| Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells H Zhao, G Liu, J Zhang, JD Poplawsky, V Dierolf, N Tansu Optics express 19 (104), A991-A1007, 2011 | 632 | 2011 |
| Defect–domain wall interactions in trigonal ferroelectrics V Gopalan, V Dierolf, DA Scrymgeour Annu. Rev. Mater. Res. 37 (1), 449-489, 2007 | 268 | 2007 |
| Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile H Zhao, G Liu, XH Li, GS Huang, JD Poplawsky, ST Penn, V Dierolf, ... Applied Physics Letters 95 (6), 2009 | 198 | 2009 |
| Stability of intrinsic defects and defect clusters in from density functional theory calculations H Xu, D Lee, J He, SB Sinnott, V Gopalan, V Dierolf, SR Phillpot Physical Review B—Condensed Matter and Materials Physics 78 (17), 174103, 2008 | 162 | 2008 |
| Characterization of new erbium-doped tellurite glasses and fibers S Marjanovic, J Toulouse, H Jain, C Sandmann, V Dierolf, AR Kortan, ... Journal of Non-Crystalline Solids 322 (1-3), 311-318, 2003 | 133 | 2003 |
| Perspective: Toward efficient GaN-based red light emitting diodes using europium doping B Mitchell, V Dierolf, T Gregorkiewicz, Y Fujiwara Journal of Applied Physics 123 (16), 2018 | 132 | 2018 |
| Direct laser-writing of ferroelectric single-crystal waveguide architectures in glass for 3D integrated optics A Stone, H Jain, V Dierolf, M Sakakura, Y Shimotsuma, K Miura, K Hirao, ... Scientific reports 5 (1), 10391, 2015 | 125 | 2015 |
| Enhanced room-temperature luminescence efficiency through carrier localization in AlxGa1− xN alloys CJ Collins, AV Sampath, GA Garrett, WL Sarney, H Shen, M Wraback, ... Applied Physics Letters 86 (3), 2005 | 120 | 2005 |
| Rare earth doped III-nitrides for optoelectronic and spintronic applications K O’Donnell, V Dierolf Springer Netherlands, 2010 | 117 | 2010 |
| Direct-write method for domain inversion patterns in V Dierolf, C Sandmann Applied Physics Letters 84 (20), 3987-3989, 2004 | 104 | 2004 |
| Three-dimensional grain boundary spectroscopy in transparent high power ceramic laser materials MO Ramirez, J Wisdom, H Li, YL Aung, J Stitt, GL Messing, V Dierolf, Z Liu, ... Optics Express 16 (9), 5965-5973, 2008 | 97 | 2008 |
| Design and characteristics of staggered InGaN quantum-well light-emitting diodes in the green spectral regime HP Zhao, GY Liu, XH Li, RA Arif, GS Huang, JD Poplawsky, S Tafon Penn, ... IET optoelectronics 3 (6), 283-295, 2009 | 96 | 2009 |
| Combined excitation-emission spectroscopy of Er 3+ ions in stoichiometric LiNbO 3: The site selectivity of direct and up conversion excitation processes V Dierolf, M Koerdt Physical Review B 61 (12), 8043, 2000 | 95 | 2000 |
| Directionally controlled 3D ferroelectric single crystal growth in LaBGeO5 glass by femtosecond laser irradiation A Stone, M Sakakura, Y Shimotsuma, G Stone, P Gupta, K Miura, K Hirao, ... Optics express 17 (25), 23284-23289, 2009 | 91 | 2009 |
| Continuous-wave optical parametric terahertz source R Sowade, I Breunig, IC Mayorga, J Kiessling, C Tulea, V Dierolf, K Buse Optics express 17 (25), 22303-22310, 2009 | 86 | 2009 |
| Spectroscopic properties of Sm3+-doped lanthanum borogermanate glass R Rajaramakrishna, B Knorr, V Dierolf, RV Anavekar, H Jain Journal of luminescence 156, 192-198, 2014 | 82 | 2014 |
| The influence of 180 ferroelectric domain wall width on the threshold field for wall motion S Choudhury, Y Li, N Odagawa, A Vasudevarao, L Tian, P Capek, ... Journal of Applied Physics 104 (8), 2008 | 74 | 2008 |
| Site-selective spectroscopy of Er in GaN V Dierolf, C Sandmann, J Zavada, P Chow, B Hertog Journal of Applied physics 95 (10), 5464-5470, 2004 | 72 | 2004 |
| Structure and energetics of ferroelectric domain walls in from atomic-level simulations D Lee, H Xu, V Dierolf, V Gopalan, SR Phillpot Physical Review B—Condensed Matter and Materials Physics 82 (1), 014104, 2010 | 70 | 2010 |
| Excitation pathways and efficiency of Eu ions in GaN by site-selective spectroscopy Z Fleischman, C Munasinghe, AJ Steckl, A Wakahara, J Zavada, V Dierolf Applied Physics B 97, 607-618, 2009 | 67 | 2009 |
Jonathan D. PoplawskyOak Ridge National Laboratory在 ornl.gov 的电子邮件经过验证
