| A new partial SOI-LDMOSFET with a modified buried oxide layer for improving self-heating and breakdown voltage SEJ Mahabadi, AA Orouji, P Keshavarzi, HA Moghadam Semiconductor Science and Technology 26 (9), 095005, 2011 | 55 | 2011 |
| A novel partial SOI LDMOSFET with periodic buried oxide for breakdown voltage and self heating effect enhancement SEJ Mahabadi, S Rajabi, J Loiacono Superlattices and Microstructures 85, 872-879, 2015 | 49 | 2015 |
| Calculation of the impulse response and phase noise of a high-current photodetector using the drift-diffusion equations SEJ Mahabadi, S Wang, TF Carruthers, CR Menyuk, FJ Quinlan, ... Optics Express 27 (3), 3717-3730, 2019 | 38 | 2019 |
| A novel partial SOI LDMOSFET with a trench and buried P layer for breakdown voltage improvement AA Orouji, SEJ Mahabadi, P Keshavarzi Superlattices and Microstructures 50 (5), 449-460, 2011 | 34 | 2011 |
| Comprehensive study of a 4H–SiC MES–MOSFET SEJ Mahabadi, HA Moghadam Physica E: Low-dimensional Systems and Nanostructures 74, 25-29, 2015 | 32 | 2015 |
| Upper drift region double step partial SOI LDMOSFET: A novel device for enhancing breakdown voltage and output characteristics SEJ Mahabadi Superlattices and Microstructures 89, 345-354, 2016 | 28 | 2016 |
| A novel step buried oxide partial SOI LDMOSFET with triple drift layer SEJ Mahabadi, AA Orouji, P Keshavarzi, S Rajabi, HA Moghadam, ... 2011 International Conference on Signal Processing, Communication, Computing …, 2011 | 16 | 2011 |
| Combination of a 4H-SiC MESFET with a 4H-SiC MOSFET to realize a high voltage MOSFET HA Moghadam, SEJ Mahabadi, S Rajabi 2011 International Conference on Signal Processing, Communication, Computing …, 2011 | 13 | 2011 |
| Obtaining more energetic modelocked pulses from a SESAM-based fiber laser S Wang, C Tu, SE Jamali Mahabadi, S Droste, LC Sinclair, I Coddington, ... Optics Express 28 (14), 20345-20361, 2020 | 12 | 2020 |
| A robust drift-diffusion equations solver enabling accurate simulation of photodetectors E Simsek, SEJ Mahabadi, IM Anjum, CR Menyuk PIERS 2021, 21-25, 2021 | 11 | 2021 |
| A novel double field-plate power high electron mobility transistor based on AlGaN/GaN for performance improvement S Rajabi, AA Orouji, HA Moghadam, SEJ Mahabadi, M Fathipour 2011 International Conference on Signal Processing, Communication, Computing …, 2011 | 11 | 2011 |
| A novel power High Electron Mobility Transistor with partial stepped recess in the drain access region for performance improvement S Rajabi, AA Orouji, HA Moghadam, SEJ Mahabadi, M Fathipour 2011 International Conference on Signal Processing, Communication, Computing …, 2011 | 10 | 2011 |
| Use of evolutionary optimization algorithms for the design and analysis of low bias, low phase noise photodetectors IM Anjum, E Simsek, SEJ Mahabadi, TF Carruthers, CR Menyuk, ... Journal of Lightwave Technology, 2023 | 8 | 2023 |
| Employing reduced surface field technique by a P‐type region in 4H‐SiC metal semiconductor field effect transistors for increasing breakdown voltage HA Moghadam, AA Orouji, SE Jamali Mahabadi International Journal of Numerical Modelling: Electronic Networks, Devices …, 2013 | 8 | 2013 |
| A novel AlGaN/GaN/AlGaN double-heterojunction high electron mobility transistor for performance improvement S Rajabi, AA Orouji, HA Moghadam, SEJ Mahabadi, M Fathipour 2011 International Conference on Signal Processing, Communication, Computing …, 2011 | 7 | 2011 |
| A new method for improving breakdown voltage in PSOI MOSFETs using variable drift region doping concentration SEJ Mahabadi, AA Orouji, HA Moghadam, P Keshavarzi 2011 IEEE International Conference on Computer Science and Automation …, 2011 | 6 | 2011 |
| Design and analysis of low bias, low phase noise photodetectors for frequency comb applications using particle swarm optimization IM Anjum, E Simsek, SEJ Mahabadi, TF Carruthers, CR Menyuk 2022 IEEE International Topical Meeting on Microwave Photonics (MWP), 1-4, 2022 | 5 | 2022 |
| Impact of nonlinearity in an MUTC photodetector on an RF-modulated frequency comb SEJ Mahabadi, TF Carruthers, CR Menyuk, MN Hutchinson, JD McKinney, ... 2019 IEEE Photonics Conference (IPC), 1-2, 2019 | 5 | 2019 |
| Employing reduced surface field technique by a P-type region in 4H–SiC MESFETs for increasing breakdown voltage HA Moghadam, AA Orouji, SEJ Mahabadi Int. J. Numer. Model. Electon. Netw. Devices Fields 26 (2), 103-111, 2013 | 5 | 2013 |
| 4H-SiC SOI-MESFET with a step in buried oxide for improving electrical performance HA Moghadam, AA Orouji, SEJ Mahabadi 2011 IEEE International Conference on Computer Science and Automation …, 2011 | 5 | 2011 |
Curtis MenyukComputer Science and Electrical Engineering Department, University of Maryland Baltimore County在 umbc.edu 的电子邮件经过验证
