Gallium oxide, as an emerging semiconductor, has attracted a lot of attention among
researchers due to its high band gap (4.8 eV) and a high critical field with the value of 8 …

Ga2O3 has gained intensive attention for the continuing myth of the electronics as a new-
generation wide bandgap semiconductor, owing to its natural physical and chemical …

Thermoreflectance-based techniques, such as pump–probe thermoreflectance (pump–
probe TR) and thermoreflectance thermal imaging (TTI), have emerged as the powerful and …

The characteristics of amorphous Sn-doped Ga 2 O 3 films deposited using radio frequency
magnetron sputtering at room temperature under different sputter powers have been …

In this study, monoclinic gallium oxide (β-Ga 2 O 3) epilayer was successfully grown on c-
plane,(0001), sapphire substrate by metalorganic chemical vapor deposition (MOCVD) with …

Gallium trioxide, β‐Ga2O3, has been recently studied due to its promising semiconducting
properties as active material in transistors or Schottky diodes. Transistors with β‐Ga2O3 …

The epitaxial growth of technically important β-Ga2O3 semiconductor thin films has not been
realized on flexible substrates due to the limitations of high-temperature crystallization …

In this Letter, we report on a monolithically integrated β-Ga2O3 NMOS inverter integrated
circuit (IC) based on heteroepitaxial enhancement mode (E-mode) β-Ga2O3 metal-oxide …

β-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) with various
unintentionally doped (UID) layer thicknesses (50, 100, and 200 nm) of (2̅01) beneath the …

We have systematically investigated the effects of all possible combinations of vacancies
and silicon substitutions on the electronic structure of the β and κ phases of Ga 2 O 3 using …