The valence‐band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions
were measured by means of x‐ray photoemission spectroscopy. A significant forward …

We present structural and electronic data which indicate that the dominant defects in GaAs
grown at low temperatures LT GaAs by molecular beam epitaxy MBE are As antisites AsGa) …

Improvements in wide-band-gap III–V nitride material quality have increased interest in
heterojunction device applications based on GaN, AlN, and their alloys. 1–3 Accurate …

We describe a low-noise scanning Hall probe microscope having unprecedented magnetic
field sensitivity (2.910 8 T/Hz at 77 K, high spatial resolution, 0.85 m, and operating in real …

The atomic force microscope is used to measure dielectric polarization forces on surfaces
induced by a charged tip. On insulators, the major contribution to the surface polarizability at …

Low-power and electrically controlled optical sources are vital for next generation optical
interconnect systems to meet strict energy demands. Current optical transmitters consisting …

We demonstrate the use of a scanned probe microscope (SPM) at 4 Kelvin to study electron
transport through a ballistic point contact in the two‐dimensional electron gas inside a …

A cantilever with an integrated ZnO piezoelectric actuator in feedback with a piezoresistive
sensor is utilized in an atomic force microscope (AFM) to achieve a new high speed imaging …

An introduction is given to the principles of integrated optics and optical guided-wave
devices. The characteristics of dielectric waveguides are summarized and methods for their …

Resistive heating of an atomic force microscope tip was used to perform thermally induced
surface modifications. Heating was achieved by dissipating power in the legs of an …