Performance Limit of Gate-All-Around Nanowire Field-Effect Transistors: An Ab Initio Quantum Transport Simulation
The gate-all-around (GAA) Si nanowire (NW) field-effect transistor (FET) is considered one
of the most promising successors of the current mainstream Si fin FET (FinFET) owing to its …
of the most promising successors of the current mainstream Si fin FET (FinFET) owing to its …
Challenges of 22 nm and beyond CMOS technology
R Huang, HM Wu, JF Kang, DY ** and the gate …
High-performance chlorophyll-b/Si nanowire heterostructure for self-biasing bioinorganic hybrid photodetectors
As one kind of ecofriendly organic semiconductor materials, chlorophyll has attracted great
attention with useful optical properties. Although pigments such as chlorophyll-a (Chl-a) are …
attention with useful optical properties. Although pigments such as chlorophyll-a (Chl-a) are …
Research Updates: The three M's (materials, metrology, and modeling) together pave the path to future nanoelectronic technologies
SW King, H Simka, D Herr, H Akinaga, M Garner - APL Materials, 2013 - pubs.aip.org
Recent discussions concerning the continuation of Moore's law have focused on
announcements by several major corporations to transition from traditional 2D planar to new …
announcements by several major corporations to transition from traditional 2D planar to new …
Extraction of mobility from quantum transport calculations of type-ii superlattices
Type-II superlattices (T2SLs) are being investigated as an alternative to traditional bulk
materials in infrared photodetectors due to predicted fundamental advantages. Subject to …
materials in infrared photodetectors due to predicted fundamental advantages. Subject to …
Predictive 3-D modeling of parasitic gate capacitance in gate-all-around cylindrical silicon nanowire MOSFETs
In this paper, an analytical model for parasitic gate capacitances in gate-all-around
cylindrical silicon nanowire MOSFETs (SNWTs) is developed for the first time. A practical 3 …
cylindrical silicon nanowire MOSFETs (SNWTs) is developed for the first time. A practical 3 …
Analysis of carrier transport in short-channel MOSFETs
A Majumdar, DA Antoniadis - IEEE Transactions on Electron …, 2014 - ieeexplore.ieee.org
A method for extracting transport parameters in short-channel FETs is presented in the
context of the Lundstrom model for quasi-ballistic short-channel FETs. The parameters …
context of the Lundstrom model for quasi-ballistic short-channel FETs. The parameters …