[HTML][HTML] Reliability of analog resistive switching memory for neuromorphic computing
As artificial intelligence calls for novel energy-efficient hardware, neuromorphic computing
systems based on analog resistive switching memory (RSM) devices have drawn great …
systems based on analog resistive switching memory (RSM) devices have drawn great …
Materials for high-temperature digital electronics
Silicon microelectronics, consisting of complementary metal–oxide–semiconductor
technology, have changed nearly all aspects of human life from communication to …
technology, have changed nearly all aspects of human life from communication to …
A review on device requirements of resistive random access memory (RRAM)-based neuromorphic computing
With the arrival of the era of big data, the conventional von Neumann architecture is now
insufficient owing to its high latency and energy consumption that originate from its …
insufficient owing to its high latency and energy consumption that originate from its …
A Highly Reliable Molybdenum Disulfide‐Based Synaptic Memristor Using a Copper Migration‐Controlled Structure
Memristors are drawing attention as neuromorphic hardware components because of their
non‐volatility and analog programmability. In particular, electrochemical metallization (ECM) …
non‐volatility and analog programmability. In particular, electrochemical metallization (ECM) …
Unravelling the Data Retention Mechanisms under Thermal Stress on 2D Memristors
Memristors based on two-dimensional (2D) materials are a rapidly growing research area
due to their potential in energy-efficient in-memory processing and neuromorphic …
due to their potential in energy-efficient in-memory processing and neuromorphic …
A compact model for interface-type self-rectifying resistive memory with experiment verification
Resistive random access memory (RRAM), a new non-volatile memory, enables hardware
accelerators based on in-memory computing with improved throughput and energy …
accelerators based on in-memory computing with improved throughput and energy …
Electrothermal analyses in Cu/ZrO2/Pt CBRAM memory using a dual-phase-lag model
E Jemii, M Belkhiria, F Aouaini, F Echouchene… - Journal of …, 2022 - Springer
We have investigated the electrothermal behavior in Cu/ZrO2/Pt conductive bridge random
access memory (CBRAM) memory based on the dual-phase-lag thermal model. We have …
access memory (CBRAM) memory based on the dual-phase-lag thermal model. We have …
Water-based resistive switches for neuromorphic long-range connections
The brain's small-world network utilizes its short-range and long-range synaptic connections
to process information in a complex and energy-efficient manner. To emulate the former …
to process information in a complex and energy-efficient manner. To emulate the former …
Simulating the filament morphology in electrochemical metallization cells
Electrochemical metallization (ECM) cells are based on the principle of voltage controlled
formation or dissolution of a nanometer-thin metallic conductive filament (CF) between two …
formation or dissolution of a nanometer-thin metallic conductive filament (CF) between two …
Variability-aware modelling of electrochemical metallization memory cells
Resistively switching electrochemical metallization memory (ECM) cells are gaining huge
interest, as they are seen as promising candidates and basic building blocks of future …
interest, as they are seen as promising candidates and basic building blocks of future …