InGaP χ(2) integrated photonics platform for broadband, ultra-efficient nonlinear conversion and entangled photon generation

J Akin, Y Zhao, Y Misra, AKMN Haque… - Light: Science & …, 2024 - nature.com
Nonlinear optics plays an important role in many areas of science and technology. The
advance of nonlinear optics is empowered by the discovery and utilization of materials with …

Study of short-wavelength red semiconductor laser using high Ga composition GaInP quantum well based on Ge/SiGe substrate

J **e, T Lin, C Wang, J Shi, C **e - Applied Physics B, 2023 - Springer
To meet the increasing demand of short-wavelength red lasers for laser display technology
and medical applications, we propose a new short-wavelength red semiconductor laser …

Quantum well intermixing of tensile strain GaInP quantum well structures induced by ion implantation and thermal annealing

T Lin, Y Li, J **e, Z Ma, R Zhao, Y Duan - Materials Science in …, 2022 - Elsevier
In this study, it is proposed to implanted nitrogen ions into the high Ga component tensile
strain GaInP/AlGaInP quantum well material, resulting in the mixing of quantum well, so as to …

Broadband yellow-orange light generation based on a step-chirped PPMgLN ridge waveguide

H Chen, H Huang, J Cheng, X Zhang, X Feng… - Optics …, 2022 - opg.optica.org
Yellow-orange lights, valuable in photodynamic therapies, spectroscopy, and optogenetics,
are limited by the narrow bandwidth and bulky setup via the conventional Raman or optical …

Eu3+ and Cu2+ ions doped ZnS microspheres emission in the yellow–orange region

CKK Sagar, P Sajan, MJ Bushiri - Journal of Materials Science: Materials …, 2019 - Springer
Photoluminescence (PL) emission properties of hydrothermally synthesized zinc sulfide
(ZnS) and doped (Cu 2+, Eu 3+, Cu 2+ and Eu 3+) zinc sulfide microspheres were studied …

Composition and interface research on quantum well intermixing between a tensile GaInP quantum well and compressed AlGaInP barriers

T Lin, Y Li, J **e, W Sun, Y Mu, H **e… - Journal of Electronic …, 2022 - Springer
The cross-sectional morphology and atomic composition of samples before and after
nitrogen ion implantation were compared and analyzed by high-resolution transmission …

First demonstration of orange-yellow light emitter devices in InGaP/InAlGaP laser structure using strain-induced quantum well intermixing technique

MA Majid, AA Al-Jabr, RT Elafandy… - Novel In-Plane …, 2016 - spiedigitallibrary.org
In this paper, a novel strain-induced quantum well intermixing (QWI) technique is employed
on InGaP/InAlGaP material system to promote interdiffusion via application of a thick …

[HTML][HTML] Broadband and triple-wavelength continuous wave orange laser by single-pass sum-frequency generation in step-chirped MgO: PPLN

G Li, DK Choge, H Chen, Y Xu, L Guo, W Liang - Applied Sciences, 2018 - mdpi.com
We have demonstrated sum-frequency generation of a compact continuous-wave orange
laser in a step-chirped magnesium oxide doped periodically poled lithium niobate in single …

Multi-peak tunable CW orange laser based on single-pass sum frequency generation in step-chirped MgO: PPLN

DK Choge, HX Chen, BL Tian, YB Xu, GW Li… - Optical and Quantum …, 2018 - Springer
We report an all-solid-state tunable CW orange laser based on single-pass sum-frequency
generation in step-chirped PPMgO: LN crystal. Two laser sources, a tunable laser (1550 nm) …

Effect of annealing InGaP/InAlGaP laser structure at 950 C on laser characteristics

AA Al-Jabr, P Mishra, MA Majid, TK Ng… - Journal of …, 2016 - spiedigitallibrary.org
We achieved considerable laser diode (LD) improvement after annealing InGaP/InAlGaP
laser structure at 950° C for a total annealing time of 2 min. The photoluminescence intensity …