Effective strain relaxation of GeSn single crystal with Sn content of 16.5% on Ge grown by high-temperature sputtering
G Lin, K Qian, H Ding, J Qian, J Xu, J Wang, S Ke… - Applied Surface …, 2023 - Elsevier
In this work, epitaxy of GeSn with high-Sn content of 16.5% on Ge substrate by sputtering at
a relative high temperature of 259° C is reported. The strain relaxation in constant-Sn …
a relative high temperature of 259° C is reported. The strain relaxation in constant-Sn …
[HTML][HTML] Defects in Ge and GeSn and their impact on optoelectronic properties
GeSn has emerged as a promising semiconductor with optoelectronic functionality in the
mid-infrared, with the potential of replacing expensive III–V technology for monolithic on-chip …
mid-infrared, with the potential of replacing expensive III–V technology for monolithic on-chip …
Electrical and optical properties improvement of GeSn layers formed at high temperature under well-controlled Sn migration
Electrical and optical properties of GeSn layers formed at various growth conditions under
changing deposition temperature (T d) and deposition speed (vd) were systematically …
changing deposition temperature (T d) and deposition speed (vd) were systematically …
Ge1− xSnx layers with x∼ 0.25 on InP (001) substrate grown by low-temperature molecular beam epitaxy reaching 70° C and in-situ Sb do**
S Shibayama, K Takagi, M Sakashita… - Materials Science in …, 2024 - Elsevier
Ge 1− x Sn x with x∼ 25%, group-IV alloy semiconductor, is highly attracted to mid-infrared
(MIR) photodetector applications because of its narrow bandgap with∼ 0.25 eV, the …
(MIR) photodetector applications because of its narrow bandgap with∼ 0.25 eV, the …
Germanium-tin alloys: applications for optoelectronics in mid-infrared spectra
We summarize our work of the optoelectronic devices based on Germanium-tin (GeSn)
alloys assisted with the Si3N4 liner stressor in mid-infrared (MIR) domains. The device …
alloys assisted with the Si3N4 liner stressor in mid-infrared (MIR) domains. The device …
Theoretical analysis of performance enhancement in GeSn/SiGeSn light-emitting diode enabled by Si3N4 liner stressor technique
We comprehensively investigate the energy band diagrams, carrier distribution,
spontaneous emission rate r_sp, and the internal quantum efficiency η_IQE in the lattice …
spontaneous emission rate r_sp, and the internal quantum efficiency η_IQE in the lattice …
Lattice-matched growth of high-Sn-content (x∼ 0.1) Si1− x Sn x layers on Si1− y Ge y buffers using molecular beam epitaxy
Abstract Silicon tin (Si 1− x Sn x) layers with an Sn content of 11%, which is almost 100 times
the solid solubility limit, have been successfully grown on lattice-matched Si 1− y Ge y …
the solid solubility limit, have been successfully grown on lattice-matched Si 1− y Ge y …
Group IV photonics using (Si) GeSn technology toward mid-IR applications
The group IV-based optoelectronic devices are highly desirable for full integration of Si
photonics. In this chapter, a recently developed technology using a novel group IV material …
photonics. In this chapter, a recently developed technology using a novel group IV material …
Selective growth of fully relaxed GeSn nano-islands by nanoheteroepitaxy on patterned Si (001)
In this letter, we explore in detail the potential of nanoheteroepitaxy to controllably fabricate
high quality GeSn nano-structures and to further improve the crystallinity of GeSn alloys …
high quality GeSn nano-structures and to further improve the crystallinity of GeSn alloys …
Theoretical Investigation of Tensile-Strained GeSn/SiGeSn Multiple Quantum Well Laser Wrapped in Si 3N4 Liner Stressor
A tensile-strained GeSn/SiGeSn multiple quantum well (MQW) laser wrapped in Si 3 N 4
liner stressor is designed and characterized theoretically. A biaxial tensile strain is …
liner stressor is designed and characterized theoretically. A biaxial tensile strain is …