| Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers SA Al Muyeed, W Sun, X Wei, R Song, DD Koleske, N Tansu, JJ Wierer Aip Advances 7 (10), 2017 | 41 | 2017 |
| Integrating AlInN interlayers into InGaN/GaN multiple quantum wells for enhanced green emission W Sun, SA Al Muyeed, R Song, JJ Wierer, N Tansu Applied Physics Letters 112 (20), 2018 | 32 | 2018 |
| Recombination rates in green-yellow InGaN-based multiple quantum wells with AlGaN interlayers SA Al Muyeed, W Sun, MR Peart, RM Lentz, X Wei, D Borovac, R Song, ... Journal of Applied Physics 126 (21), 2019 | 23 | 2019 |
| Recombination Rate Analysis of InGaN-Based Red-Emitting Light-Emitting Diodes H Xue, SA Al Muyeed, E Palmese, D Rogers, R Song, N Tansu, JJ Wierer IEEE Journal of Quantum Electronics 59 (2), 1-9, 2023 | 11 | 2023 |
| Room temperature luminescence of passivated InGaN quantum dots formed by quantum-sized-controlled photoelectrochemical etching X Wei, SA Al Muyeed, MR Peart, W Sun, N Tansu, JJ Wierer Applied Physics Letters 113 (12), 2018 | 11 | 2018 |
| Near-Infrared Electroluminescence of AlGaN Capped InGaN Quantum Dots Formed by Controlled Growth on Photoelectrochemical Etched Quantum Dot Templates X Wei, SA Al Muyeed, H Xue, E Palmese, R Song, N Tansu, JJ Wierer Jr Photonics Research 10 (1), 33-40, 2021 | 4 | 2021 |
| Controlled growth of InGaN quantum dots on photoelectrochemically etched InGaN quantum dot templates SA Al Muyeed, X Wei, D Borovac, R Song, N Tansu, JJ Wierer Jr Journal of Crystal Growth 540, 125652, 2020 | 3 | 2020 |
| Recombination Rates of InxGa1−xN/AlyGa1−yN/GaN Multiple Quantum Wells Emitting From 640 to 565 nm SA Al Muyeed, D Borovac, H Xue, X Wei, R Song, N Tansu, JJ Wierer IEEE Journal of Quantum Electronics 57 (6), 1-7, 2021 | 2 | 2021 |
| Anisotropic Etching of InGaN Thin Films with Photoelectrochemical Etching to Form Quantum Dots X Wei, SA Al Muyeed, H Xue, JJ Wierer Jr Materials 16 (5), 1890, 2023 | | 2023 |
| Self-assembled growth of size-controlled InGaN quantum dots for LEDs JJ Wierer, SA Al Muyeed, X Wei, D Borovac, H Xue, R Song, N Tansu Light-Emitting Devices, Materials, and Applications XXV 11706, 1170606, 2021 | | 2021 |
| III-Nitride Interlayer Active Region Light Emitters in the Visible Range SA Al Muyeed Lehigh University, 2021 | | 2021 |
| Controlled Synthesis of InGaN Quantum Dots for Efficient Light Emitters X Wei, SA Al Muyeed, M Peart, N Tansu, JJ Wierer 2018 IEEE Photonics Conference (IPC), 1-2, 2018 | | 2018 |
| Improvement in the Radiative Efficiency of InGaN-Based Multiple Quantum Wells using AlGaN Interlayers SA Al Muyeed, W Sun, X Wei, R Song, D Koleske, N Tansu, JJ Wierer 2018 IEEE Photonics Conference (IPC), 1-2, 2018 | | 2018 |
| Absorption properties of Silver-Silica-Gold Nanomatryushka particle and its optimization for photo-thermal cancer therapy FH Shashi, I Misbah, SA Al Muyeed 2016 5th International Conference on Informatics, Electronics and Vision …, 2016 | | 2016 |
| Study of the current on/off ratio of an Indium Arsenide circular nanowire transistor using non-equilibrium green's function approach SA Al Muyeed, I Misbah 2016 5th International Conference on Informatics, Electronics and Vision …, 2016 | | 2016 |
Jonathan J. Wierer, Jr.North Carolina State University, Department of Electrical and Computer Engineering在 ncsu.edu 的电子邮件经过验证