In1 − xGaxAs Double Metal Gate-Stacking Cylindrical Nanowire MOSFET for Highly Sensitive Photo Detector
This paper proposed a highly sensitive Double Metal Gate-stacking Cylindrical Nanowire-
MOSFET (DMG CL-NWMOSFET) photosensor by using In 1− x Ga x As. For the best control …
MOSFET (DMG CL-NWMOSFET) photosensor by using In 1− x Ga x As. For the best control …
Design and sensitivity estimation of linear graded work function gate electrode hetero junction vertical TFET biosensor
This work addresses a novel biosensor design and its surface potential sensitivity analysis
to identify various biomolecules. The designed structure integrates the attributes of linear …
to identify various biomolecules. The designed structure integrates the attributes of linear …
An improved analytical modeling and simulation of gate stacked linearly graded work function vertical TFET
In this paper, a 2D analytical potential model for n+ SiGe Gate stacked linearly graded work
function Vertical TFET (n+ SiGe GS-LGW-VTFET) is developed with incorporating the effect …
function Vertical TFET (n+ SiGe GS-LGW-VTFET) is developed with incorporating the effect …
Realization of Boolean functions using heterojunction tunnel FETs
In this paper, a compact implementation of logic gates using dual pocket-heterojunction
tunnel FET (HTJ-TFET) have been proposed for digital applications. The gate to source …
tunnel FET (HTJ-TFET) have been proposed for digital applications. The gate to source …
Design and analysis of triple metal vertical TFET gate stacked with N-Type SiGe delta-doped layer
This work deals with the novel characterization of n+ SiGe δ-doped layer with the
combination of gate stacking method in Vertical TFET device by using TCAD simulation tool …
combination of gate stacking method in Vertical TFET device by using TCAD simulation tool …
Design and performance analysis of ultrathin nanowire FET ammonia gas sensor
In this work, an ultrathin 3 nm nanowire field-effect transistor (NWFET) based ammonia gas
sensor is designed, and its sensitivity is analyzed at room temperature. The designed …
sensor is designed, and its sensitivity is analyzed at room temperature. The designed …
Parameter variation analysis of do**less and junctionless nanotube MOSFET
In this paper, do**less nanotube MOSFET (DL-NT MOSFET) has been designed for low
power circuit applications. Performance parameters of proposed device are extracted and …
power circuit applications. Performance parameters of proposed device are extracted and …
Temperature sensitivity of GaSb/Si/SiGe heterojunction vertical nanowire junctionless field-effect transistor for logic circuit applications
In this article, a GaSb/Si/SiGe heterojunction vertical nanowire (V-NW) junctionless field-
effect transistors (JFETs) under the influence of elevated temperature have been …
effect transistors (JFETs) under the influence of elevated temperature have been …
Design and parametric analysis of GaN on silicon high electron mobility transistor for RF performance enhancement
The need of performance enhancement at the RF and millimeter wave is highly desirable to
eliminate the heating effects and power dissipation. Silicon substarte found to be a suitable …
eliminate the heating effects and power dissipation. Silicon substarte found to be a suitable …
Design and performance assessment of GaSb/Si heterojunction vertical TFET with delta doped layer for enhanced DC and AF/RF characteristics
In this study, we suggest a novel GaSb/Si Heterojunction incorporated with a delta-doped
layer in a Vertical TFET (GaSb-VTFET). The motivation behind the work is to have improved …
layer in a Vertical TFET (GaSb-VTFET). The motivation behind the work is to have improved …