Gallium oxide (Ga 2 O 3) is emerging as a viable candidate for certain classes of power
electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond …

Solar-blind photodetectors are of great interest to a wide range of industrial, civil,
environmental, and biological applications. As one of the emerging ultrawide-bandgap …

Deep-ultraviolet (DUV) phototransistors have shown great potential applications in UV
imaging, artificial intelligence, and wearable optoelectronics. Among a large number of wide …

Recently, there is a growing interest in Gallium Oxide (Ga 2 O 3) as a promising
semiconductor material for intended applications in RF, power electronics, and sensors with …

As a promising ultra-wide bandgap semiconductor, the β-phase of Ga 2 O 3 has attracted
more and more interest in the field of power electronics due to its ultra-wide bandgap (4.8 …

Precise control of the heteroepitaxy on a low-cost foreign substrate is often the key to drive
the success of fabricating semiconductor devices in scale when a large low-cost native …

Abstract Beta phase Gallium Oxide (BGO) is an emerging ultra-wide bandgap
semiconductor with disruptive potential for ultra-low power loss, high-efficiency power …

We have achieved significantly improved device performance in solar-blind deep-ultraviolet
photodetectors fabricated from β-Ga2O3 thin films grown via metal–organic chemical vapor …

For a practical photodetector, fast switching speed and high on-off ratio are essential, and
more importantly, the integration capability of the device finally determines its application …

Graphene (Gr) has been widely used as a transparent electrode material for photodetectors
because of its high conductivity and high transmittance in recent years. However, the current …