Bistability of contact angle and its role in achieving quantum-thin self-assisted GaAs nanowires W Kim, VG Dubrovskii, J Vukajlovic-Plestina, G Tütüncüoglu, ... Nano letters 18 (1), 49-57, 2018 | 89 | 2018 |
Impact of the Ga droplet wetting, morphology, and pinholes on the orientation of GaAs nanowires F Matteini, G Tütüncüoglu, D Mikulik, J Vukajlovic-Plestina, H Potts, ... Crystal Growth & Design 16 (10), 5781-5786, 2016 | 50 | 2016 |
Optimizing the yield of A-polar GaAs nanowires to achieve defect-free zinc blende structure and enhanced optical functionality M Zamani, G Tütüncüoglu, S Martí-Sánchez, L Francaviglia, L Güniat, ... Nanoscale 10 (36), 17080-17091, 2018 | 41 | 2018 |
van der Waals Epitaxy of Earth-Abundant Zn3P2 on Graphene for Photovoltaics R Paul, N Humblot, SE Steinvall, EZ Stutz, SS Joglekar, JB Leran, ... Crystal Growth & Design 20 (6), 3816-3825, 2020 | 40 | 2020 |
III–V integration on Si (100): vertical nanospades L Güniat, S Martí-Sánchez, O Garcia, M Boscardin, D Vindice, N Tappy, ... ACS nano 13 (5), 5833-5840, 2019 | 29 | 2019 |
Multiple morphologies and functionality of nanowires made from earth-abundant zinc phosphide SE Steinvall, N Tappy, M Ghasemi, RR Zamani, T LaGrange, EZ Stutz, ... Nanoscale Horizons 5 (2), 274-282, 2020 | 24 | 2020 |
Towards defect-free thin films of the earth-abundant absorber zinc phosphide by nanopatterning SE Steinvall, EZ Stutz, R Paul, M Zamani, NY Dzade, V Piazza, M Friedl, ... Nanoscale Advances 3 (2), 326-332, 2021 | 18 | 2021 |
Raman spectroscopy and lattice dynamics calculations of tetragonally-structured single crystal zinc phosphide (Zn3P2) nanowires EZ Stutz, SE Steinvall, AP Litvinchuk, JB Leran, M Zamani, R Paul, ... Nanotechnology 32 (8), 085704, 2020 | 17 | 2020 |
The path towards 1 µm monocrystalline Zn3P2 films on InP: substrate preparation, growth conditions and luminescence properties M Zamani, E Stutz, S Escobar, RR Zamani, R Paul, JB Leran, ... Journal of Physics: Energy 3 (3), 034011, 2021 | 14 | 2021 |
Stoichiometry modulates the optoelectronic functionality of zinc phosphide (Zn 3− x P 2+ x) EZ Stutz, SP Ramanandan, M Flór, R Paul, M Zamani, SE Steinvall, ... Faraday Discussions 239, 202-218, 2022 | 12 | 2022 |
Molecular beam epitaxy of InAs nanowires in SiO2 nanotube templates: challenges and prospects for integration of III–Vs on Si J Vukajlovic-Plestina, VG Dubrovskii, G Tütüncuoǧlu, H Potts, R Ricca, ... Nanotechnology 27 (45), 455601, 2016 | 12 | 2016 |
Showcasing the optical properties of monocrystalline zinc phosphide thin films as an earth-abundant photovoltaic absorber EZ Stutz, M Zamani, DA Damry, L Buswell, R Paul, SE Steinvall, JB Leran, ... Materials Advances 3 (2), 1295-1303, 2022 | 11 | 2022 |
Nanoscale growth initiation as a pathway to improve the earth-abundant absorber zinc phosphide S Escobar Steinvall, EZ Stutz, R Paul, M Zamani, JB Leran, ... ACS Applied Energy Materials 5 (5), 5298-5306, 2021 | 10 | 2021 |
Rotated domains in selective area epitaxy grown Zn 3 P 2: formation mechanism and functionality MC Spadaro, SE Steinvall, NY Dzade, S Martí-Sánchez, P Torres-Vila, ... Nanoscale 13 (44), 18441-18450, 2021 | 10 | 2021 |
Heterotwin Zn 3 P 2 superlattice nanowires: the role of indium insertion in the superlattice formation mechanism and their optical properties SE Steinvall, L Ghisalberti, RR Zamani, N Tappy, FS Hage, EZ Stutz, ... Nanoscale 12 (44), 22534-22540, 2020 | 9 | 2020 |
Raman tensor of zinc-phosphide (Zn 3 P 2): from polarization measurements to simulation of Raman spectra M Flór, EZ Stutz, SP Ramanandan, M Zamani, R Paul, JB Leran, ... Physical Chemistry Chemical Physics 24 (1), 63-72, 2022 | 7 | 2022 |
Facet-driven formation of axial and radial In (Ga) As clusters in GaAs nanowires A Balgarkashi, SP Ramanandan, N Tappy, M Nahra, W Kim, L Güniat, ... Journal of Optics 22 (8), 084002, 2020 | 6 | 2020 |
GaAs nanowires on Si nanopillars: towards large scale, phase-engineered arrays L Güniat, L Ghisalberti, L Wang, C Dais, N Morgan, D Dede, W Kim, ... Nanoscale Horizons 7 (2), 211-219, 2022 | 5 | 2022 |
Tilting catalyst-free InAs nanowires by 3D-twinning and unusual growth directions H Potts, Y Van Hees, G Tütüncüoglu, M Friedl, JB Leran, ... Crystal Growth & Design 17 (7), 3596-3605, 2017 | 5 | 2017 |
Electrochemical cell P Heck, M Stalder, F Zuellig, K Sohi, Y Leterrier, JL Moll, JB Leran, ... US Patent 10,396,392, 2019 | 4 | 2019 |