Wet etching of GaN, AlN, and SiC: a review
D Zhuang, JH Edgar - Materials Science and Engineering: R: Reports, 2005 - Elsevier
The wet etching of GaN, AlN, and SiC is reviewed including conventional etching in
aqueous solutions, electrochemical etching in electrolytes and defect-selective chemical …
aqueous solutions, electrochemical etching in electrolytes and defect-selective chemical …
Gallium nitride as an electromechanical material
Gallium nitride (GaN) is a wide bandgap semiconductor material and is the most popular
material after silicon in the semiconductor industry. The prime movers behind this trend are …
material after silicon in the semiconductor industry. The prime movers behind this trend are …
[BOOK][B] Handbook of nitride semiconductors and devices, Materials Properties, Physics and Growth
H Morkoį - 2009 - books.google.com
The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …
of nitride semiconductors with an extraordinary clarity and depth. They present all the …
[HTML][HTML] Experimental characterization of impact ionization coefficients for electrons and holes in GaN grown on bulk GaN substrates
Epitaxial pin structures grown on native GaN substrates have been fabricated and used to
extract the impact ionization coefficients in GaN. The photomultiplication method has been …
extract the impact ionization coefficients in GaN. The photomultiplication method has been …
Au-TiB x -n-6H-SiC Schottky barrier diodes: Specific features of charge transport in rectifying and nonrectifying contacts
OA Ageev, AE Belyaev, NS Boltovets, VN Ivanov… - Semiconductors, 2009 - Springer
Mechanism of charge transport in a diode of a silicon carbide's Schottky barrier formed by a
quasi-amorphous interstitial phase TiB x on the surface of n-6 H-SiC (0001) single crystals …
quasi-amorphous interstitial phase TiB x on the surface of n-6 H-SiC (0001) single crystals …
Development of semiconducting ScN
Since the 1960s advances in electronic and optoelectronic device technologies have been
primarily orchestrated by III-V semiconductors, which have led to an age of consumer …
primarily orchestrated by III-V semiconductors, which have led to an age of consumer …
Gallium nitride crystals and wafers and method of making
MP D'evelyn, DS Park, SF Leboeuf… - US Patent …, 2006 - Google Patents
(57) ABSTRACT A GaN crystal having up to about 5 mole percent of at least one of
aluminum, indium, and combinations thereof. The GaN crystal has at least one grain having …
aluminum, indium, and combinations thereof. The GaN crystal has at least one grain having …
Mechanisms of current flow in metal-semiconductor ohmic contacts
TV Blank, YA Gol'Dberg - Semiconductors, 2007 - Springer
Published data on the properties of metal-semiconductor ohmic contacts and mechanisms of
current flow in these contacts (thermionic emission, field emission, thermal-field emission …
current flow in these contacts (thermionic emission, field emission, thermal-field emission …
Correlation of device performance and defects in AlGaN/GaN high-electron mobility transistors
AP Zhang, LB Rowland, EB Kaminsky, V Tilak… - Journal of electronic …, 2003 - Springer
Device performance and defects in AlGaN/GaN high-electron mobility transistors (HEMTs)
have been correlated. Surface depressions and threading dislocations, revealed by optical …
have been correlated. Surface depressions and threading dislocations, revealed by optical …
Microstructure and origin of dislocation etch pits in GaN epilayers grown by metal organic chemical vapor deposition
L Lu, ZY Gao, B Shen, FJ Xu, S Huang… - Journal of Applied …, 2008 - pubs.aip.org
Morphology and microstructure of dislocation etch pits in GaN epilayers etched by molten
KOH have been investigated by atomic force microscopy, scanning electron microscopy …
KOH have been investigated by atomic force microscopy, scanning electron microscopy …