Gallium arsenide and other compound semiconductors on silicon
The physics of the growth mechanisms, characterization of epitaxial structures and device
properties of GaAs and other compound semiconductors on Si are reviewed in this paper …
properties of GaAs and other compound semiconductors on Si are reviewed in this paper …
Fluidic self-assembly for the integration of GaAs light-emitting diodes on Si substrates
HJJ Yeh, JS Smith - IEEE Photonics technology letters, 1994 - ieeexplore.ieee.org
The integration of GaAs optoelectronic devices on Si VLSI is important for many high-
bandwidth communication applications. In this paper we describe a novel technique for the …
bandwidth communication applications. In this paper we describe a novel technique for the …
Evolution of the MOS transistor-from conception to VLSI
S Chih-Tang - Proceedings of the IEEE, 1988 - ieeexplore.ieee.org
Historical developments of the metal-oxide-semiconductor field-effect transistor (MOSFET)
during the last 60 years are reviewed, from the 1928 patent disclosures of the field-effect …
during the last 60 years are reviewed, from the 1928 patent disclosures of the field-effect …
Material properties of high‐quality GaAs epitaxial layers grown on Si substrates
We report an investigation of the materials properties of GaAs on Si epitaxial layers. By
using properly oriented substrates, we have found that a substantial reduction in the density …
using properly oriented substrates, we have found that a substantial reduction in the density …
[書籍][B] The MOCVD Challenge: Volume 2: A Survey of GaInAsP-GaAs for photonic and electronic device applications
M Razeghi - 1995 - taylorfrancis.com
The MOCVD Challenge: Volume 2, A Survey of GaInAsP-GaAs for Photonic and Electronic
Device Applications focuses on GaAs systems and devices grown by MOCVD, specifically …
Device Applications focuses on GaAs systems and devices grown by MOCVD, specifically …
Dislocation reduction in epitaxial GaAs on Si (100)
We have studied the nucleation and propagation of threading dislocations in GaAs on Si
epitaxial layers, and have found several techniques which are effective in reducing their …
epitaxial layers, and have found several techniques which are effective in reducing their …
Modulation-doped gaas/(al, ga) as heterojunction field-effect transistors: Modfets
TJ Drummond, WT Masselink… - Proceedings of the …, 1986 - ieeexplore.ieee.org
Recently developed modulation-doped field-effect transistors (MODFETs) now hold the
record for high-speed logic. In this device structure only the larger bandgap (Al, Ga) As layer …
record for high-speed logic. In this device structure only the larger bandgap (Al, Ga) As layer …
Properties of GaAs on Si grown by molecular beam epitaxy
For several years, there has been a great deal of activity in the growth of GaAs and other
compounds on Si substrates for several reasons. Among them are the high quality, low cost …
compounds on Si substrates for several reasons. Among them are the high quality, low cost …
GaAs bipolar transistors grown on (100) Si substrates by molecular beam epitaxy
R Fischer, N Chand, W Kopp, H Morkoc… - Applied physics …, 1985 - pubs.aip.org
We have investigated the properties of GaAs homojunction bipolar transistors grown on
(100) oriented Si substrates by molecular beam epitaxy. In a structure with a base thickness …
(100) oriented Si substrates by molecular beam epitaxy. In a structure with a base thickness …