[PDF][PDF] Synthesis, growth mechanism, and applications of zinc oxide nanomaterials
S Ji, C Ye - Journal of materials science & technology, 2008 - researchgate.net
This article reviews recent progresses in growth mechanism, synthesis, and applications of
zinc oxide nanomaterials (mainly focusing on one-dimensional (1D) nanomaterials). In the …
zinc oxide nanomaterials (mainly focusing on one-dimensional (1D) nanomaterials). In the …
Diameter-dependent electromechanical properties of GaN nanowires
The diameter-dependent Young's modulus, E, and quality factor, Q, of GaN nanowires were
measured using electromechanical resonance analysis in a transmission electron …
measured using electromechanical resonance analysis in a transmission electron …
Tunable electronic transport characteristics of surface-architecture-controlled ZnO nanowire field effect transistors
Surface-architecture-controlled ZnO nanowires were grown using a vapor transport method
on various ZnO buffer film coated c-plane sapphire substrates with or without Au catalysts …
on various ZnO buffer film coated c-plane sapphire substrates with or without Au catalysts …
Zinc oxide nanostructures: morphology derivation and evolution
C Ye, X Fang, Y Hao, X Teng… - The Journal of Physical …, 2005 - ACS Publications
Zinc oxide nanostructures of various types, including nanobelts, nanoplatelets, nanowires,
and nanorods, have been synthesized via well-developed routes by many research groups …
and nanorods, have been synthesized via well-developed routes by many research groups …
Twin Defect Derived Growth of Atomically Thin MoS2 Dendrites
Morphology management for tailoring the properties of monolayer transition-metal
dichalcogenides (TMDCs), that is, molybdenum disulfide (MoS2), has attracted great interest …
dichalcogenides (TMDCs), that is, molybdenum disulfide (MoS2), has attracted great interest …
Mechanism for spontaneous growth of GaN nanowires with molecular beam epitaxy
Although most semiconductor nanowires are grown via the vapor–liquid–solid mechanism,
we present evidence that GaN nanowires form because of thermodynamically driven …
we present evidence that GaN nanowires form because of thermodynamically driven …
Spontaneously grown GaN and AlGaN nanowires
We have identified crystal growth conditions in gas-source molecular beam epitaxy (MBE)
that lead to spontaneous formation of GaN nanowires with high aspect ratio on Si (111) …
that lead to spontaneous formation of GaN nanowires with high aspect ratio on Si (111) …
Polar-surface-dominated zigzag GaN nanowires with alternate H2 and O2 evolution sites for photocatalytic overall water splitting
Photocatalytic overall water splitting is an ideal green technology to produce the clean and
renewable hydrogen energy. Herein, high crystalline zigzag GaN nanowires (NWs) are …
renewable hydrogen energy. Herein, high crystalline zigzag GaN nanowires (NWs) are …
Disorder effects in focused-ion-beam-deposited Pt contacts on GaN nanowires
CY Nam, D Tham, JE Fischer - Nano letters, 2005 - ACS Publications
The current− bias (I− V) characteristics at various temperatures, T, of focused-ion-beam (FIB)-
deposited Pt contacts on GaN nanowires evolves from low-resistance ohmic (linear I− V) to …
deposited Pt contacts on GaN nanowires evolves from low-resistance ohmic (linear I− V) to …
Defects in GaN nanowires
D Tham, CY Nam, JE Fischer - Advanced Functional Materials, 2006 - Wiley Online Library
High‐resolution transmission electron microscopy (HRTEM) and cross‐sectional
transmission electron microscopy (XTEM) are used to characterize common defects in …
transmission electron microscopy (XTEM) are used to characterize common defects in …