| Standard cell design in N7: EUV vs. immersion B Chava, D Rio, Y Sherazi, D Trivkovic, W Gillijns, P Debacker, ... Design-Process-Technology Co-optimization for Manufacturability IX 9427, 110-118, 2015 | 39 | 2015 |
| 5 kV multielectron beam lithography: MAPPER tool and resist process characterization D Rio, C Constancias, M Martin, B Icard, J Van Nieuwstadt, J Vijverberg, ... Journal of Vacuum Science & Technology B 28 (6), C6C14-C6C20, 2010 | 27 | 2010 |
| Study on line edge roughness for electron beam acceleration voltages from 50to5kV D Rio, C Constancias, M Saied, B Icard, L Pain Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009 | 22 | 2009 |
| Impact of an etched EUV mask black border on imaging: part II N Davydova, R de Kruif, H Morimoto, Y Sakata, J Kotani, N Fukugami, ... Photomask Technology 2013 8880, 334-345, 2013 | 20 | 2013 |
| Metal layer single EUV expose at pitch 28 nm: how bright field and NTD resist advantages align JH Franke, A Frommhold, N Davydova, R Aubert, VV Nair, T Kovalevich, ... Extreme Ultraviolet (EUV) Lithography XII 11609, 43-62, 2021 | 19 | 2021 |
| Electron beam lithography C Constancias, S Landis, S Manakli, L Martin, L Pain, D Rio Lithography, 101-182, 2013 | 19 | 2013 |
| Integrated approach to improving local CD uniformity in EUV patterning A Liang, J Hermans, T Tran, K Viatkina, CW Liang, B Ward, S Chuang, ... Extreme Ultraviolet (EUV) Lithography VIII 10143, 251-265, 2017 | 15 | 2017 |
| Extending 0.33 NA EUVL to 28 nm pitch using alternative mask and controlled aberrations D Rio, P Van Adrichem, M Delorme, K Lyakhova, C Spence, JH Franke Extreme Ultraviolet (EUV) Lithography XII 11609, 63-78, 2021 | 10 | 2021 |
| Massive metrology using fast e-beam technology improves OPC model accuracy by> 2x at faster turnaround time Q Zhao, L Wang, J Wang, CA Wang, HF Shi, J Guerrero, M Feng, Q Zhang, ... Metrology, Inspection, and Process Control for Microlithography XXXII 10585 …, 2018 | 10 | 2018 |
| Design-based metrology: Beyond CD/EPE metrics to evaluate printability performance S Halder, J Mailfert, P Leray, D Rio, YH Peng, B Laenens Metrology, Inspection, and Process Control for Microlithography XXX 9778 …, 2016 | 10 | 2016 |
| Imaging challenges in 20nm and 14nm logic nodes: hot spots performance in Metal1 layer V Timoshkov, D Rio, H Liu, W Gillijns, J Wang, P Wong, ... 29th European Mask and Lithography Conference 8886, 152-163, 2013 | 10 | 2013 |
| Validation of imaging benefits of dual monopole exposures TA Brunner, JH Franke, V Truffert, P De Bisschop, G Rispens, E Duriau, ... International Conference on Extreme Ultraviolet Lithography 2023 12750, 50-58, 2023 | 8 | 2023 |
| Extend 0.33 NA extreme ultraviolet single patterning to pitch 28-nm metal design by low- mask D Xu, W Gillijns, L Ee Tan, D Rio, M Delorme, V Philipsen, R Kim Journal of Micro/Nanopatterning, Materials, and Metrology 21 (4), 043202-043202, 2022 | 8 | 2022 |
| EUV pupil optimization for 32nm pitch logic structures D Rio, V Blanco, JH Franke, W Gillijns, M Dusa, E De Poortere, ... International Conference on Extreme Ultraviolet Lithography 2018 10809, 104-117, 2018 | 7 | 2018 |
| Mask contribution to OPC model accuracy A Lyons, T Wallow, C Hennerkes, C Spence, M Delorme, D Rio, ... Extreme Ultraviolet Lithography 2020 11517, 98-108, 2020 | 6 | 2020 |
| Single exposure EUV of 32nm pitch logic structures: patterning performance on BF and DF masks VMB Carballo, J Bekaert, JH Franke, RH Kim, E Hendrickx, LE Tan, ... Extreme Ultraviolet (EUV) Lithography IX 10583, 142-153, 2018 | 6 | 2018 |
| Influence of process parameters on hydrogen silsesquioxane chemistry at low voltage electron beam exposures D Rio, L Siegert, S Derrough, C Constancias, B Icard, H Meynen, L Pain Microelectronic engineering 87 (5-8), 914-917, 2010 | 6 | 2010 |
| Reducing systematic LCDU of dense contact hole arrays on wafer via source optimization JH Franke, L Van Look, A Frommhold, A Colina, G Rispens, D Rio, ... Photomask Japan 2023: XXIX Symposium on Photomask and Next-Generation …, 2023 | 5 | 2023 |
| EUV local CDU healing performance and modeling capability towards 5nm node TK Jee, V Timoshkov, P Choi, D Rio, YC Tsai, H Yaegashi, K Koike, ... International Conference on Extreme Ultraviolet Lithography 2017 10450, 182-190, 2017 | 5 | 2017 |
| Physical dose modeling and throughput optimization in EUV computational lithography A Peng, C Kaplan, J Lu, M Crouse, Z Li, X Xie, D Rio, A Woessner, A Tan, ... Optical and EUV Nanolithography XXXVI 12494, 81-89, 2023 | 4 | 2023 |
