| A 2-d passive-dynamic-running biped with elastic elements D Owaki, M Koyama, S Yamaguchi, S Kubo, A Ishiguro IEEE Transactions on Robotics 27 (1), 156-162, 2011 | 53 | 2011 |
| A two-dimensional passive dynamic running biped with knees D Owaki, M Koyama, S Yamaguchi, S Kubo, A Ishiguro 2010 IEEE International Conference on Robotics and Automation, 5237-5242, 2010 | 43 | 2010 |
| Improved electrical performance of solution-processed zinc oxide-based thin-film transistors with bilayer structures K Oura, H Wada, M Koyama, T Maemoto, S Sasa Journal of Information Display 23 (1), 105-113, 2022 | 11 | 2022 |
| Semiconductor device and method of producing the same M Koyama US Patent App. 15/299,056, 2017 | 9 | 2017 |
| Electron transport in InAs/AlGaSb ballistic rectifiers T Maemoto, M Koyama, M Furukawa, H Takahashi, S Sasa, M Inoue Journal of Physics: Conference Series 38 (1), 112, 2006 | 7 | 2006 |
| Study for Enhancement of Terahertz Radiation Using GaSb/InAs Heterostructures S Sasa, Y Kinoshita, M Tatsumi, M Koyama, T Maemoto, S Hamauchi, ... Journal of Physics: Conference Series 906 (1), 012015, 2017 | 6 | 2017 |
| On Wasps parasitising the Seeds of Coniferous Trees. M Yano, M Koyama | 6 | 1918 |
| Method for manufacturing semiconductor device M Koyama, K Matsuura, T Komatani US Patent 9,040,426, 2015 | 5 | 2015 |
| Process of forming nitride semiconductor device M Koyama US Patent 9,799,508, 2017 | 4 | 2017 |
| Nonlinear electron transport in InAs/AlGaSb three-terminal ballistic junctions M Koyama, T Inoue, N Amano, T Maemoto, S Sasa, M Inoue Journal of Physics: Conference Series 109 (1), 012023, 2008 | 4 | 2008 |
| Nonlinear electron transport properties and rectification effects in InAs/AlGaSb ballistic devices M Koyama, T Inoue, N Amano, T Maemoto, S Sasa, M Inoue physica status solidi c 5 (1), 107-110, 2008 | 4 | 2008 |
| Characterization of the VO2 thin films grown on glass substrates by MOD H Wada, T Fukawa, K Toyota, M Koyama, N Hiroshiba, K Koike Electronics and Communications in Japan 106 (3), e12403, 2023 | 3 | 2023 |
| Characteristics of the Hf0.5Zr0.5O2 Thin Films Grown by a Chemical Solution Deposition Method M YANO, T INOUE, H OTA, T KAWAMOTO, Y HIROFUJI, M KOYAMA, ... 材料 68 (10), 745-750, 2019 | 3 | 2019 |
| Effects of He plasma treatment on zinc oxide thin film transistors S Shinya, T Kaneko, M Koyama, T Maemoto, S Sasa 2017 IEEE International Meeting for Future of Electron Devices, Kansai …, 2017 | 3 | 2017 |
| Fabrication and characterization of fully transparent zno thin-film transistors and self-switching nano-diodes Y Sun, K Ashida, S Sasaki, M Koyama, T Maemoto, S Sasa, S Kasai, ... Journal of Physics: Conference Series 647 (1), 012068, 2015 | 3 | 2015 |
| Method for fabricating semiconductor device M Koyama US Patent 8,896,025, 2014 | 3 | 2014 |
| Electron transport properties in InAs four‐terminal ballistic junctions under weak magnetic fields M Koyama, K Fujiwara, N Amano, T Maemoto, S Sasa, M Inoue physica status solidi c 6 (6), 1501-1504, 2009 | 3 | 2009 |
| Ballistic rectification effects in InAs/AlGaSb nanostructures M Koyama, H Takahashi, T Maemoto, S Sasa, M Inoue AIP Conference Proceedings 893 (1), 577-578, 2007 | 3 | 2007 |
| Decay time extension of terahertz electromagnetic waves emitted from coherent longitudinal optical phonons in GaAs epitaxial layers with the use of fast atom bombardment H Takeuchi, Y Omuku, R Onoda, T Nakaoka, J Utsumi, S Kawasaki, ... Optics Continuum 1 (10), 2212-2218, 2022 | 2 | 2022 |
| Method for manufacturing semiconductor device M Koyama, K Matsuura, T Komatani US Patent 9,299,770, 2016 | 2 | 2016 |
