In recent years, with the further ministration of the semiconductor device in integrated
circuits, power consumption and data transmission bandwidth have become insurmountable …

Abstract Silicon Photonics Technology using sub micrometer SOI platform, which
commercially emerged at the beginning of the century, has now gained market shares in the …

By analyzing the propagating behavior of the supermodes in a coupled-waveguide system,
we have derived a universal criterion for designing adiabatic mode transformers. The …

Featured Application Ultra-low-loss Si waveguide platform for heterogeneous integration
with III/V. Abstract Integrated ultra-low-loss waveguides are highly desired for integrated …

We report the first demonstration of an electrically driven hybrid silicon/III–V laser based on
adiabatic mode transformers. The hybrid structure is formed by two vertically superimposed …

Hybrid Si/III-V, Fabry-Perot evanescent lasers are demonstrated, utilizing InGaAsP as the III-
V gain material for the first time to our knowledge. The lasing threshold current of 300-μm …

Due to the indirect bandgap nature, the widely used silicon CMOS is very inefficient at light
emitting. The integration of silicon lasers is deemed as the'Mount Everest'for the full take-up …

Epitaxial lateral overgrowth (ELOG) technology is demonstrated as a viable technology to
realize monolithic integration of III-Vs on silicon. As an alternative to wafer-to-wafer bonding …

Integrated semiconductor lasers on silicon are one of the most crucial devices to enable low-
cost silicon photonic integrated circuits for high-bandwidth optic communications and …

We present the design of two novel adiabatic tapered coupling structures that allow efficient
and alignment tolerant mode conversion between a III–V membrane waveguide and a …