追蹤
Oscar Bulancea-Lindvall
Oscar Bulancea-Lindvall
在 liu.se 的電子郵件地址已通過驗證
標題
引用次數
引用次數
年份
Dipolar spin relaxation of divacancy qubits in silicon carbide
O Bulancea-Lindvall, NT Son, IA Abrikosov, V Ivády
npj Computational Materials 7 (1), 213, 2021
132021
Chlorine vacancy in : An NV-like defect with telecom-wavelength emission
O Bulancea-Lindvall, J Davidsson, R Armiento, IA Abrikosov
Physical Review B 108 (22), 224106, 2023
72023
Isotope-Purification-Induced Reduction of Spin-Relaxation and Spin-Coherence Times in Semiconductors
O Bulancea-Lindvall, MT Eiles, NT Son, IA Abrikosov, V Ivády
Physical Review Applied 19 (6), 064046, 2023
72023
Low-Field Microwave-Free Magnetometry Using the Dipolar Spin Relaxation of Quartet Spin States in Silicon Carbide
O Bulancea-Lindvall, MT Eiles, NT Son, IA Abrikosov, V Ivády
Physical Review Applied 19 (3), 034006, 2023
32023
Temperature dependence of the AB lines and optical properties of the carbon–antisite-vacancy pair in
O Bulancea-Lindvall, J Davidsson, IG Ivanov, A Gali, V Ivády, R Armiento, ...
Physical Review Applied 22 (3), 034056, 2024
12024
Low-symmetry vacancy-related spin qubit in hexagonal boron nitride
R Babar, G Barcza, A Pershin, H Park, O Bulancea Lindvall, G Thiering, ...
npj Computational Materials 10 (1), 184, 2024
12024
High-field/high-frequency electron spin resonances of Fe-doped by terahertz generalized ellipsometry: Monoclinic symmetry effects
S Richter, S Knight, O Bulancea-Lindvall, S Mu, P Kühne, M Stokey, ...
Physical Review B 109 (21), 214106, 2024
12024
The Chlorine Vacancy in 4H-SiC: An NV-like Defect With Telecom Emission
O Bulancea-Lindvall, J Davidsson, R Armiento, IA Abrikosov
arXiv preprint arXiv:2304.14525, 2023
12023
Low-field microwave-free sensors using dipolar spin relaxation of quartet spin states in silicon carbide
O Bulancea-Lindvall, MT Eiles, NT Son, IA Abrikosov, V Ivády
arXiv preprint arXiv:2201.03953, 2022
12022
Theoretical characterization of NV-like defects in 4H-SiC using ADAQ with the SCAN and r2SCAN meta-GGA functionals
G Abbas, O Bulancea-Lindvall, J Davidsson, R Armiento, IA Abrikosov
arXiv preprint arXiv:2501.07289, 2025
2025
Theory-Guided Design of Point-Defect Systems in Wide-Bandgap Semiconductors for Quantum Technology
O Bulancea Lindvall
Linköping University Electronic Press, 2024
2024
High-throughput study of s-and p-element point defects in 4H-SiC
O Bulancea-Lindvall, J Davidsson, V Ivady, R Armiento, IA Abrikosov
APS March Meeting Abstracts 2023, S40. 010, 2023
2023
Unexpected enhancement of quartet spin state relaxation in silicon carbide due to isotope purification
V Ivady, O Bulancea Lindvall, TS Nguyen, I Abrikosov
APS March Meeting Abstracts 2022, W36. 012, 2022
2022
First Principle Characterization of the T-center-a Single Spin Quantum Emitter in Silicon
O Bulancea Lindvall, R Babar, V Ivády, R Armiento, I Abrikosov
APS March Meeting Abstracts 2022, K67. 010, 2022
2022
First Principle Characterization of Optical Charge State Conversion of the Carbon Antisite-Vacancy in 4H-SiC
O Bulancea Lindvall, V Ivády, R Armiento, I Abrikosov
APS March Meeting Abstracts 2021, F53. 002, 2021
2021
Quantum Random Walks with Perturbing Potential Barriers
A Schwalbe Lehtihet, O Lindvall Bulancea
2017
系統目前無法執行作業,請稍後再試。
文章 1–16