Impact ionization in thick multiplication regions is adequately described by models in which
the ionization coefficients are functions only of the local electric field. In devices with thin …

For Part I see RJ McIntyre, ibid., vol. 46, no. 8, pp. 1623-31 (1999). In Part I, a new theory for
impact ionization that utilizes history-dependent ionization coefficients to account for the …

Recently, an impact ionization model, which takes the nonlocal nature of the impact
ionization process into account, has been described. This model incorporates history …

Avalanche noise measurements have been performed on a range of homojunction GaAs
p/sup+/-in/sup+/and n/sup+/-ip/sup+/diodes with" i" region widths,/spl omega/from 2.61 to …

Low excess noise in avalanche photodetectors (APDs) is desired for improved sensitivity
and high-frequency performance. Gain and noise characteristics are measured for InAlAs …

In this paper we review the underlying physical principles behind the workings of
superlattice/multiquantum well avalanche photodiodes (APDs), examine various device …

An avalanche photodiode (APD) is a widely used device, especially in weak light detection
systems like fiber optic detection. InAlAs is suitable for the fabrication of multiplication and …

A simple Monte Carlo model (SMC) using single effective parabolic valleys and accurately
accounting for deadspace effects is presented for calculating the avalanche process. Very …

Nonlinearity in pin photodetectors leads to power generation at harmonics of the input
frequency, limiting the performance of RF-photonic systems. We use one-dimensional and …

Previously, it has been shown that resonant-cavity separate-absorption-and-multiplication
(SAM) avalanche photodiodes (APD's) exhibit high-speed and high gain-bandwidth …