As CMOS technology begins to face significant scaling challenges, considerable research
efforts are being directed to investigate alternative device technologies that can serve as a …

In-memory computing is a promising approach to addressing the processor-memory data
transfer bottleneck in computing systems. We propose spin-transfer torque compute-in …

Silicon-based static random access memories (SRAM) and digital Boolean logic have been
the workhorse of the state-of-the-art computing platforms. Despite tremendous strides in …

Historically, memory technologies have been evaluated based on their storage density, cost,
and latencies. Beyond these metrics, the need to enable smarter and intelligent computing …

Spin-transfer torque magnetic memory (STT-MRAM) has gained significant research interest
due to its nonvolatility and zero standby leakage, near unlimited endurance, excellent …

The use of deep learning (DL) to real-world applications, such as computer vision, speech
recognition, and robotics, has become ubiquitous. This can be largely attributed to a virtuous …

In today's digital computing landscape, In-Memory Computing (IMC) has emerged as a
revolutionary approach to tackling critical energy efficiency and latency challenges …

Resistance random access memory (RRAM) is considered a promising candidate for the
next generation of non-volatile memory. In this work, we fabricate metal (Ag, Ti, or Pt)/ZnO/Pt …

With the increasing gap between processing speed and memory bandwidth necessity for
in/near-memory computing has emerged, to ensure high-performance, energy-efficient …

With the development of modern computer storage technology, the spin-transfer torque
magnetic random-access memory (STT-MRAM) has become one of the most promising …