Since the first report of ferroelectricity in nanoscale HfO2-based thin films in 2011, this silicon-
compatible binary oxide has quickly garnered intense interest in academia and industry, and …

HfO 2-based thin films have raised considerable interest in ferroelectric memory devices due
to their thickness scalability and process compatibility with CMOS. Stress exhibits a …

HfO 2-based ferroelectric thin films are promising for their application in ferroelectric devices.
Predicting the ultimate magnitude of polarization and understanding its switching …

Ferroelectrics and ionic conductors are important functional materials, each supporting a
plethora of applications in information and energy technology. The underlying physics …

The multicomponent oxide solid solution is a versatile platform to tune the delicate balance
between competing spin, charge, orbital, and lattice degrees of freedom for materials design …

Based on the first principles calculation, the mechanisms of polarization switching behavior
in ferroelectric Zr-doped HfO 2 are investigated. Seven switching pathways, divided into two …

Epitaxial orthorhombic phase La doped HfO 2 films are promising for achieving robust
ferroelectric polarization without wake-up effect. However, lowering the coercive field is …

The polarization switching mechanism in ferroelectric ZrO2 involves the nucleation and
subsequent migration of nonpolar domain boundaries; however, the fundamental …

As a technically significant dielectric, the physical understanding of ferroelectric hafnia is still
not satisfactory. This is partly due to the limited number of sample materials in the fluorite …

The discovery of ferroelectric phases in HfO2 offers insights into ferroelectricity. Its unique
fluorite structure and complex polarization switching pathways exhibit distinct characteristics …