nitrate Additives Reveals New Insights into High Performance Lithium Batteries
W Wahyudi, V Ladelta, L Tsetseris, MM Alsabban, X Guo, E Yengel, ...
Advanced Functional Materials 31 (23), 2101593, 2021
强制性开放获取政策： 国家自然科学基金委员会
A Novel Alkylated Indacenodithieno [3, 2‐b] thiophene‐Based Polymer for High‐Performance Field‐Effect Transistors
W Zhang, Y Han, X Zhu, Z Fei, Y Feng, ND Treat, H Faber, N Stingelin, ...
Advanced Materials 28 (20), 3922-3927, 2016
强制性开放获取政策： 国家自然科学基金委员会, UK Engineering and Physical Sciences Research Council
Modulation‐Doped In2O3/ZnO Heterojunction Transistors Processed from Solution
D Khim, YH Lin, S Nam, H Faber, K Tetzner, R Li, Q Zhang, J Li, X Zhang, ...
Advanced Materials 29 (19), 1605837, 2017
强制性开放获取政策： US National Science Foundation, US National Institutes of Health, European …
Water stable molecular n-doping produces organic electrochemical transistors with high transconductance and record stability
AF Paterson, A Savva, S Wustoni, L Tsetseris, BD Paulsen, H Faber, ...
Nature communications 11 (1), 3004, 2020
强制性开放获取政策： US National Science Foundation, US Department of Energy
Efficient organic solar cells using copper (I) iodide (CuI) hole transport layers
Y Peng, N Yaacobi-Gross, AK Perumal, HA Faber, G Vourlias, ...
Applied Physics Letters 106 (24), 2015
强制性开放获取政策： 国家自然科学基金委员会
High electron mobility thin-film transistors based on Ga2O3 grown by atmospheric ultrasonic spray pyrolysis at low temperatures
SR Thomas, G Adamopoulos, YH Lin, H Faber, L Sygellou, E Stratakis, ...
Applied Physics Letters 105 (9), 2014
强制性开放获取政策： European Commission
Addition of the Lewis Acid Zn(C6F5)2 Enables Organic Transistors with a Maximum Hole Mobility in Excess of 20 cm2 V−1 s−1
AF Paterson, L Tsetseris, R Li, A Basu, H Faber, AH Emwas, J Panidi, ...
Advanced Materials 31 (27), 1900871, 2019
强制性开放获取政策： US Department of Energy, UK Engineering and Physical Sciences Research Council
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