| Steep-slope hysteresis-free negative capacitance MoS2 transistors M Si, CJ Su, C Jiang, NJ Conrad, H Zhou, KD Maize, G Qiu, CT Wu, ... Nature Nanotechnology 13 (1), 24-28, 2017 | 551 | 2017 |
| A ferroelectric semiconductor field-effect transistor M Si, AK Saha, S Gao, G Qiu, J Qin, Y Duan, J Jian, C Niu, H Wang, W Wu, ... Nature Electronics 2 (12), 580-586, 2019 | 503 | 2019 |
| Statistical Study of Deep Sub-Micron Dual-Gated Field-Effect Transistors on Monolayer CVD Molybdenum Disulfide Films H Liu, M Si, S Najmaei, AT Neal, Y Du, PM Ajayan, J Lou, PD Ye Nano Letters 13 (6), 2640-2646, 2013 | 402* | 2013 |
| Ultra-wide bandgap semiconductor Ga2O3 power diodes J Zhang, P Dong, K Dang, Y Zhang, Q Yan, H Xiang, J Su, Z Liu, M Si, ... Nature communications 13 (1), 3900, 2022 | 393 | 2022 |
| One-dimensional van der Waals material tellurium: Raman spectroscopy under strain and magneto-transport Y Du, G Qiu, Y Wang, M Si, X Xu, W Wu, PD Ye Nano letters 17 (6), 3965-3973, 2017 | 362 | 2017 |
| Ferroelectric Field-Effect Transistors Based on MoS2 and CuInP2S6 Two-Dimensional Van der Waals Heterostructure M Si, PY Liao, G Qiu, Y Duan, PD Ye ACS nano 12 (7), 6700–6705, 2018 | 338 | 2018 |
| High-Performance Depletion/Enhancement-ode -Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm H Zhou, M Si, S Alghamdi, G Qiu, L Yang, DY Peide IEEE Electron Device Letters 38 (1), 103-106, 2016 | 323 | 2016 |
| Molecular Doping of Multilayer MoS₂ Field-Effect Transistors: Reduction in Sheet and Contact Resistances Y Du, H Liu, AT Neal, M Si, PD Ye IEEE Electron Device Letters 34 (10), 1328 - 1330, 2013 | 307 | 2013 |
| Switching mechanism in single-layer molybdenum disulfide transistors: an insight into current flow across Schottky barriers H Liu, M Si, Y Deng, AT Neal, Y Du, S Najmaei, PM Ajayan, J Lou, PD Ye ACS Nano 8 (1), 1031-1038, 2014 | 291 | 2014 |
| A critical review of recent progress on negative capacitance field-effect transistors MA Alam, M Si, PD Ye Applied Physics Letters 114 (9), 2019 | 218 | 2019 |
| The Effect of Dielectric Capping on Few-Layer Phosphorene Transistors: Tuning the Schottky Barrier Heights H Liu, AT Neal, M Si, Y Du, PD Ye IEEE Electron Device Letters 35 (7), 795 - 797, 2014 | 202 | 2014 |
| Raman response and transport properties of tellurium atomic chains encapsulated in nanotubes JK Qin, PY Liao, M Si, S Gao, G Qiu, J Jian, Q Wang, SQ Zhang, S Huang, ... Nature electronics 3 (3), 141-147, 2020 | 185 | 2020 |
| Scaled indium oxide transistors fabricated using atomic layer deposition M Si, Z Lin, Z Chen, X Sun, H Wang, PD Ye Nature Electronics 5 (3), 164-170, 2022 | 182 | 2022 |
| Why In2O3 Can Make 0.7 nm Atomic Layer Thin Transistors M Si, Y Hu, Z Lin, X Sun, A Charnas, D Zheng, X Lyu, H Wang, K Cho, ... Nano Letters 21 (1), 500-506, 2020 | 163 | 2020 |
| Al2O3/ -Ga2O3(-201) Interface Improvement Through Piranha Pretreatment and Postdeposition Annealing H Zhou, S Alghmadi, M Si, G Qiu, DY Peide IEEE Electron Device Letters 37 (11), 1411-1414, 2016 | 151 | 2016 |
| Steep-Slope WSe2 Negative Capacitance Field-Effect Transistor M Si, C Jiang, W Chung, Y Du, MA Alam, PD Ye Nano letters 18 (8), 3682–3687, 2018 | 130 | 2018 |
| Performance Potential and Limit of MoS2 Transistors X Li, L Yang, M Si, S Li, M Huang, P Ye, Y Wu Advanced Materials 27 (9), 1547-1552, 2015 | 115 | 2015 |
| Quantum Hall effect of Weyl fermions in n-type semiconducting tellurene G Qiu, C Niu, Y Wang, M Si, Z Zhang, W Wu, PD Ye Nature Nanotechnology 15 (7), 585-591, 2020 | 109 | 2020 |
| Ultrafast measurements of polarization switching dynamics on ferroelectric and anti-ferroelectric hafnium zirconium oxide M Si, X Lyu, PR Shrestha, X Sun, H Wang, KP Cheung, PD Ye Applied Physics Letters 115 (7), 2019 | 109 | 2019 |
| Ferroelectric Polarization Switching of Hafnium Zirconium Oxide in Ferroelectric/Dielectric Stack M Si, X Lyu, PD Ye ACS Appl. Electron. Mater. 1 (5), 745-751, 2019 | 107 | 2019 |
Peide YeRichard J. and Mary Jo Schwartz Professor of Electrical and Computer Engineering, Purdue University在 purdue.edu 的电子邮件经过验证