Phase transitions are a common phenomenon in condensed matter and act as a critical
degree of freedom that can be employed to tailor the mechanical or electronic properties of …

The electron mean free path λ and carrier relaxation time τ of the twenty most conductive
elemental metals are determined by numerical integration over the Fermi surface obtained …

A major challenge for the continued downscaling of integrated circuits is the resistivity
increase of Cu interconnect lines with decreasing dimensions. Alternative metals have the …

We performed a full map** of the bulk electronic structure including the Fermi surface and
Fermi-velocity distribution v F (k F) of tungsten. The 4D spectral function ρ (EB; k) in the …

Epitaxial Ru (0001) layers are sputter deposited onto Al 2 O 3 (0001) substrates and their
resistivity ρ measured both in situ and ex situ as a function of thickness d= 5–80 nm in order …

Metals are generally considered good reflectors over the entire electromagnetic spectrum up
to their plasma frequency. Here we demonstrate an approach to tailor their absorbing …

W–Cu alloys are typically used for heat sinks, radiation shielding or high performance
contact materials. Their immiscibility leads to interpenetrating structures, with typically …

The resistivity of nanoscale metallic conductors is orientation dependent, even if the bulk
resistivity is isotropic and electron scattering cross-sections are independent of momentum …

These days, the process of plasma etching is exhibited in various forms, including the
reactive ion etching (RIE) method. Not only memory device but also computing element such …