Silicon has long been established as the material of choice for the microelectronics industry.
This is not yet true in photonics, where the limited degrees of freedom in material design …

Group IV lasers are expected to revolutionize chip-to-chip optical communications in terms
of cost, scalability, yield, and compatibility to the existing infrastructure of silicon industries …

A nanoscale on-chip light source with high intensity is desired for various applications in
integrated photonics systems. However, it is challenging to realize such an emitter using …

Efficient coupling to integrated high-quality-factor cavities is crucial for the employment of
germanium quantum dot (QD) emitters in future monolithic silicon-based optoelectronic …

Germanium (Ge) is a group-IV indirect band gap semiconductor, and therefore bulk Ge
cannot emit light efficiently. However, the direct band gap energy is close to the indirect one …

The missing piece in the jigsaw of silicon photonics is a light source that can be easily
incorporated into the standard silicon fabrication process. Here, silicon laser‐like emission is …

We present a design for a two-dimensional photonic crystal slab cavity in which the electric
field localization is due to an extra hole in the lattice, as opposed to the more standard …

This article presents the flip-chip bonding of vertical-cavity surface-emitting lasers (VCSELs)
to silicon grating couplers (GCs) via SU8 prisms. The SU8 prisms are defined on top of the …

We demonstrate a small foot print (600 nm wide) 1D silicon photonic crystal electro-optic
modulator operating with only a 50 mV swing voltage and 0.1 fJ/bit switching energy at GHz …

We report on the realization of high-Q/V photonic crystal cavities in thin silicon membranes,
with resonances around 1.55 μm wavelength. The cavity designs are based on a recently …