Quantum dot array devices with metal source and drain
JH Zhang - US Patent App. 13/931,096, 2014 - Google Patents
0004 2. Description of the Related Art 0005. As technology nodes for integrated circuits
scale below 10 nm, maintaining precise control of various electrical characteristics in bulk …
scale below 10 nm, maintaining precise control of various electrical characteristics in bulk …
Threshold adjustment for quantum dot array devices with metal source and drain
JH Zhang - US Patent 9,748,356, 2017 - Google Patents
Assistant Examiner—Dmitriy Yemelyanov (74) Attorney, Agent, or Firm—Seed IP Law Group
LLP (57) ABSTRACT Incorporation of metallic quantum dots (eg, silver bromide (AgBr) films) …
LLP (57) ABSTRACT Incorporation of metallic quantum dots (eg, silver bromide (AgBr) films) …
Strained channel transistor structure and method
JP Liu, AKH See, MS Zhou, LC Hsia - US Patent 8,754,447, 2014 - Google Patents
A transistor device structure comprising: a substrate portion formed from a first material; and
a source region, a drain region and a channel region formed in said substrate, the source …
a source region, a drain region and a channel region formed in said substrate, the source …
Atomic layer deposition of selected molecular clusters
JH Zhang - US Patent 10,002,938, 2018 - Google Patents
Energy bands of a thin film containing molecular clusters are tuned by controlling the size
and the charge of the clusters during thin film deposition. Using atomic layer deposition, an …
and the charge of the clusters during thin film deposition. Using atomic layer deposition, an …
Threshold adjustment for quantum dot array devices with metal source and drain
JH Zhang - US Patent 10,038,072, 2018 - Google Patents
Incorporation of metallic quantum dots (eg, silver bromide (AgBr) films) into the source and
drain regions of a MOSFET can assist in controlling the transistor performance by tuning the …
drain regions of a MOSFET can assist in controlling the transistor performance by tuning the …
Transistors incorporating metal quantum dots into doped source and drain regions
JH Zhang - US Patent 10,199,505, 2019 - Google Patents
Metal quantum dots are incorporated into doped source and drain regions of a MOSFET
array to assist in controlling transistor performance by altering the energy gap of the …
array to assist in controlling transistor performance by altering the energy gap of the …
Transistors incorporating metal quantum dots into doped source and drain regions
JH Zhang - US Patent 9,711,649, 2017 - Google Patents
Metal quantum dots are incorporated into doped source and drain regions of a MOSFET
array to assist in controlling transistor performance by altering the energy gap of the …
array to assist in controlling transistor performance by altering the energy gap of the …
Transistors incorporating metal quantum dots into doped source and drain regions
JH Zhang - US Patent 9,601,630, 2017 - Google Patents
Metal quantum dots are incorporated into doped source and drain regions of a MOSFET
array to assist in controlling transistor performance by altering the energy gap of the …
array to assist in controlling transistor performance by altering the energy gap of the …
Atomic layer deposition of selected molecular clusters
JH Zhang - US Patent 10,892,344, 2021 - Google Patents
Energy bands of a thin film containing molecular clusters are tuned by controlling the size
and the charge of the clusters during thin film deposition. Using atomic layer deposition, an …
and the charge of the clusters during thin film deposition. Using atomic layer deposition, an …
Atomic layer deposition of selected molecular clusters
JH Zhang - US Patent 11,695,053, 2023 - Google Patents
Energy bands of a thin film containing molecular clusters are tuned by controlling the size
and the charge of the clusters during thin film deposition. Using atomic layer deposition, an …
and the charge of the clusters during thin film deposition. Using atomic layer deposition, an …