Role of surrounding dielectric matrices on the nonlinear properties of group II-VI core/shell dot in the presence of electric field

N Amin, AJ Peter - Micro and Nanostructures, 2024 - Elsevier
The effects of geometrical parameters, relaxation time, impurity distance, incident optical
intensity and electric strength on binding energy of an impurity situated in CdSe/ZnS CSQD …

Electron-Related Properties in a GaAs/GaAlAs Ultra-thin Core/Shell Film through External Field direction for Energy and Photonic Devices

I Maouhoubi, R Boussetta, S Chouef… - Physica B: Condensed …, 2024 - Elsevier
In this paper, we investigate electron-related properties in GaAs/GaAlAs Ultra-thin
Core/Shell Film Quantum dot (UTFQD), examining the effects of external electric fields …

Optical Properties of Three‐Electron GaAs/AlxGa1−xAs QDs with Finite Confinement Potential

Y Yakar, B Çakır, A Özmen - Advanced Theory and Simulations, 2024 - Wiley Online Library
In the case of finite confinement potential, the average energies and corresponding wave
functions for the 1s2nl configurations, in which nl= 2s, 2p, 3d, and 4f, of three‐electron …

Investigation of the Electronic Structure in GaAs/AlxGa1‐xAs Quantum Dots with Four Electrons

B Çakır, Y Yakar, A Özmen - Advanced Theory and Simulations, 2025 - Wiley Online Library
In this paper, a detailed analysis of the electronic structure of four‐electron quantum dots is
performed with finite confinement potential by a modified variational optimization approach …

Binding energy and susceptibility of a donor in a Woods-Saxon quantum well with an applied magnetic field

M Gayathri, M Arulmozhi - Philosophical Magazine, 2024 - Taylor & Francis
Donor binding energy and diamagnetic susceptibility in a Woods-Saxon Quantum Well with
GaAs/Al x Ga1-x As are examined in this study for the variation of well width (L), aluminium …

[CITATION][C] Optical Properties of Three-Electron GaAs/Al x Ga

Y Yakar, B Çakır, A Özmen - 2024