[PDF][PDF] Synthesis, growth mechanism, and applications of zinc oxide nanomaterials

S Ji, C Ye - Journal of materials science & technology, 2008 - researchgate.net
This article reviews recent progresses in growth mechanism, synthesis, and applications of
zinc oxide nanomaterials (mainly focusing on one-dimensional (1D) nanomaterials). In the …

Diameter-dependent electromechanical properties of GaN nanowires

CY Nam, P Jaroenapibal, D Tham, DE Luzzi, S Evoy… - Nano …, 2006 - ACS Publications
The diameter-dependent Young's modulus, E, and quality factor, Q, of GaN nanowires were
measured using electromechanical resonance analysis in a transmission electron …

Tunable electronic transport characteristics of surface-architecture-controlled ZnO nanowire field effect transistors

WK Hong, JI Sohn, DK Hwang, SS Kwon, G Jo… - Nano Letters, 2008 - ACS Publications
Surface-architecture-controlled ZnO nanowires were grown using a vapor transport method
on various ZnO buffer film coated c-plane sapphire substrates with or without Au catalysts …

Zinc oxide nanostructures: morphology derivation and evolution

C Ye, X Fang, Y Hao, X Teng… - The Journal of Physical …, 2005 - ACS Publications
Zinc oxide nanostructures of various types, including nanobelts, nanoplatelets, nanowires,
and nanorods, have been synthesized via well-developed routes by many research groups …

Twin Defect Derived Growth of Atomically Thin MoS2 Dendrites

J Wang, X Cai, R Shi, Z Wu, W Wang, G Long, Y Tang… - ACS …, 2018 - ACS Publications
Morphology management for tailoring the properties of monolayer transition-metal
dichalcogenides (TMDCs), that is, molybdenum disulfide (MoS2), has attracted great interest …

Mechanism for spontaneous growth of GaN nanowires with molecular beam epitaxy

KA Bertness, A Roshko, LM Mansfield, TE Harvey… - Journal of Crystal …, 2008 - Elsevier
Although most semiconductor nanowires are grown via the vapor–liquid–solid mechanism,
we present evidence that GaN nanowires form because of thermodynamically driven …

Spontaneously grown GaN and AlGaN nanowires

KA Bertness, A Roshko, NA Sanford, JM Barker… - Journal of Crystal …, 2006 - Elsevier
We have identified crystal growth conditions in gas-source molecular beam epitaxy (MBE)
that lead to spontaneous formation of GaN nanowires with high aspect ratio on Si (111) …

Polar-surface-dominated zigzag GaN nanowires with alternate H2 and O2 evolution sites for photocatalytic overall water splitting

H Pang, W Zhou, H Hu, L Liu, J Ye, D Wang - Applied Catalysis A: General, 2023 - Elsevier
Photocatalytic overall water splitting is an ideal green technology to produce the clean and
renewable hydrogen energy. Herein, high crystalline zigzag GaN nanowires (NWs) are …

Disorder effects in focused-ion-beam-deposited Pt contacts on GaN nanowires

CY Nam, D Tham, JE Fischer - Nano letters, 2005 - ACS Publications
The current− bias (I− V) characteristics at various temperatures, T, of focused-ion-beam (FIB)-
deposited Pt contacts on GaN nanowires evolves from low-resistance ohmic (linear I− V) to …

Defects in GaN nanowires

D Tham, CY Nam, JE Fischer - Advanced Functional Materials, 2006 - Wiley Online Library
High‐resolution transmission electron microscopy (HRTEM) and cross‐sectional
transmission electron microscopy (XTEM) are used to characterize common defects in …