Recently, the development of novel metal-containing resists has received much attention in
extreme ultraviolet lithography (EUVL) owing to their smaller sizes and higher EUV …

The semiconductor industry has long been driven by advances in a nanofabrication
technology known as lithography, and the fabrication of nanostructures on chips relies on an …

The absorption of extreme ultraviolet (EUV) radiation by a photoresist strongly depends on
its atomic composition. Consequently, elements with a high EUV absorption cross section …

Resists that enable high-throughput and high-resolution patterning are essential in driving
the semiconductor technology forward. The ultimate patterning performance of a resist in …

The continuous scaling down of semiconductor devices has significantly benefited
consumers by enhancing the device performance, portability, power efficiency, and …

In this paper, the utilization of lithographic materials for semiconductor patterning
applications based on optical and EUV radiation sources is reviewed. Photoresist platforms …

Extreme-ultraviolet (EUV) photolithography, which enables the high-throughput production
of well-defined patterns with critical dimensions on the scale of several nanometers, is …

Metal–organic nanoclusters (MOCs) are being increasingly used as prospective photoresist
candidates for advanced nanoscale lithography technologies. However, insight into the …

Low reflectivity of multilayer mirror–induced low efficiency of existing extreme ultraviolet
lithography (EUVL) has triggered the search for photoresists with heightened sensitivity. For …

Background: Metal-containing resists entered the mainstream semiconductor industry
process flow to mitigate the low absorbance of extreme ultraviolet (EUV) radiation by thin …