受强制性开放获取政策约束的文章 - Mengwei Si（司梦维）了解详情
无法在其他位置公开访问的文章：28 篇
Enhancement-Mode Atomic-Layer-Deposited In2O3 Transistors With Maximum Drain Current of 2.2 A/mm at Drain Voltage of 0.7 V by Low-Temperature …
M Si, A Charnas, Z Lin, DY Peide
IEEE Transactions on Electron Devices 68 (3), 1075-1080, 2021
强制性开放获取政策： US Department of Defense
High-performance atomic-layer-deposited indium oxide 3-D transistors and integrated circuits for monolithic 3-D integration
M Si, Z Lin, Z Chen, DY Peide
IEEE Transactions on Electron Devices 68 (12), 6605-6609, 2021
强制性开放获取政策： US Department of Defense
BEOL Compatible Indium-Tin-Oxide Transistors: Switching of Ultrahigh-Density 2-D Electron Gas Over 0.8 × 1014/cm2 at Oxide/Oxide Interface by the Change of …
M Si, A Murray, Z Lin, J Andler, J Li, J Noh, S Alajlouni, C Niu, X Lyu, ...
IEEE Transactions on Electron Devices 68 (7), 3195-3199, 2021
强制性开放获取政策： US Department of Defense
Atomically thin indium-tin-oxide transistors enabled by atomic layer deposition
Z Zhang, Y Hu, Z Lin, M Si, A Charnas, K Cho, DY Peide
IEEE Transactions on Electron Devices 69 (1), 231-236, 2021
强制性开放获取政策： US Department of Defense
Quantitative characterization of interface traps in ferroelectric/dielectric stack using conductance method
Y Qu, J Li, M Si, X Lyu, DY Peide
IEEE Transactions on Electron Devices 67 (12), 5315-5321, 2020
强制性开放获取政策： US Department of Defense
Ultraviolet Light-Based Current–Voltage Method for Simultaneous Extraction of Donor- and Acceptor-Like Interface Traps in -Ga2O3 FETs
H Bae, J Noh, S Alghamdi, M Si, DY Peide
IEEE Electron Device Letters 39 (11), 1708-1711, 2018
强制性开放获取政策： US Department of Defense
Quantitative characterization of ferroelectric/dielectric interface traps by pulse measurements
J Li, M Si, Y Qu, X Lyu, DY Peide
IEEE Transactions on Electron Devices 68 (3), 1214-1220, 2021
强制性开放获取政策： US Department of Defense
Improved Stability With Atomic-Layer-Deposited Encapsulation on Atomic-Layer In2O3 Transistors by Reliability Characterization
A Charnas, M Si, Z Lin, DY Peide
IEEE Transactions on Electron Devices 69 (10), 5549-5555, 2022
强制性开放获取政策： US Department of Defense
Realization of maximum 2 A/mm drain current on top-gate atomic-layer-thin indium oxide transistors by thermal engineering
PY Liao, M Si, Z Zhang, Z Lin, DY Peide
IEEE Transactions on Electron Devices 69 (1), 147-151, 2021
强制性开放获取政策： US Department of Defense
Antiferroelectric Phase Evolution in HfxZr1-xO2 Thin Film Toward High Endurance of Non-Volatile Memory Devices
D Chen, S Zhong, Y Dong, T Cui, J Liu, M Si, X Li
IEEE Electron Device Letters 43 (12), 2065-2068, 2022
强制性开放获取政策： 国家自然科学基金委员会
The Impact of Substrates on the Performance of Top-Gate β-Ga2O3 Field-Effect Transistors: Record High Drain Current of 980 mA/mm on Diamond
J Noh, M Si, H Zhou, MJ Tadjer, DY Peide
2018 76th Device Research Conference (DRC), 1-2, 2018
强制性开放获取政策： US Department of Defense
Black phosphorus field-effect transistor with record drain current exceeding 1 A/mm
M Si, L Yang, Y Du, DY Peide
2017 75th Annual Device Research Conference (DRC), 1-2, 2017
强制性开放获取政策： US National Science Foundation, US Department of Defense
Enhancement of Thermal Transfer From β-Ga2O3 Nano-Membrane Field-Effect Transistors to High Thermal Conductivity Substrate by Inserting an Interlayer
J Noh, PR Chowdhury, M Segovia, S Alajlouni, M Si, AR Charnas, ...
IEEE Transactions on Electron Devices 69 (3), 1186-1190, 2022
强制性开放获取政策： US Department of Defense
Single pulse charge pumping measurements on GaN MOS-HEMTs: Fast and reliable extraction of interface traps density
S Alghamdi, M Si, H Bae, H Zhou, DY Peide
IEEE Transactions on Electron Devices 67 (2), 444-448, 2020
强制性开放获取政策： US Department of Defense
Transient Thermal and Electrical Co-Optimization of BEOL Top-Gated ALD In2O3 FETs Toward Monolithic 3-D Integration
PY Liao, D Zheng, S Alajlouni, Z Zhang, M Si, J Zhang, JY Lin, ...
IEEE Transactions on Electron Devices 70 (4), 2052-2058, 2023
强制性开放获取政策： US Department of Defense
A low-leakage zinc oxide transistor by atomic layer deposition
Z Lin, Z Wang, J Zhao, X Li, M Si
IEEE Electron Device Letters 44 (3), 536-539, 2023
强制性开放获取政策： 国家自然科学基金委员会
The impact of parasitic capacitance on the memory characteristics of 2T0C DRAM and new writing strategy
L Zheng, Z Wang, Z Lin, M Si
IEEE Electron Device Letters 44 (8), 1284-1287, 2023
强制性开放获取政策： 国家自然科学基金委员会
Mobility fluctuation-induced low-frequency noise in ultrascaled Ge nanowire nMOSFETs with near-ballistic transport
W Wu, H Wu, W Sun, M Si, N Conrad, Y Zhao, DY Peide
IEEE Transactions on Electron Devices 65 (6), 2573-2577, 2018
强制性开放获取政策： 国家自然科学基金委员会
High-Performance In₂O₃-Based 1T1R FET for BEOL Memory Application
Z Lin, M Si, X Lyu, P Ye
IEEE Transactions on Electron Devices 68 (8), 3775-3779, 2021
强制性开放获取政策： US Department of Defense
Surface Accumulation Induced Negative Schottky Barrier and Ultralow Contact Resistance in Atomic-Layer-Deposited InO Thin-Film Transistors
C Niu, Z Lin, V Askarpour, Z Zhang, P Tan, M Si, Z Shang, Y Zhang, ...
IEEE Transactions on Electron Devices, 2024
强制性开放获取政策： US Department of Defense, Natural Sciences and Engineering Research Council …
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