We present a systematic study of the effect of strain (equivalent to uniform pressure) on the
thermal conductivity of an insulating solid. Following a theoretical analysis that uncovers the …

The effect of strain on thermal conductivity of amorphous SiO 2 thin films is simulated by
using molecular dynamics simulation (MD). The calculated results indicate that the thermal …

We propose a test method to study the effects of strain on the thermal conductivity of thin
films. First, a strain setup was designed to apply stress to a thin film, and a test system was …

The strain relaxation of GaAsBi is studied in order to determine both the maximum thickness
before dislocations form for various misfits and the potential of GaAsBi for usage in the …

Defect formation and strain relaxation in step-graded Ga As 1− x N x and Ga As 1− y P y
buffer structures grown by metal-organic vapor phase epitaxy on GaAs (001) substrates …

Semiconductor alloys that are lattice matched to GaAs but have a smaller energy band gap
are of interest for numerous applications, including infrared lasers for telecommunications …

Transmission electron microscopy of cross-section specimens and high-resolution X-ray
diffraction analyses have been applied to investigate the formation of defects and the …

Several benefits of in situ wafer curvature monitoring on simple structures with low misfit are
discussed. The misfit of lattice-mismatched layers is measured during pseudomorphic …

The effect of strain on GaAs 1− x N x grown on GaAs is observed using two-dimensional
[115] high-resolution x-ray diffraction rocking curves. The instance when the epilayer …

Nonequilibrium molecular dynamics (NEMD) simulations are employed to gain an
understanding of the effect of strain on the thermal conductivity of Si thin films. The analysis …