Efficacy of ion implantation in zinc oxide for optoelectronic applications: A review
Unlike the majority of the silicon-based electronic devices, optoelectronic devices are
predominantly made using III–V and II–VI semiconductor compounds and their alloys …
predominantly made using III–V and II–VI semiconductor compounds and their alloys …
High conductivity along with high visible light transparency in Al implanted sol-gel ZnO thin film with an elevated figure of merit value as a transparent conducting layer
In this work, sol–gel ZnO thin films were implanted with Al ions of various fluences to study
their electrical transport properties as transparent conducting oxide (TCO) layers …
their electrical transport properties as transparent conducting oxide (TCO) layers …
Mechanism of converting n-type to p-type conductivity in ZnO nanorods array films co-implanted with nitrogen and lithium ions
Here, we report a stable p-type conductivity in aqueous chemically grown ZnO nanorods
array films co-implanted with N and Li ions. We have successfully achieved p-type …
array films co-implanted with N and Li ions. We have successfully achieved p-type …
Clustered vacancies in ZnO: chemical aspects and consequences on physical properties
The chemical nature of point defects, their segregation, cluster or complex formation in ZnO
is an important area of investigation. The evolution of a defective state with MeV Ar ion …
is an important area of investigation. The evolution of a defective state with MeV Ar ion …
Observation of magnetism, low resistivity, and magnetoresistance in the near-surface region of Gd implanted ZnO
Ferromagnetic order is observed in Gd ion implanted ZnO crystals after annealing at 650 C
in a vacuum and we find that it is intrinsic and extends to depths of up to 40 nm. The …
in a vacuum and we find that it is intrinsic and extends to depths of up to 40 nm. The …
Interplay of defects in low energy nitrogen implanted ZnO nanorods
We present here an in-depth comprehensive study on the interplay between nitrogen (N)
and various point defects in ZnO nanorods (NRs) implanted with 50 keV N ions with fluences …
and various point defects in ZnO nanorods (NRs) implanted with 50 keV N ions with fluences …
[BOOK][B] Radiation synthesis of materials and compounds
BI Kharisov, OV Kharissova, UO Méndez - 2016 - books.google.com
This book presents the state of the art of the synthesis of materials, composites, and
chemical compounds, and describes methods based on the use of ionizing radiation. It is …
chemical compounds, and describes methods based on the use of ionizing radiation. It is …
Drastic evolution of point defects in vertically grown ZnO nanorods induced by lithium ion implantation
The evolution of various point defects in 100 keV lithium (Li) ion-implanted ZnO nanorods
(NRs) by varying the fluences from 1× 1014 to 7× 1015 ions per cm2 has been investigated …
(NRs) by varying the fluences from 1× 1014 to 7× 1015 ions per cm2 has been investigated …
Effect of 50 MeV Li3+ irradiation on structural and electrical properties of Mn-doped ZnO
The present work aims to study the effect of ion irradiation on structural and electrical
properties and their correlation with the defects in the Zn 1− x Mn x O-type system. Zn 1− x …
properties and their correlation with the defects in the Zn 1− x Mn x O-type system. Zn 1− x …
Enhanced ferromagnetism by ion irradiation for substitutionally cobalt doped ZnO films
SK Neogi, MA Ahmed, A Banerjee… - Applied Surface …, 2019 - Elsevier
Abstract 3 at.% Co doped sol-gel derived films were irradiated with 800 keV Ar ion beam.
The studied films were un-irradiated and irradiated with fluences 5× 10 14, 2.5× 10 15 and …
The studied films were un-irradiated and irradiated with fluences 5× 10 14, 2.5× 10 15 and …