[HTML][HTML] Reliability of analog resistive switching memory for neuromorphic computing

M Zhao, B Gao, J Tang, H Qian, H Wu - Applied Physics Reviews, 2020 - pubs.aip.org
As artificial intelligence calls for novel energy-efficient hardware, neuromorphic computing
systems based on analog resistive switching memory (RSM) devices have drawn great …

Materials for high-temperature digital electronics

DK Pradhan, DC Moore, AM Francis… - Nature Reviews …, 2024 - nature.com
Silicon microelectronics, consisting of complementary metal–oxide–semiconductor
technology, have changed nearly all aspects of human life from communication to …

A review on device requirements of resistive random access memory (RRAM)-based neuromorphic computing

JH Yoon, YW Song, W Ham, JM Park, JY Kwon - APL Materials, 2023 - pubs.aip.org
With the arrival of the era of big data, the conventional von Neumann architecture is now
insufficient owing to its high latency and energy consumption that originate from its …

A Highly Reliable Molybdenum Disulfide‐Based Synaptic Memristor Using a Copper Migration‐Controlled Structure

W Ahn, HB Jeong, J Oh, W Hong, JH Cha, HY Jeong… - small, 2023 - Wiley Online Library
Memristors are drawing attention as neuromorphic hardware components because of their
non‐volatility and analog programmability. In particular, electrochemical metallization (ECM) …

Unravelling the Data Retention Mechanisms under Thermal Stress on 2D Memristors

S Aldana, H Zhang - ACS omega, 2023 - ACS Publications
Memristors based on two-dimensional (2D) materials are a rapidly growing research area
due to their potential in energy-efficient in-memory processing and neuromorphic …

A compact model for interface-type self-rectifying resistive memory with experiment verification

JW Kim, JS Beom, HS Lee, NS Kim - IEEE Access, 2024 - ieeexplore.ieee.org
Resistive random access memory (RRAM), a new non-volatile memory, enables hardware
accelerators based on in-memory computing with improved throughput and energy …

Electrothermal analyses in Cu/ZrO2/Pt CBRAM memory using a dual-phase-lag model

E Jemii, M Belkhiria, F Aouaini, F Echouchene… - Journal of …, 2022 - Springer
We have investigated the electrothermal behavior in Cu/ZrO2/Pt conductive bridge random
access memory (CBRAM) memory based on the dual-phase-lag thermal model. We have …

Water-based resistive switches for neuromorphic long-range connections

A Ananthakrishnan, X Du… - Journal of Physics D …, 2021 - iopscience.iop.org
The brain's small-world network utilizes its short-range and long-range synaptic connections
to process information in a complex and energy-efficient manner. To emulate the former …

Simulating the filament morphology in electrochemical metallization cells

M Buttberg, I Valov, S Menzel - Neuromorphic Computing and …, 2023 - iopscience.iop.org
Electrochemical metallization (ECM) cells are based on the principle of voltage controlled
formation or dissolution of a nanometer-thin metallic conductive filament (CF) between two …

Variability-aware modelling of electrochemical metallization memory cells

RW Ahmad, R Waser, F Maudet, O Toprak… - Neuromorphic …, 2024 - iopscience.iop.org
Resistively switching electrochemical metallization memory (ECM) cells are gaining huge
interest, as they are seen as promising candidates and basic building blocks of future …