[HTML][HTML] Toward AlGaN channel HEMTs on AlN: Polarization-induced 2DEGs in AlN/AlGaN/AlN heterostructures
Due to its high breakdown electric field, the ultra-wide bandgap semiconductor AlGaN has
garnered much attention recently as a promising channel material for next-generation high …
garnered much attention recently as a promising channel material for next-generation high …
First RF power operation of AlN/GaN/AlN HEMTs with> 3 A/mm and 3 W/mm at 10 GHz
The AlN/GaN/AlN heterostructure is attractive for microwave and millimeter-wave power
devices due to its thin top barrier, tight carrier confinement, and improved breakdown …
devices due to its thin top barrier, tight carrier confinement, and improved breakdown …
A two-step in situ measurement method for temperature and thermal stress of power device based on a single Raman peak
Y Li, A Fan, X Zhang, X Zhang - International Journal of Heat and Mass …, 2023 - Elsevier
Temperature and thermal stress are primary factors leading to the performance failure of
power devices. Thus, simultaneously determining the temperature and stress variation of the …
power devices. Thus, simultaneously determining the temperature and stress variation of the …
AlN/AlGaN/AlN quantum well channel HEMTs
We present a compositional dependence study of electrical characteristics of Al x Ga 1− x N
quantum well channel-based AlN/AlGaN/AlN high electron mobility transistors (HEMTs) with …
quantum well channel-based AlN/AlGaN/AlN high electron mobility transistors (HEMTs) with …
High conductivity coherently strained quantum well XHEMT heterostructures on AlN substrates with delta do**
Polarization-induced two-dimensional electron gases (2DEGs) in AlN/GaN/AlN quantum
well high-electron-mobility transistors on ultrawide bandgap AlN substrates offer a promising …
well high-electron-mobility transistors on ultrawide bandgap AlN substrates offer a promising …
In Situ Crystalline AlN Passivation for Reduced RF Dispersion in Strained‐Channel AlN/GaN/AlN High‐Electron‐Mobility Transistors
The recent demonstration of≈ 2 W mm− 1 output power at 94 GHz in AlN/GaN/AlN high‐
electron‐mobility transistors (HEMTs) has established AlN as a promising platform for …
electron‐mobility transistors (HEMTs) has established AlN as a promising platform for …
[HTML][HTML] High-density polarization-induced 2D electron gases in N-polar pseudomorphic undoped GaN/Al0. 85Ga0. 15N heterostructures on single-crystal AlN …
The polarization difference and band offset between Al (Ga) N and GaN induce two-
dimensional (2D) free carriers in Al (Ga) N/GaN heterojunctions without any chemical …
dimensional (2D) free carriers in Al (Ga) N/GaN heterojunctions without any chemical …
Electron mobility enhancement by electric field engineering of AlN/GaN/AlN quantum-well HEMTs on single-crystal AlN substrates
To enhance the electron mobility in quantum-well high-electron-mobility transistors (QW
HEMTs), we investigate the transport properties in AlN/GaN/AlN heterostructures on Al-polar …
HEMTs), we investigate the transport properties in AlN/GaN/AlN heterostructures on Al-polar …
Improved channel electron mobility through electric field reduction in GaN quantum-well double-heterostructures
J Yaita, K Fukuda, A Yamada, T Iwasaki… - IEEE Electron …, 2021 - ieeexplore.ieee.org
To improve the electron mobility of quantum well (QW) gallium nitride (GaN) high electron
mobility transistors (HEMT), we investigated QW and conventional AlGaN/GaN …
mobility transistors (HEMT), we investigated QW and conventional AlGaN/GaN …
Ab initio investigations of two-dimensional carrier gas at interfaces in GaN/AlN and GaN/AlN/Al2O3 heterostructures
The formation of a two-dimensional electron gas (2DEG) at the GaN (0001)/AlN interface
holds significant implications for GaN-based high-voltage and high-frequency (RF) devices …
holds significant implications for GaN-based high-voltage and high-frequency (RF) devices …