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InGaP χ(2) integrated photonics platform for broadband, ultra-efficient nonlinear conversion and entangled photon generation
Nonlinear optics plays an important role in many areas of science and technology. The
advance of nonlinear optics is empowered by the discovery and utilization of materials with …
advance of nonlinear optics is empowered by the discovery and utilization of materials with …
Study of short-wavelength red semiconductor laser using high Ga composition GaInP quantum well based on Ge/SiGe substrate
J **e, T Lin, C Wang, J Shi, C **e - Applied Physics B, 2023 - Springer
To meet the increasing demand of short-wavelength red lasers for laser display technology
and medical applications, we propose a new short-wavelength red semiconductor laser …
and medical applications, we propose a new short-wavelength red semiconductor laser …
Quantum well intermixing of tensile strain GaInP quantum well structures induced by ion implantation and thermal annealing
T Lin, Y Li, J **e, Z Ma, R Zhao, Y Duan - Materials Science in …, 2022 - Elsevier
In this study, it is proposed to implanted nitrogen ions into the high Ga component tensile
strain GaInP/AlGaInP quantum well material, resulting in the mixing of quantum well, so as to …
strain GaInP/AlGaInP quantum well material, resulting in the mixing of quantum well, so as to …
Broadband yellow-orange light generation based on a step-chirped PPMgLN ridge waveguide
H Chen, H Huang, J Cheng, X Zhang, X Feng… - Optics …, 2022 - opg.optica.org
Yellow-orange lights, valuable in photodynamic therapies, spectroscopy, and optogenetics,
are limited by the narrow bandwidth and bulky setup via the conventional Raman or optical …
are limited by the narrow bandwidth and bulky setup via the conventional Raman or optical …
Eu3+ and Cu2+ ions doped ZnS microspheres emission in the yellow–orange region
Photoluminescence (PL) emission properties of hydrothermally synthesized zinc sulfide
(ZnS) and doped (Cu 2+, Eu 3+, Cu 2+ and Eu 3+) zinc sulfide microspheres were studied …
(ZnS) and doped (Cu 2+, Eu 3+, Cu 2+ and Eu 3+) zinc sulfide microspheres were studied …
Composition and interface research on quantum well intermixing between a tensile GaInP quantum well and compressed AlGaInP barriers
T Lin, Y Li, J **e, W Sun, Y Mu, H **e… - Journal of Electronic …, 2022 - Springer
The cross-sectional morphology and atomic composition of samples before and after
nitrogen ion implantation were compared and analyzed by high-resolution transmission …
nitrogen ion implantation were compared and analyzed by high-resolution transmission …
First demonstration of orange-yellow light emitter devices in InGaP/InAlGaP laser structure using strain-induced quantum well intermixing technique
In this paper, a novel strain-induced quantum well intermixing (QWI) technique is employed
on InGaP/InAlGaP material system to promote interdiffusion via application of a thick …
on InGaP/InAlGaP material system to promote interdiffusion via application of a thick …
[HTML][HTML] Broadband and triple-wavelength continuous wave orange laser by single-pass sum-frequency generation in step-chirped MgO: PPLN
G Li, DK Choge, H Chen, Y Xu, L Guo, W Liang - Applied Sciences, 2018 - mdpi.com
We have demonstrated sum-frequency generation of a compact continuous-wave orange
laser in a step-chirped magnesium oxide doped periodically poled lithium niobate in single …
laser in a step-chirped magnesium oxide doped periodically poled lithium niobate in single …
Multi-peak tunable CW orange laser based on single-pass sum frequency generation in step-chirped MgO: PPLN
DK Choge, HX Chen, BL Tian, YB Xu, GW Li… - Optical and Quantum …, 2018 - Springer
We report an all-solid-state tunable CW orange laser based on single-pass sum-frequency
generation in step-chirped PPMgO: LN crystal. Two laser sources, a tunable laser (1550 nm) …
generation in step-chirped PPMgO: LN crystal. Two laser sources, a tunable laser (1550 nm) …
Effect of annealing InGaP/InAlGaP laser structure at 950 C on laser characteristics
We achieved considerable laser diode (LD) improvement after annealing InGaP/InAlGaP
laser structure at 950° C for a total annealing time of 2 min. The photoluminescence intensity …
laser structure at 950° C for a total annealing time of 2 min. The photoluminescence intensity …