| Lasing in direct-bandgap GeSn alloy grown on Si S Wirths, R Geiger, N Von Den Driesch, G Mussler, T Stoica, S Mantl, ... Nature photonics 9 (2), 88-92, 2015 | 1391 | 2015 |
| Si–Ge–Sn alloys: From growth to applications S Wirths, D Buca, S Mantl Progress in crystal growth and characterization of materials 62 (1), 1-39, 2016 | 305 | 2016 |
| Optically pumped GeSn microdisk lasers on Si D Stange, S Wirths, R Geiger, C Schulte-Braucks, B Marzban, ... ACS photonics 3 (7), 1279-1285, 2016 | 267 | 2016 |
| Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys A Elbaz, D Buca, N von den Driesch, K Pantzas, G Patriarche, ... Nature Photonics 14 (6), 375-382, 2020 | 225 | 2020 |
| Band engineering and growth of tensile strained Ge/(Si) GeSn heterostructures for tunnel field effect transistors S Wirths, AT Tiedemann, Z Ikonic, P Harrison, B Holländer, T Stoica, ... Applied physics letters 102 (19), 2013 | 196 | 2013 |
| Direct bandgap group IV epitaxy on Si for laser applications N Von Den Driesch, D Stange, S Wirths, G Mussler, B Hollander, Z Ikonic, ... Chemistry of Materials 27 (13), 4693-4702, 2015 | 174 | 2015 |
| Monolithic infrared silicon photonics: The rise of (Si) GeSn semiconductors O Moutanabbir, S Assali, X Gong, E O'Reilly, CA Broderick, B Marzban, ... Applied Physics Letters 118 (11), 2021 | 148 | 2021 |
| Short-wave infrared LEDs from GeSn/SiGeSn multiple quantum wells D Stange, N Von den Driesch, D Rainko, S Roesgaard, I Povstugar, ... Optica 4 (2), 185-188, 2017 | 129 | 2017 |
| Group IV photonics: driving integrated optoelectronics R Soref, D Buca, SQ Yu optics and photonics news 27 (1), 32-39, 2016 | 128 | 2016 |
| GeSn/SiGeSn heterostructure and multi quantum well lasers D Stange, N von den Driesch, T Zabel, F Armand-Pilon, D Rainko, ... ACS photonics 5 (11), 4628-4636, 2018 | 123 | 2018 |
| Low Vπ Silicon photonics modulators with highly linear epitaxially grown phase shifters SS Azadeh, F Merget, S Romero-García, A Moscoso-Mártir, ... Optics express 23 (18), 23526-23550, 2015 | 109 | 2015 |
| GeSn heterojunction LEDs on Si substrates M Oehme, K Kostecki, T Arguirov, G Mussler, K Ye, M Gollhofer, M Schmid, ... IEEE photonics technology letters 26 (2), 187-189, 2013 | 108 | 2013 |
| Optical Transitions in Direct-Bandgap Ge1–xSnx Alloys D Stange, S Wirths, N von den Driesch, G Mussler, T Stoica, Z Ikonic, ... ACS photonics 2 (11), 1539-1545, 2015 | 107 | 2015 |
| Growth and Optical Properties of Direct Band Gap Ge/Ge0.87Sn0.13 Core/Shell Nanowire Arrays S Assali, A Dijkstra, A Li, S Koelling, MA Verheijen, L Gagliano, ... Nano letters 17 (3), 1538-1544, 2017 | 102 | 2017 |
| Reduced pressure CVD growth of Ge and Ge1− xSnx alloys S Wirths, D Buca, G Mussler, AT Tiedemann, B Holländer, P Bernardy, ... ECS Journal of Solid State Science and Technology 2 (5), N99, 2013 | 101 | 2013 |
| Study of GeSn based heterostructures: towards optimized group IV MQW LEDs D Stange, N Von Den Driesch, D Rainko, C Schulte-Braucks, S Wirths, ... Optics express 24 (2), 1358-1367, 2016 | 96 | 2016 |
| Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys JH Fournier-Lupien, S Mukherjee, S Wirths, E Pippel, N Hayazawa, ... Applied physics letters 103 (26), 2013 | 90 | 2013 |
| Advanced GeSn/SiGeSn group IV heterostructure lasers N von den Driesch, D Stange, D Rainko, I Povstugar, P Zaumseil, ... Advanced science 5 (6), 1700955, 2018 | 88 | 2018 |
| Line and point tunneling in scaled Si/SiGe heterostructure TFETs M Schmidt, A Schäfer, RA Minamisawa, D Buca, S Trellenkamp, ... IEEE Electron Device Letters 35 (7), 699-701, 2014 | 88 | 2014 |
| Epitaxial growth of highly compressively strained GeSn alloys up to 12.5% Sn M Oehme, D Buca, K Kostecki, S Wirths, B Holländer, E Kasper, J Schulze Journal of crystal growth 384, 71-76, 2013 | 87 | 2013 |
