Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions M Fontana, T Deppe, AK Boyd, M Rinzan, AY Liu, M Paranjape, ... Scientific reports 3 (1), 1634, 2013 | 606 | 2013 |
GaN∕ AlGaN ultraviolet/infrared dual-band detector G Ariyawansa, MBM Rinzan, M Alevli, M Strassburg, N Dietz, AGU Perera, ... Applied physics letters 89 (9), 2006 | 96 | 2006 |
Electrical properties and memory effects of field-effect transistors from networks ofsingle-and double-walled carbon nanotubes A Di Bartolomeo, M Rinzan, AK Boyd, Y Yang, L Guadagno, F Giubileo, ... Nanotechnology 21 (11), 115204, 2010 | 87 | 2010 |
Design and optimization of GaAs∕ AlGaAs heterojunction infrared detectors DG Esaev, MBM Rinzan, SG Matsik, AGU Perera Journal of Applied Physics 96 (8), 4588-4597, 2004 | 76 | 2004 |
Record endurance for single-walled carbon nanotube–based memory cell A Di Bartolomeo, Y Yang, MBM Rinzan, AK Boyd, P Barbara Nanoscale research letters 5, 1852-1855, 2010 | 67 | 2010 |
AlGaAs emitter∕ GaAs barrier terahertz detector with a 2.3 THz threshold MBM Rinzan, AGU Perera, SG Matsik, HC Liu, ZR Wasilewski, ... Applied Physics Letters 86 (7), 2005 | 64 | 2005 |
Carbon nanotube quantum dots as highly sensitive terahertz-cooled spectrometers. M Rinzan, G Jenkins, HD Drew, S Shafranjuk, P Barbara Nano letters 12 (6), 3097-3100, 2012 | 56 | 2012 |
Cutoff tailorability of heterojunction terahertz detectors SG Matsik, MBM Rinzan, AGU Perera, HC Liu, ZR Wasilewski, ... Applied physics letters 82 (1), 139-141, 2003 | 50 | 2003 |
Optical characterizations of heavily doped p-type AlxGa1− xAs and GaAs epitaxial films at terahertz frequencies ZG Hu, MBM Rinzan, SG Matsik, AGU Perera, G Von Winckel, A Stintz, ... Journal of applied physics 97 (9), 2005 | 35 | 2005 |
Resonant cavity enhancement in heterojunction GaAs/AlGaAs terahertz detectors DG Esaev, SG Matsik, MBM Rinzan, AGU Perera, HC Liu, M Buchanan Journal of applied physics 93 (4), 1879-1883, 2003 | 33 | 2003 |
Near-and far-infrared p‐GaAs dual-band detector G Ariyawansa, MBM Rinzan, DG Esaev, SG Matsik, G Hastings, ... Applied Physics Letters 86 (14), 2005 | 28 | 2005 |
GaN∕ AlGaN heterojunction infrared detector responding in 8–14 and 20–70μm ranges G Ariyawansa, MBM Rinzan, M Strassburg, N Dietz, AGU Perera, ... Applied physics letters 89 (14), 2006 | 27 | 2006 |
High performance single emitter homojunction interfacial work function far infrared detectors DG Esaev, MBM Rinzan, SG Matsik, AGU Perera, HC Liu, BN Zvonkov, ... Journal of applied physics 95 (2), 512-519, 2004 | 27 | 2004 |
20 μm cutoff heterojunction interfacial work function internal photoemission detectors SG Matsik, MBM Rinzan, DG Esaev, AGU Perera, HC Liu, M Buchanan Applied physics letters 84 (18), 3435-3437, 2004 | 24 | 2004 |
Free carrier absorption in Be-doped epitaxial AlGaAs thin films MBM Rinzan, DG Esaev, AGU Perera, SG Matsik, G Von Winckel, A Stintz, ... Applied physics letters 85 (22), 5236-5238, 2004 | 22 | 2004 |
Performance improvements of ultraviolet/infrared dual-band detectors AGU Perera, G Ariyawansa, MBM Rinzan, M Stevens, M Alevli, N Dietz, ... Infrared physics & technology 50 (2-3), 142-148, 2007 | 21 | 2007 |
The effects of light–heavy hole transitions on the cutoff wavelengths of far infrared detectors AGU Perera, SG Matsik, MBM Rinzan, A Weerasekara, M Alevli, HC Liu, ... Infrared physics & technology 44 (5-6), 347-353, 2003 | 17 | 2003 |
Characteristics of a Si dual-band detector responding in both near-and very-long-wavelength-infrared regions G Ariyawansa, MBM Rinzan, SG Matsik, G Hastings, AGU Perera, HC Liu, ... Applied physics letters 89 (6), 2006 | 16 | 2006 |
Terahertz absorption in AlGaAs films and detection using heterojunctions MBM Rinzan, AGU Perera, SG Matsik, HC Liu, M Buchanan, ... Infrared physics & technology 47 (1-2), 188-194, 2005 | 10 | 2005 |
Si doped GaAs/AlGaAs terahertz detector and phonon effect on the responsivity AB Weerasekara, MBM Rinzan, SG Matsik, AGU Perera, M Buchanan, ... Infrared physics & technology 50 (2-3), 194-198, 2007 | 8 | 2007 |